Patents by Inventor Atsushi Kyan

Atsushi Kyan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate
    Patent number: 6975012
    Abstract: Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: December 13, 2005
    Assignee: Acrorad Co., Ltd.
    Inventors: Miki Moriyama, Masaki Murakami, Atsushi Kyan, Ryoichi Ohno
  • Semiconductor radiation detector element
    Publication number: 20040129994
    Abstract: Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.
    Type: Application
    Filed: October 29, 2003
    Publication date: July 8, 2004
    Applicant: Acrorad Co., Ltd.
    Inventors: Miki Moriyama, Masaki Murakami, Atsushi Kyan, Ryoichi Ohno