Patents by Inventor Atsushi Sawachi

Atsushi Sawachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230230812
    Abstract: A system includes: gas supply flow paths for supplying independently a main gas to a processing chamber; a flow rate control valve disposed in each gas supply flow path; an additive-gas flow path connected to the flow rate control valve; a valve for addition disposed in the additive-gas flow path; and a controller for controlling the flow rate control valve and the valve for addition to execute controls of: calculating flow rates of the main gas and an additive gas to be mixed with the main gas; calculating a total of the flow rates; calculating an internal pressure of each gas supply flow path with the total flow rate, and first and second relationships between previously acquired gas flow rates and gas pressures of the main gas and the additive gas, respectively; calculating an internal pressure ratio; and proportionally controlling openings of flow rate control valves based on the ratio.
    Type: Application
    Filed: January 18, 2023
    Publication date: July 20, 2023
    Inventor: Atsushi SAWACHI
  • Patent number: 11698648
    Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: July 11, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Patent number: 11694878
    Abstract: When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: July 4, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Atsushi Sawachi
  • Patent number: 11538665
    Abstract: A gas supply system includes first and second gas supply lines, first and second valves, and a controller. The first gas supply line is connected between a process gas source and a substrate processing chamber and has an intermediate node. The second gas supply line is connected between a purge gas source and the intermediate node. The first valve is disposed upstream of the intermediate node on the first gas supply line. The second valve is disposed upstream of the first valve on the first gas supply line. A controller controls the first and second valves to open the first and second valves in a first mode for supplying a process gas from the process gas source to the substrate processing chamber, and close the first and second valves in a second mode for supplying a purge gas from the purge gas source to the substrate processing chamber.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: December 27, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Patent number: 11513541
    Abstract: The method for inspecting the flow rate controller for controlling a flow rate of a fluid includes creating and recording a three-dimensional database in which a first pressure, a set flow rate or a second pressure, and a control value of a piezoelectric element are associated with each other, based on reference data, measuring, as target data, control values of the piezoelectric element corresponding to the first pressure detected by a first pressure detector and the set flow rate specified in a recipe of a substrate processing process or the second pressure detected by a second pressure detector, at the time of the execution of the substrate processing process, and determining whether or not there is a problem in a diaphragm valve, by comparing the target data with the reference data included in the three-dimensional database.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: November 29, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Publication number: 20220148890
    Abstract: A processing apparatus which processes a substrate is disclosed. The processing apparatus comprises: a plurality of processing chambers which process the substrate in an atmosphere of a desired processing gases; a plurality of tank units provided for each of the plurality of processing chambers, the plurality of tank units including a plurality of tanks configured for temporarily storing the processing gases; and one or more gas boxes supplying the processing gases to the processing chambers via the tank units. The substrate processing apparatus allows the number of gas boxes to be reduced.
    Type: Application
    Filed: November 9, 2021
    Publication date: May 12, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Kosuke OGASAWARA
  • Publication number: 20220122818
    Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.
    Type: Application
    Filed: October 19, 2021
    Publication date: April 21, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Jun HIROSE, Takuya NISHIJIMA, Ichiro SONE, Suguru SATO
  • Publication number: 20220115213
    Abstract: When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.
    Type: Application
    Filed: December 22, 2021
    Publication date: April 14, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Atsushi SAWACHI
  • Patent number: 11217432
    Abstract: When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: January 4, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Atsushi Sawachi
  • Publication number: 20210407768
    Abstract: A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.
    Type: Application
    Filed: June 24, 2021
    Publication date: December 30, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Jun HIROSE, Takuya NISHIJIMA, Ichiro SONE, Suguru SATO
  • Publication number: 20210339350
    Abstract: A part replacement system includes a part storage device configured to store an unused consumable part, and a replacement device that is connected to a processing device and the part storage device, the replacement device being configured to replace a used consumable part installed in the processing device with the unused consumable part stored in the part storage device. The replacement device is moved to a position of the processing device having the used consumable part that requires replacement, and the replacement device is connected to the processing device, and the part storage device is moved to a position of the replacement device connected to the processing device having the used consumable part that requires replacement, and the part storage device is connected to the replacement device.
