Abstract: The present invention is directed to a novel water-repellent protective film-forming agent and a novel water-repellent protective film-forming liquid chemical, each of which is for forming a water-repellent protective film on a silicon element-containing surface of a wafer, and a method of surface-treating a wafer with the use of the agent in liquid form or the liquid chemical. The water-repellent protective film-forming agent according to the present invention includes at least one kind of silicon compound selected from the group consisting of guanidine derivatives of the following general formula [1] and amidine derivatives of the following general formula [2].

Abstract: The present invention is directed to a liquid chemical for forming a water-repellent protective film on a silicon element-containing wafer surface, a method of preparing the liquid chemical and a method of manufacturing a surface-treated body with the use of the liquid chemical, wherein the liquid chemical includes the following components: (I) a silylation agent; (II) at least one kind of nitrogen-containing compound selected from the group consisting of those of the following general formulas [1] and [2]; and (III) an organic solvent.

Abstract: Disclosed are a water-repellent protective film forming agent for forming a water-repellent protective film on a silicon element-containing surface of a wafer and a water-repellent protective film forming liquid chemical in which the water-repellent protective film forming agent is dissolved in an organic solvent, characterized in that the water-repellent protective film forming agent consists of at least one kind of silicon compound selected from the group consisting of a sulfonimide derivative represented by the following general formula [1], a sulfonimide derivative represented by the following general formula [2] and a sulfonmethide derivative represented by the following general formula [3].

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4?a?b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4?g?h?w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

Abstract: [Problem] To provide a method for preparing a protective film-forming liquid chemical, in a method for producing a wafer having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern. The liquid chemical forms a water-repellent protective film on the uneven pattern of the wafer and improves a cleaning step which tends to induce a pattern collapse, and particularly provides a good persistence (pot life) of the improving effect. [Solution] A method for preparing a liquid chemical for forming a water-repellent protective film, the liquid chemical being for forming a water-repellent protective film at the time of cleaning the wafer at least on surfaces of recessed portions of the uneven pattern, the liquid chemical containing a nonaqueous organic solvent, a silylation agent, and an acid or base.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: The present invention provides a pressure feed container capable of ensuring the cleanliness of a liquid such as a protective film-forming liquid chemical or a protective film-forming liquid chemical kit for preparing the liquid chemical even after long-term storage, and also capable of suppressing electrostatic charge in the liquid. The present invention provides a pressure feed container configured to store a protective film-forming liquid chemical or a protective film-forming liquid chemical kit that is mixed into the protective film-forming liquid chemical, and to transfer a liquid upon application of pressure to the inside of the container, the protective film-forming liquid chemical being for forming a water-repellent protective film on at least surfaces of recessed portions of an uneven pattern formed on a surface of a wafer containing a silicon element at least at a part of the uneven pattern.

Abstract: A method for preparing a liquid chemical for forming a water-repellant protective film, the liquid chemical having a solvent and an agent for forming a water-repellant protective film, the liquid chemical being for forming a water-repellent protective film at least on surfaces of recessed portions of an uneven pattern of a wafer having the uneven pattern at its surface, the method including: a first refinement step for eliminating the elements (metal impurities) Na, Mg, K, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn and Ag in a solvent by distilling the solvent or by a particle-eliminating membrane and an ion exchange resin membrane; a mixing step for mixing the solvent after the first refinement step and an agent for forming a water-repellant protective film; and a second refinement step for eliminating particles in a liquid chemical after the mixing step by a particle-eliminating membrane.

Abstract: Disclosed is a method of producing a hafnium amide complex represented by general formula: Hf(NR4R5)4, characterized by comprising: carrying out a reduced-pressure distillation after a lithium alkylamide represented by general formula: Li(NR4R5) is added to and allowed to react with a tertiary hafnium alkoxide complex represented by general formula: Hf[O(CR1R2R3)]4. (In the formulas, R1, R2 and R3 independently represent either a phenyl group, a benzyl group, or a primary, secondary or tertiary alkyl group having a carbon number 1-6; and R4 and R5 independently represent either a methyl group or an ethyl group; however, a case where all of R1, R2 and R3 are methyl groups, and a case where one of R1, R2 and R3 is an ethyl group and the other two are methyl groups are excluded.

