Abstract: Foreign matter formed over (or adhered to) a surface of a lead is reliably removed. A laser beam is applied to a residual resin (sealing body) which is formed in (or adhered to) a region surrounded by a sealing body (a first sealing body), a lead exposed (projected) from the sealing body, and a dam bar. The foreign matter formed over (or adhered to) the surface of the lead can be reliably removed by washing the surface of the lead after the removal of the residual resin. Thus, in a subsequent plating step, the reliability (wettability, adhesion with the lead) of a plating film to be formed over the surface of the lead can be improved.

Abstract: A method of manufacturing a semiconductor device involves the steps of: forming a plurality of product formation areas each having a circuit and a plurality of first electrode pads over a main surface of a semiconductor wafer; arranging a plurality of second electrode pads with larger pitches than the first electrode pads in each of the product formation areas; segmenting the semiconductor wafer to separate the plural product formation areas and provide a plurality of semiconductor devices each having the circuit, the plural first electrode pads and the plural second electrode pads on a first surface; and cleaning foreign matter off the first surface of the semiconductor device after the step of segmenting the semiconductor devices.

Abstract: Foreign matter formed over (or adhered to) a surface of a lead is reliably removed. A laser beam is applied to a residual resin (sealing body) which is formed in (or adhered to) a region surrounded by a sealing body (a first sealing body), a lead exposed (projected) from the sealing body, and a dam bar. The foreign matter formed over (or adhered to) the surface of the lead can be reliably removed by washing the surface of the lead after the removal of the residual resin. Thus, in a subsequent plating step, the reliability (wettability, adhesion with the lead) of a plating film to be formed over the surface of the lead can be improved.

Abstract: A method of manufacturing a semiconductor device involves the steps of: forming a plurality of product formation areas each having a circuit and a plurality of first electrode pads over a main surface of a semiconductor wafer; arranging a plurality of second electrode pads with larger pitches than the first electrode pads in each of the product formation areas; segmenting the semiconductor wafer to separate the plural product formation areas and provide a plurality of semiconductor devices each having the circuit, the plural first electrode pads and the plural second electrode pads on a first surface; and cleaning foreign matter off the first surface of the semiconductor device after the step of segmenting the semiconductor devices.

Abstract: A method of manufacturing a semiconductor device involves the steps of: forming a plurality of product formation areas each having a circuit and a plurality of first electrode pads over a main surface of a semiconductor wafer; arranging a plurality of second electrode pads with larger pitches than the first electrode pads in each of the product formation areas; segmenting the semiconductor wafer to separate the plural product formation areas and provide a plurality of semiconductor devices each having the circuit, the plural first electrode pads and the plural second electrode pads on a first surface; and cleaning foreign matter off the first surface of the semiconductor device after the step of segmenting the semiconductor devices.

Abstract: A method for manufacturing a multi media card comprises the steps of: providing a substrate, mounting a first flash memory chip and a controller chip for controlling the flash memory chip over a front surface of the substrate, molding the first flash memory chip and the controller chip by a resin, providing a case having a main surface and a back surface, wherein the back surface of the case has a first recess and a second recess, and, covering the resin and the front surface of the substrate by the case. The depth of the first recess is deeper than the depth of the second recess. The resin is fitted in the first recess. An edge portion of the substrate is fitted in the second recess. The substrate warps so that a central portion of the substrate projects in a direction away from the case.

Abstract: There is a need to provide a large capacity memory card for a portable communication device. A memory card 1 includes: a wiring board 2 mainly composed of a glass epoxy resin; multiple semiconductor chips (3C and 3F) mounted on a main surface of the memory card 1; and a mold resin 4 for encapsulating the wiring board 2 and the semiconductor chips (3C and 3F). The mold resin 4 is made of a thermosetting epoxy resin containing quartz filler. A back surface of the wiring board 2 is not covered with the mold resin 4 and is exposed to a back surface of the memory card 1. The back surface of the wiring board 2 is used to form multiple external connection terminals 7 electrically connected to the semiconductor chips (3C and 3F) . When the memory card 1 is attached to a card slot of a mobile phone, the external connection terminals 7 contact with a connector terminal contained in the card slot. This makes it possible to exchange signals between the memory card 1 and the mobile phone or to supply the power.

Abstract: A memory card wherein a substrate is affixed to a cap is formed without the projection of substrate edges from a back surface of the cap. The memory card includes a substrate having a sealing member bonded to a recess in the cap. By utilizing a difference in thermal expansion coefficient between the sealing member and the substrate, the substrate is warped so that its central portion projects away from the cap. The shallow recess is deeper than the sum of the thickness of the substrate and the thickness of an adhesive for bonding the substrate to the bottom of the shallow recess, whereby peripheral edges of the substrate retract into the shallow recess without projecting from the back surface of the cap. The cap is shaped as a card several millimeters thick. A memory chip and control chip are incorporated in the sealing member.

