Abstract: Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

Abstract: Provided is a vaporizable source material container having excellent corrosion resistance. The vaporizable source material container for storing and vaporizing a metal halide for thin film deposition S includes: a container main body including a container wall; a lid body provided with a carrier gas inlet and a mixed gas outlet; fastening members for fixing the container main body with the lid body; and joint members, wherein the container wall of the container main body is fabricated of copper with 99 to 99.9999% purity, aluminum with 99 to 99.9999% purity, or titanium with 99 to 99.9999% purity, and the container main body, the lid body, the fastening members and the joint members are each treated by fluorocarbon polymer coating and/or by electrolytic polishing.

Abstract: Provided is a vaporizable source material container having excellent corrosion resistance. The vaporizable source material container for storing and vaporizing a metal halide for thin film deposition S includes: a container main body including a container wall; a lid body provided with a carrier gas inlet and a mixed gas outlet; fastening members for fixing the container main body with the lid body; and joint members, wherein the container wall of the container main body is fabricated of copper with 99 to 99.9999% purity, aluminum with 99 to 99.9999% purity, or titanium with 99 to 99.9999% purity, and the container main body, the lid body, the fastening members and the joint members are each treated by fluorocarbon polymer coating and/or by electrolytic polishing.

Abstract: Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

Abstract: There is provided a raw material solution for MOCVD method having a high film forming rate, and a method for manufacturing composite oxide film containing Hf-Si using the raw material solution. There is also provided a method for manufacturing composite oxide film containing Hf-Si by using the raw material solution for MOCVD method providing an excellent adhesivity with a substrate. The raw material solution for MOCVD method of the invention includes an organic Si compound represented by the formula (R1R2N)nSiH(4-n) which is mixed in a predetermined ratio. A mixing ratio of the organic Si compound and the organic Hf compound is within the range of 0.001 to 0.5 wt % in a weight ratio (organic Hf compound/organic Si compound). The raw material solution for MOCVD method of the invention is prepared by mixing the compounds in a ratio within the above-mentioned range, dissolving the organic Hf compound in the organic Si compound, and heating this solution at a temperature of 20 to 100 ° C.

Abstract: A raw material solution for metal organic chemical vapor deposition having good film forming properties and excellent step coverage, and a composite oxide-based dielectric thin film produced by using the raw material, are provided. An improvement is made to the raw material solution for metal organic chemical vapor deposition having one or two or more organometallic compounds dissolved in an organic solvent, and the feature of the constitution lies in that the organic solvent is 1,3-dioxolane, or the organic solvent is a solvent mixture formed by mixing a first solvent consisting of 1,3-dioxolane, and a second solvent comprising one or two or more species selected from the group consisting of alcohols, alkanes, esters, aromatics, alkyl ethers and ketones, which is to be mixed with the 1,3-dioxolane.

Abstract: Provided is a novel capacitor film forming material having a high growth rate and excellent step coverage, and obtained is a hafnium-containing film having excellent characteristics as a capacitor film with a high dielectric constant and a low reactivity with Si. A capacitor film forming material comprising a hafnium oxide film provided in a semiconductor memory device, is a capacitor film forming material in which the forming material comprises the organic hafnium compound of Hf(R1R2N)4 or Hf(OR3)4-n(R4)n and the content of Nb as an inevitable compound is 1 ppm or less.

Abstract: A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

Abstract: The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 30 ppm or less. In addition, the general formula of this compound is represented by the following formula (1): M[(R1)2N](n?s)(R2)s??(1) wherein, M represents a metal atom or semimetal atom, with the metal atom being Hf, Zr, Ta, Ti, Ce, Al, V, La, Nb or Ni, and the semimetal atom being Si, R1 represents a methyl group or ethyl group, R2 represents an ethyl group, n represents the valence of M, and s represents an integer of 0 to n?1.

Abstract: A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

Abstract: The organometallic compound of the present invention is a compound that has bonds between metal atoms and nitrogen atoms or bonds between semimetal atoms and nitrogen atoms, and the content of chlorine in the compound is 200 ppm or less and the content of water is 30 ppm or less.

Abstract: The method of forming a Si-containing thin film forms a film using an organic Si-containing compound having a Si—Si bond represented by the following formula (I): 1

Abstract: The present invention provides a solution suitable for forming a composite oxide type dielectric thin film containing at least one organometallic compound dissolved in at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, and acetoacetic esters, or dissolved in a solvent mixture comprising at least one solvent selected from the group consisting of cyclic and acyclic saturated hydrocarbons, and at least one solvent selected from the group consisting of cyclic or acyclic diethers, alkyl-substituted cyclic monoethers, mono- or di-branched alkyl monoethers, alkoxy alcohols, diols, acetoacetic esters, and unsubstituted or alkyl-substituted pyridine.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2 -dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-l-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: An organic copper compound is provided that is represented by the following formula (1) in which monovalent copper is coordinated with a &bgr;-diketone compound and an unsaturated hydrocarbon compound having a silyloxy group: wherein R Is an unsaturated hydrocarbon moiety, L is the &bgr;-diketone compound, X1, X2, and X3 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or an alkoxy group having 1 to 4 carbon atoms, and X1, X2, and X3 may be the same or different from each other. The organic copper compound is barely decomposed in a stock solution before use, has a prolonged storage life, exhibits a high film deposition rate, can be effectively decomposed on a substrate, is highly volatile, and exhibits high adhesiveness to an underlayer.

Abstract: Bis(dipivaloylmethanato)diisobutoxytitanium or bis(dipivaloylmethanato)-di(2,2-dimethyl-1-propoxytitanium per se, or as used as a raw material in a MOCVD process, as is or as a solution in an organic solvent, for example, tetrahydrofuran, produces a dielectric thin film of a fine texture having a film thickness which is proportional to the deposition time and the concentration of the solution.

Abstract: Two types of high-purity Ti complexes, ?TiO(DPM: dipivaloylmethane).sub.2 !.sub.2 and cis-Ti(O-t-Bu).sub.2 (DPM).sub.2, and BST film-forming liquid compositions comprising solutions of either of the two types of high-purity Ti complexes and Ba(DPM).sub.2 and/or Sr(DPM).sub.2 in organic solvents can be used to form BST films. Crystals of the former complex are produced by adding purified water to a solution of TiCl.sub.2 (DPM).sub.2 in an organic solution, adding an alkali chemical to the solution to adjust the pH to 6.0-8.0 to thereby produce turbidity, and separating the organic layer which is then washed with water and heated to reflux. Crystals of the latter complex is produced by adding HDPM to a solution of Ti(O-t-Bu).sub.4 in an organic solvent, and heating the solution to reflux.

Abstract: A Pt film-forming composition comprises a dimethyl Pt(II) (N,N,N',N'-tetramethylethylenediamine) complex and an organic solvent. A Pt film is formed by applying this composition to a substrate and then subjecting the applied layer of the composition to a heat treatment. A Pt film pattern is obtained by applying this composition to a substrate, pattern-exposing the produced applied layer of the composition to radiation, developing the exposed layer, and then subjecting the developed layer to a heat treatment.