Abstract: A thermoplastic resin (thermosetting resin) for forming a microporous layer of a polymer electrolyte fuel cell has a melt viscosity at 350° C. of less than or equal to 200 Pa·s. In an instance where 2 g of the thermoplastic resin (thermosetting resin) is immersed in 100 ml of hot water having a temperature of 100° C. for 6 hours, an amount of metal ions dissolved from the thermoplastic resin (thermosetting resin) is less than or equal to 65 ppm.

Abstract: An electrophotographic device member R is used in an electrophotographic device. The electrophotographic device member R has a surface layer 1. The surface layer 1 has a matrix polymer 11 forming a skeleton of the surface layer 1 and a surface modifier 12 contained in the matrix polymer 11. The surface modifier 12 is composed of a copolymer containing, in its molecule, a first polymerization unit derived from a (meth)acrylate having a silicone group 121 and a second polymerization unit derived from a (meth)acrylate having a fluorine-containing group 122.

Abstract: An electrophotographic device member R is used in an electrophotographic device. The electrophotographic device member R has a surface layer 1. The surface layer 1 has a matrix polymer 11 forming a skeleton of the surface layer 1 and a surface modifier 12 contained in the matrix polymer 11. The surface modifier 12 is composed of a copolymer containing, in its molecule, a first polymerization unit derived from a (meth)acrylate having a silicone group 121 and a second polymerization unit derived from a (meth)acrylate having a fluorine-containing group 122.

Abstract: Provided is a developing roll for use in an electrophotographic machine capable of preventing an ion conductive agent from blooming and retaining long-term charge decay characteristics. The roll (1) includes a shaft (2), an elastomeric layer (3) and a surface layer (4), wherein the surface layer contains a composition containing an (A) ingredient defining a binder resin having a functional group reactive with an alkoxy silyl group in a (B) ingredient, and the (B) ingredient defining an ion conductive agent containing a cation having a chemical structure represented by R1-N+-R2-Si(OR3)3, where R1: a cyclic organic group or a linear organic group, R2: a group containing at least (CH2)n, n representing an integer number, and R3: an alkyl group, wherein the cation is bound with the (A) ingredient, and wherein the (B) ingredient is 0.10 to 3 parts by mass with respect to 100 parts by mass of the (A) ingredient.

Abstract: A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure.

Abstract: A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure

Abstract: A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure.

Abstract: The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.

Abstract: A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal including a desired defect region over a whole plane in a radial direction of the crystal entirely in a direction of the crystal growth axis can be produced effectively for a short time at a high yield.

Abstract: The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.

Abstract: The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions including a diameter of the straight body of the single crystal, a rotation rate of the single crystal during pulling the single crystal, a flow rate of an inert-gas introduced into the chamber, a position of a heater heating the raw material melt and a distance between the melt surface of the raw material melt and a heat insulating member provided in the chamber so as to oppose to the surface of the raw material melt, thereby V/G which is a ratio of the pulling rate V and the temperature gradient G of the crystal is controlled so that a single crystal including a desired defect region

Abstract: The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.

Abstract: A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure.

Abstract: A ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, can be used as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside or on the surface thereof has been sintered such that a fractured section thereof exhibits intergranular fracture.

Abstract: It is an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.

Abstract: It is an object of the present invention to provide a ceramic substrate for a semiconductor producing/examining device which has high fracture toughness value, excellent thermal shock resistivity, high thermal conductivity and an excellent temperature rising and falling properties, and is preferable as a hot plate, an electrostatic chuck, a wafer prober and the like. A ceramic substrate, for a semiconductor producing/examining device, having a conductor formed inside thereof or on the surface thereof of the present invention is the ceramic substrate, wherein said ceramic substrate has been sintered such that a fractured section thereof exhibits intergranular fracture.

Abstract: Prepregs, comprising the following components [A], [B] and [C], with the component [C] distributed near either or both of the surface layers without being regularly arranged.[A]: Long reinforcing fibers[B]: A matrix resin[C]: Long thermoplastic resin fibersThe prepregs of the present invention are tacky and drapable, and the composite materials obtained by heating and forming the prepregs are high in heat resistance, and very high in impact resistance and inter-layer toughness. Furthermore, the prepregs are easy to produce and high in their latitude in availability of materials.

Abstract: An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt. These operations are automatically performed.

Abstract: A prepreg comprising (a) reinforcing fibers and (b) a matrix resin which comprises specific epoxy resin composition, a curing agent with a specific structure and a highly heat resistant thermoplastic resin, the cured product of which has a low water absorption. An interlayer toughened prepreg containing reinforcing fibers and a matrix resin comprising a specific epoxy resin composition, a hardening agent with a specific structure and a highly heat resistant thermoplastic resin is also provided. In addition, a cured product can be obtained by curing any of the above prepregs, which product satisfies both impact resistance (residual compressive strength after impact) and heat and wet property (compressive strength of notched coupon at high temperature and high humidity) at high levels, even though these properties have been in contradictory relation in the conventional techniques.

Abstract: An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt These operations are automatically performed.