Abstract: A memory card wherein a substrate is affixed to a cap is formed without the projection of substrate edges from a back surface of the cap. The memory card includes a substrate having a sealing member bonded to a recess in the cap. By utilizing a difference in thermal expansion coefficient between the sealing member and the substrate, the substrate is warped so that its central portion projects away from the cap. The shallow recess is deeper than the sum of the thickness of the substrate and the thickness of an adhesive for bonding the substrate to the bottom of the shallow recess, whereby peripheral edges of the substrate retract into the shallow recess without projecting from the back surface of the cap. The cap is shaped as a card several millimeters thick. A memory chip and control chip are incorporated in the sealing member.

Abstract: A memory card wherein a substrate is affixed to a cap is formed without the projection of substrate edges from a back surface of the cap. The memory card includes a substrate having a sealing member bonded to a recess in the cap. By utilizing a difference in thermal expansion coefficient between the sealing member and the substrate, the substrate is warped so that its central portion projects away from the cap. The shallow recess is deeper than the sum of the thickness of the substrate and the thickness of an adhesive for bonding the substrate to the bottom of the shallow recess, whereby peripheral edges of the substrate retract into the shallow recess without projecting from the back surface of the cap. The cap is shaped as a card several millimeters thick. A memory chip and control chip are incorporated in the sealing member.

Abstract: A memory card wherein a substrate is affixed to a cap is formed without the projection of substrate edges from a back surface of the cap. The memory card includes a substrate having a sealing member bonded to a recess in the cap. By utilizing a difference in thermal expansion coefficient between the sealing member and the substrate, the substrate is warped so that its central portion projects away from the cap. The shallow recess is deeper than the sum of the thickness of the substrate and the thickness of an adhesive for bonding the substrate to the bottom of the shallow recess, whereby peripheral edges of the substrate retract into the shallow recess without projecting from the back surface of the cap. The cap is shaped as a card several millimeters thick. A memory chip and control chip are incorporated in the sealing member.

Abstract: A method of manufacturing a semiconductor device involves the steps of: forming a plurality of product formation areas each having a circuit and a plurality of first electrode pads over a main surface of a semiconductor wafer; arranging a plurality of second electrode pads with larger pitches than the first electrode pads in each of the product formation areas; segmenting the semiconductor wafer to separate the plural product formation areas and provide a plurality of semiconductor devices each having the circuit, the plural first electrode pads and the plural second electrode pads on a first surface; and cleaning foreign matter off the first surface of the semiconductor device after the step of segmenting the semiconductor devices.

Abstract: In a memory card of the structure wherein a substrate is affixed to a cap, the memory card is formed to a predetermined thickness without projection of substrate edges from a back surface of the cap.

Abstract: A method for manufacturing a semiconductor device including providing first and second semiconductor chips each having a main surface having a semiconductor element and a plurality of external terminals, and a lower surface respectively opposing the main surface. A first lead frame is provided which has a frame body which supports outer portions and inner portions extending from the outer portions, and a second lead frame is provided which has a frame body which supports outer portions and inner portions extending from the outer portions. After electrically connecting the external terminals to the inner portions of the lead frames and resin-sealing the first and second semiconductor chips so that the first and second lead frames are superimposed, the frame body of the second lead frame is removed and a first processing fluid is applied to the outer portions of the first lead frame and the second lead frame.

Abstract: A semiconductor device according to this invention, wherein two semiconductor chips are sealed by one resin body using two lead frames, includes a wide part extending in the width direction of dam bars, the width of one dam bar being narrower than the width of another dam bar, and the two lead frames are joined by welding outside the resin body after sealing them with resin.

Abstract: A semiconductor device according to this invention, wherein two semiconductor chips are sealed by one resin body using two lead frames, includes a wide part extending in the width direction of dam bars, the width of one dam bar being narrower than the width of another dam bar, and the two lead frames are joined by welding outside the resin body after sealing them with resin.

Abstract: A semiconductor device according to this invention, wherein two semiconductor chips are sealed by one resin body using two lead frames, comprises a wide part extending in the width direction of dam bars, the width of one dam bar being narrower than the width of another dam bar, and the two lead frames are joined by soldering outside the resin body after sealing them with resin.

Abstract: A semiconductor device according to this invention, wherein two semiconductor chips are sealed by one resin body using two lead frames, includes a wide part extending in the width direction of dam bars, the width of one dam bar being narrower than the width of another dam bar, and the two lead frames are joined by welding outside the resin body after sealing them with resin.

Abstract: A semiconductor device according to this invention, wherein two semiconductor chips are sealed by one resin body using two lead frames, comprises a wide part extending in the width direction of dam bars, the width of one dam bar being narrower than the width of another dam bar, and the two lead frames are joined by soldering outside the resin body after sealing them with resin.