Abstract: Disclosed herein is a method for preparing a liquid chemical for forming a water-repellent protective film, the liquid chemical being for forming the water-repellent protective film at the time of cleaning a wafer having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern at least on surfaces of recessed portions of the uneven pattern, the liquid chemical containing a nonaqueous organic solvent, a silylation agent, and an acid or a base. The method includes (i) adjusting a water content of the nonaqueous organic solvent to 200 mass ppm or less by dehydration; and (ii) mixing the nonaqueous organic solvent, the silylation agent, and the acid or the base after the adjusting step.

Abstract: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4?a?b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4?g?h?w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

Abstract: Disclosed is a method of producing a hafnium amide complex represented by general formula: Hf(NR4R5)4, characterized by comprising: carrying out a reduced-pressure distillation after a lithium alkylamide represented by general formula: Li(NR4R5) is added to and allowed to react with a tertiary hafnium alkoxide complex represented by general formula: Hf[O(CR1R2R3)]4. (In the formulas, R1, R2 and R3 independently represent either a phenyl group, a benzyl group, or a primary, secondary or tertiary alkyl group having a carbon number 1-6; and R4 and R5 independently represent either a methyl group or an ethyl group; however, a case where all of R1, R2 and R3 are methyl groups, and a case where one of R1, R2 and R3 is an ethyl group and the other two are methyl groups are excluded.

Abstract: To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor. To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.

Abstract: [Task] To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor. [Solving Means] To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.

Abstract: Disclosed are first to sixth processes for respectively producing hafnium tetra-tertiary-butoxide, tetrakis(acetylacetonato)hafnium, tetrakis(1-methoxy-2-methyl-2-propanolato)hafnium, hafnium tetra-tertiary-amyloxide, tetrakis(3-methyl-3-pentoxy)hafnium, and tetrakis(hexafluoroacetylacetonato)hafnium. The first process includes the steps of (a) adding a compound A(OyXOnRf)m (e.g., CF3SO3H) to a crude hafnium amide Hf[N(R1)(R2)]4; (b) subjecting a product of the step (a) to a distillation under reduced pressure; (c) adding a lithium alkylamide Li(NR3R4) to a fraction obtained by the step (b); (d) subjecting a product of the step (c) to a distillation under reduced pressure; (e) adding tertiary butanol to a fraction obtained by the step (d); and (f) subjecting a product of the step (e) to a distillation under reduced pressure.

Abstract: Disclosed are first to sixth processes for respectively producing hafnium tetra-tertiary-butoxide, tetrakis(acetylacetonato)hafnium, tetrakis(1-methoxy-2-methyl-2-propanolato)hafnium, hafnium tetra-tertiary-amyloxide, tetrakis(3-methyl-3-pentoxy)hafnium, and tetrakis(hexafluoroacetylacetonato)hafnium. The first process includes the steps of (a) adding a compound A(OyXOnRf)m (e.g., CF3SO3H) to a crude hafnium amide Hf[N(R1)(R2)]4; (b) subjecting a product of the step (a) to a distillation under reduced pressure; (c) adding a lithium alkylamide Li(NR3R4) to a fraction obtained by the step (b); (d) subjecting a product of the step (c) to a distillation under reduced pressure; (e) adding tertiary butanol to a fraction obtained by the step (d); and (f) subjecting a product of the step (e) to a distillation under reduced pressure.

Abstract: A process for producing a high-purity hafnium amide includes the steps of (a) adding a compound which contains a carbonyl group or sulfonyl group and is represented by the formula of A(OyXOnRf)m (e.g., CF3SO3H, Hf(CF3SO3)4, (CF3SO2)2O, CF3CO2H, CH3SO3H, C6H5SO3H, and (CH3SO2)2O), to a crude hafnium amide which is represented by the formula of Hf[N(R1)(R2)]4, where each of R1 and R2 independently represents a methyl group or ethyl group, and which contains a zirconium component as an impurity; and (b) subjecting a product of the step (a) to a distillation under reduced pressure, thereby removing the zirconium component from the crude hafnium amide.