    Type: Application
    Filed: April 30, 2021
    Publication date: November 4, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Ichiro Sone, Suguru Sato, Takuya Nishijima
  • Publication number: 20210216088
    Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 15, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Publication number: 20210175055
    Abstract: A measuring device for a vacuum processing apparatus including a processing chamber having a first gate for loading and unloading a substrate and a second gate different from the first gate is provided. The measuring device includes a case having art opening that is sized to correspond to the second gate of the processing chamber and is airtightly attachable to the second gate, a decompressing mechanism configured to reduce a pressure in the case, and a measuring mechanism accommodated in the case and configured to measure a state in the processing chamber through the opening in a state where the pressure in the case is reduced by the decompressing mechanism.
    Type: Application
    Filed: December 5, 2020
    Publication date: June 10, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Ichiro SONE, Takuya NISHIJIMA, Suguru SATO
  • Publication number: 20210134564
    Abstract: A gas supply system includes first and second gas supply lines, first and second valves, and a controller. The first gas supply line is connected between a process gas source and a substrate processing chamber and has an intermediate node. The second gas supply line is connected between a purge gas source and the intermediate node. The first valve is disposed upstream of the intermediate node on the first gas supply line. The second valve is disposed upstream of the first valve on the first gas supply line. A controller controls the first and second valves to open the first and second valves in a first mode for supplying a process gas from the process gas source to the substrate processing chamber, and close the first and second valves in a second mode for supplying a purge gas from the purge gas source to the substrate processing chamber.
    Type: Application
    Filed: October 26, 2020
    Publication date: May 6, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi SAWACHI, Norihiko AMIKURA
  • Patent number: 10996688
    Abstract: A gas supply system according to the present disclosure includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes. The gas supply system also includes a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes. The gas supply system further includes a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: May 4, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Publication number: 20210111004
    Abstract: A flow rate controller includes a valve and a valve control unit. The valve is configured to control a flow rate of a gas supplied to a processing device. The valve control unit is configured to open the valve to start a control of the flow rate of the gas when the processing device has issued a command that instructs a start of supplying gas; calculate a cumulative flow amount by integrating the flow rate of the gas at every predetermined cycle from a time point at which the command is issued; and close the valve to stop the control of the flow rate of the gas at a time point at which the calculated cumulative flow amount has reached a predetermined target cumulative flow amount.
    Type: Application
    Filed: June 26, 2019
    Publication date: April 15, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Atsushi SAWACHI
  • Publication number: 20210043425
    Abstract: When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.
    Type: Application
    Filed: June 18, 2019
    Publication date: February 11, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Atsushi SAWACHI
  • Publication number: 20210013012
    Abstract: A performance calculation method is provided. In the performance calculation method, shipment inspection data of multiple flow rate controllers are acquired. Further, first performance values indicating, as deviation values, performance of the flow rate controllers are calculated based on the acquired shipment inspection data and first coefficients for items indicating the performance of the flow rate controllers. Further, second performance values indicating, as deviation values, performance of a processing apparatus using the flow rate controllers are calculated based on the calculated first performance values and second coefficients for items indicating the performance of the processing apparatus.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 14, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura
  • Patent number: 10665431
    Abstract: A method for performing a process on a target in a chamber. A gas discharge unit includes a first space having a discharge hole for discharging a first gas, a second space having a discharge hole for discharging a second gas and a third space having a discharge hole for discharging a gas generated between the first and second spaces. A distribution unit includes a first distribution pipe communicating with the first space, a second distribution pipe communicating with the second space and a third distribution pipe communicating with the third space. A valve group includes a first valve opened or closed to the first distribution pipe and a second valve opened or closed to the second distribution pipe. The method includes switching, without mixing the first gas and the second gas, the gas discharged from the discharge hole in the third space by opening or closing the valve group.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: May 26, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kazuyuki Tezuka, Kenichi Kato, Atsushi Sawachi, Takamichi Kikuchi, Takanori Mimura
  • Patent number: 10665430
    Abstract: A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas; an orifice provided downstream of the control valve and at a terminus of the second flow channel; a switching valve, provided at a connection point between the first flow channel and the terminus of the second flow channel, configured to control a supply timing of the second gas; an exhaust mechanism, connected to a flow channel between the control valve and the orifice in the second flow channel, configured to exhaust the second gas; and a controller configured to bring the control valve, the switching valve and the exhaust mechanism into operation.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: May 26, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Atsushi Sawachi, Norihiko Amikura, Kouji Nishino, Yohei Sawada, Yoshiharu Kishida