Abstract: An optical absorption layer having a plurality of openings corresponding to lenses is provided between a lens array and a first electrode. An edge of each of the openings is provided such that light entering in a normal direction of a substrate and traveling through an area where the corresponding lens has a maximum inclination angle is blocked.

Abstract: A method includes forming a light absorbing layer, and forming a foundation layer before forming a lens portion such that the foundation layer covers a region where the lens portion is to be formed, wherein the foundation layer is in contact with the light absorbing layer and the lens portion once the lens portion is formed.

Abstract: In a display apparatus in which light from a light-emitting element is extracted by an optical element, a difference in reflection characteristics between a display area including the optical element corresponding to the light-emitting element and a non-display area including no optical element impairs the appearance of the display apparatus. Optical elements are uniformly disposed in a display area and a non-display area of a display apparatus.

Abstract: An optical absorption layer having a plurality of openings corresponding to lenses is provided between a lens array and a first electrode. An edge of each of the openings is provided such that light entering in a normal direction of a substrate and traveling through an area where the corresponding lens has a maximum inclination angle is blocked.

Abstract: A method includes forming a light absorbing layer, and forming a foundation layer before forming a lens portion such that the foundation layer covers a region where the lens portion is to be formed, wherein the foundation layer is in contact with the light absorbing layer and the lens portion once the lens portion is formed.

Abstract: Provided is a method for manufacturing an organic electroluminescent display apparatus that includes a substrate and a plurality of pixels each including two or more types of sub-pixels, in which the pixels are arranged in a display area of the substrate, and, among the sub-pixels, one type of sub-pixels are specified sub-pixels provided at certain intervals. The specified sub-pixels are formed by selectively forming the (2n-1)th specified sub-pixels (wherein n represents an integer of 1 or more) numbered from a side end of the display area using a mask having openings at positions corresponding to the (2n-1)th specified sub-pixels numbered from the side end, and selectively forming the (2n)th specified sub-pixels numbered from the side end using a mask having openings at positions corresponding to the (2n)th specified sub-pixels numbered from the side end.

Abstract: An organic light-emitting apparatus includes a substrate, a plurality of organic light-emitting devices which are arranged above the substrate and which form a light-emitting section, a circuit section which is disposed around the light-emitting section and which controls the operation of the organic light-emitting devices, a plurality of wiring lines extending between the light-emitting section and the circuit section, and a resin layer which extends in the light-emitting section and which extends from the light-emitting section over the wiring lines. The resin layer has gaps extending between the wiring lines.

Abstract: Provided is an organic electroluminescence display apparatus including: a substrate; a polarizing plate disposed on a display surface side being an opposite side of the substrate; a thin film transistor; and a planarization layer for reducing an irregular form corresponding to a circuit pattern of the thin film transistor, the planarization layer including a pixel electrode and an organic electroluminescence device and including at least two layers, a thickness of each of the planarization layers being set to be smaller than a maximum height of irregularities resulting from the thin film transistor, each of the planarization layers including a contact hole provided at a distinct planar position and a connection wiring layer capable of electrically connecting the thin film transistor and the pixel electrode via the contact hole, and a tapered portion of the planarization layer closest to the organic electroluminescence device having 30 degrees or less.

Abstract: An organic light-emitting apparatus includes a substrate, a plurality of organic light-emitting devices which are arranged above the substrate and which form a light-emitting section, a circuit section which is disposed around the light-emitting section and which controls the operation of the organic light-emitting devices, a plurality of wiring lines extending between the light-emitting section and the circuit section, and a resin layer which extends in the light-emitting section and which extends from the light-emitting section over the wiring lines. The resin layer has gaps extending between the wiring lines.

Abstract: A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

Abstract: Provided is a stacked photovoltaic device characterized in that: a first i-type semiconductor layer comprises amorphous silicon hydride, and second and subsequent i-type semiconductor layers comprise amorphous silicon hydride or microcrystalline silicon, the i-type semiconductor layers being stacked in order from a light incidence side; and when an open circuit voltage is assigned Voc in the case where a pin photoelectric single element is manufactured using a pin element having the i-type semiconductor layer made of microcrystalline silicon of pin elements having the second and subsequent i-type semiconductor layers, respectively, and a layer thickness of the i-type semiconductor layer concerned is assigned t, a short-circuit photoelectric current density of the stacked photovoltaic device is controlled by the pin element including the i-type semiconductor layer having the largest value of Voc/t.

Abstract: A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

Abstract: The present invention provides a photovoltaic device being capable of generating a large amount of current even with thin joined semiconductor layers, has a high photoelectric conversion efficiency and can be manufactured inexpensively at a low temperature together with a manufacturing method of the same, a photovoltaic device integrated with a building material and a power-generating apparatus. The photovoltaic device is formed by depositing joined semiconductor layers on a substrate, wherein a ratio of projected areas of regions on a surface of the joined semiconductor layers that have heights not smaller than a center value of concavities and convexities to a projected area of the entire surface of the joined semiconductor layers is higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than a center value of concavities and convexities on a surface of the substrate to a projected area of the entire surface of the substrate.

Abstract: A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

Abstract: A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

Abstract: An ink directly contacts a heating resistor which forms a portion of an electrothermal transducer. The ink is ejected from orifices by using thermal energy generated by supplying an electric current to the heating resistor. The concentration of alkali metal ion is equal to or less than 5×10−3 mol/l.

Abstract: The present invention provides a photovoltaic device being capable of generating a large amount of current even with thin joined semiconductor layers, has a high photoelectric conversion efficiency and can be manufactured inexpensively at a low temperature together with a manufacturing method of the same, a photovoltaic device integrated with a building material and a power-generating apparatus. The photovoltaic device is formed by depositing joined semiconductor layers on a substrate, wherein a ratio of projected areas of regions on a surface of the joined semiconductor layers that have heights not smaller than a center value of concavities and convexities to a projected area of the entire surface of the joined semiconductor layers is higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than the center value of concavities and convexities on a surface of the substrate to a projected area of the entire surface of the substrate.

Abstract: A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.

Abstract: A deposition method is adapted to deposit a zinc oxide film that has a high light transmittance, an adequate specific electric resistance and a large thickness at a high deposition rate and at low cost in a process that may last long but is stable. The method for depositing a zinc oxide film on a substrate held in an inert gas atmosphere is conducted by magnetron sputtering so that the maximum magnetic flux density in a direction parallel to the surface of the zinc oxide target is held to be not higher than 350 gauss.

Abstract: The present invention is to provide a method for producing a photovoltaic element having a reflective layer with high reflectivity and with high reliability and thus showing high photoelectric conversion efficiency, and especially to provide a production method causing no change in the reflection characteristics of a deposited film, even in continuous production on a long substrate for a long period. The production method of a photovoltaic element of the present invention is a method for producing a photovoltaic element having a reflective layer and a semiconductor layer on a long substrate, comprising the steps of supplying an inert gas, hydrogen atoms, and oxygen atoms into a vacuum vessel housing the substrate and effecting sputtering by use of a target comprising aluminum, thereby forming the reflective layer on the substrate.