Abstract: Disclosed are a novel compound having a higher angiogenic effect than that of a known peptide-based angiogenic agent, and an angiogenic agent including the novel compound. The compound is represented by the following formula [1]: Cyclic(Cys-O2Oc-SVV(F/Y)GLRG-Cys)-NH2 (wherein the number of oxyethylene units, represented by O2Oc, is within the range of 2 to 6), the following formula [II]: Cyclic(O2Oc-SVV(F/Y)GLRQ)-NH2 [II] (wherein the number of oxyethylene units, represented by O2Oc, is within the range of 2 to 6), or the following formula [III]: O2Oc-SVV(F/Y)GLR-NH2 [III] (wherein the number of oxyethylene units, represented by O2Oc, is within the range of 2 to 6).

Abstract: A switching circuit includes: a drive power supply; a first transistor and a second transistor; a drive signal source; and a drive circuit. Each of the first transistor and the second transistor includes: a drain electrode and a source electrode in which a main current flows when a corresponding one of the first transistor and the second transistor is ON; a first source terminal for passing the main current; and a second source terminal. Here, the first source terminal is connected to the source electrode at an impedance lower than an impedance of the second source terminal.

Abstract: A switching circuit includes: a drive power supply; a first transistor and a second transistor; a drive signal source; and a drive circuit. Each of the first transistor and the second transistor includes: a drain electrode and a source electrode in which a main current flows when a corresponding one of the first transistor and the second transistor is ON; a first source terminal for passing the main current; and a second source terminal. Here, the first source terminal is connected to the source electrode at an impedance lower than an impedance of the second source terminal.

Abstract: A switching circuit includes: a drive power supply; a first transistor and a second transistor; a drive signal source; and a drive circuit. Each of the first transistor and the second transistor includes: a drain electrode and a source electrode in which a main current flows when a corresponding one of the first transistor and the second transistor is ON; a first source terminal for passing the main current; and a second source terminal. Here, the first source terminal is connected to the source electrode at an impedance lower than an impedance of the second source terminal.

Abstract: A switching circuit includes: a drive power supply; a first transistor and a second transistor; a drive signal source; and a drive circuit. Each of the first transistor and the second transistor includes: a drain electrode and a source electrode in which a main current flows when a corresponding one of the first transistor and the second transistor is ON; a first source terminal for passing the main current; and a second source terminal. Here, the first source terminal is connected to the source electrode at an impedance lower than an impedance of the second source terminal.

Abstract: A DC-DC converter module includes a module substrate on which switching transistors and a controller IC chip are mounted, stud terminals mounted on a surface of the module substrate, and an inductor attached to the stud terminals such that the inductor faces the module substrate. In a plan view, the switching transistors are arranged within an area where the inductor overlaps the module substrate, whereas at least a portion of the controller IC chip is arranged outside the area.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A DC-DC converter module includes a module substrate on which switching transistors and a controller IC chip are mounted, stud terminals mounted on a surface of the module substrate, and an inductor attached to the stud terminals such that the inductor faces the module substrate. In a plan view, the switching transistors are arranged within an area where the inductor overlaps the module substrate, whereas at least a portion of the controller IC chip is arranged outside the area.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact, with the IC socket of the semiconductor device. Each pair of nearest neighbors, of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: LED drivers specially directed to LED matrix driver's ghost image prevention is disclosed. The LED driver receives an external input and decodes the input to produce a time multiplex timing on turning on an LED array. The LED driver inserts a dead time to the outputs and during this time the ghost image prevention circuit discharges the output stray capacitances to a predetermined level.

Abstract: Multiple LED terminals are provided to multiple LEDs, respectively. Each of these LED terminals is connected to the anode of the corresponding LED. A booster circuit boosts an input voltage. Multiple constant current sources are provided to the multiple LEDs, respectively. One terminal of each of the constant current sources is connected to the corresponding one of the LEDs via the corresponding one of the LED terminals. Multiple switches are provided to the multiple constant current sources, respectively, each of which selectively outputs a voltage selected from the input voltage and the output voltage of the booster circuit to the corresponding constant current source. A control circuit monitors each of the voltages at the multiple LED terminals, and controls the connection state of each of the switches based upon the corresponding voltage.

Abstract: LED drivers specially directed to LED matrix driver's ghost image prevention is disclosed. The LED driver receives an external input and decodes the input to produce a time multiplex timing on turning on an LED array. The LED driver inserts a dead time to the outputs and during this time the ghost image prevention circuit discharges the output stray capacitances to a predetermined level.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A semiconductor device has pluralities of grid array terminals forming a grid array structure, e.g. a BGA structure, in which the output end of a built-in switch circuit is connected to multiple terminals of the grid array structure, thereby reducing the current that flows through each of the multiple terminals below a permissible level and minimizing the heat due to contact resistances of the multiple terminals in contact with the IC socket of the semiconductor device. Each pair of nearest neighbors of the multiple terminals is interposed by at least one further array terminal. The multiple terminals are all located at the outermost peripheral terminal positions of the grid array structure. Thus, the heat generated in the respective multiple terminals connected to the switch circuit is reduced, thereby minimizing the possibility of hazardous melting of the terminals.

Abstract: A direct-current stabilized power supply apparatus according to the present invention includes offsetting means that keeps a slope voltage (Vslp) shifted from the ground potential to a higher potential by a predetermined offset voltage ?V so that the lower limit level of the slope voltage (Vslp) is higher than that of an error voltage (Verr). With this configuration, it is possible to provide a direct-current stabilized power supply apparatus that can appropriately control a duty ratio without causing oscillation or the like in the overall system, and also to provide an electrical device incorporating such a power supply apparatus.