Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: A sealing device includes a mounted part to be mounted to the inner peripheral surface of the shaft hole, a cylindrical part disposed radially inside the mounted part, a seal lip portion extending from the cylindrical part and in contact with the outer peripheral surface of the rotational shaft, a bellows part connecting the mounted part and the cylindrical part, and an annular sliding member made of a resin and disposed radially inside the cylindrical part, the outer peripheral surface of the rotational shaft being slidable on the annular sliding member.

Abstract: An imaging device according to the present disclosure includes: an imaging unit configured to perform an imaging operation; a data generator configured to generate first power supply voltage data corresponding to a first power supply voltage; and a flag generation section configured to generate a flag signal for the first power supply voltage by comparing the first power supply voltage data and first reference data. The first power supply voltage is supplied to the imaging unit.

Abstract: An imaging device according to the present disclosure includes a plurality of pixels each including a first light-receiving element and a second light-receiving element, the plurality of pixels including a first pixel. The imaging device further includes a generating section that generates a first detection value on a basis of a light-receiving result by the first light-receiving element of each of the plurality of pixels, and generates a second detection value on a basis of a light-receiving result by the second light-receiving element of each of the plurality of pixels. The imaging device further includes a diagnosis section that performs a diagnosis processing on a basis of a detection ratio that is a ratio between the first detection value and the second detection value in the first pixel.

Abstract: The imaging device includes a pixel including a photoelectric converter, an output line, a readout circuit unit connected to the output line, and a control unit. The readout circuit unit includes an amplifier circuit, a first switch for resetting the amplifier circuit, a sample-and-hold circuit, a second switch provided between the amplifier circuit and the sample-and-hold circuit, and a gain switching circuit. The control unit performs a first period of resetting the amplifier circuit by first switch, and a second period of connecting the amplifier circuit and the sample-and-hold circuit by the second switch. The first and second periods at least partially overlap with each other, and a timing at which the second switch transitions from an on state to an off state in the second period is later than a timing at which the first switch transitions from an on state to an off state in the first period.

Abstract: The imaging device includes a pixel including a photoelectric converter, a first switch, a charge holding portion, and an output unit, an output line, a readout circuit unit connected to the output line, and a control unit. The readout circuit unit includes an amplifier circuit, a second switch between the output line and the amplifier circuit, and a comparator comparing the amplified pixel signal with a reference signal. The control unit performs outputting a pixel signal by transferring the charge in the photoelectric converter to the charge holding portion, determining a level of the pixel signal amplified by the amplifier circuit, and setting a gain of the amplifier circuit in accordance with a result of determination, and sets the second switch to off during the first switch is in on and until the output unit is settled after the first switch transitions from on to off.

Abstract: A sealing device seals a gap between a housing and a rotational shaft located in a shaft hole provided in the housing. The sealing device includes: a mounted part that is to be mounted on the shaft hole; an inner annular part; a seal lip that is to be in contact with the outer peripheral surface of the rotational shaft; a bellows part connecting the mounted part with the inner annular part; a sound insulation ring fixed to the mounted part; and a circular annular sound insulation lip projecting from the inner annular part or the bellows part toward the sound insulation ring. The sound insulation lip protrudes obliquely radially outward. The sound insulation ring includes a circular annular part with which the distal end of the sound insulation lip is in contact.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: The present technology relates to a solid-state imaging device, a driving method, and an electronic device that are able to enhance a gray scale of a combined pixel value obtained from a pixel including a plurality of photoelectric conversion units having different light receiving sensitivities. In a pixel array unit, a pixel including a plurality of photoelectric conversion units having different light receiving sensitivities is disposed. An analog to digital (AD) conversion unit that compares an electric signal corresponding to a charge of the photoelectric conversion unit having a low light receiving sensitivity among the plurality of photoelectric conversion units included in the pixel of the pixel array unit with a nonlinear reference signal that changes nonlinearly to perform AD conversion on the electric signal. The present technology is able to be applied to, for example, a complementary metal-oxide semiconductor (CMOS) image sensor.

Abstract: A method for removing a halogen fluoride in a mixed gas by reacting the mixed gas containing a halogen fluoride including bromine or iodine with a removing agent, wherein the removing agent is a chloride, bromide or iodide of potassium, sodium, magnesium, calcium and barium. Also disclosed is a quantitative analysis method as well as a quantitative analyzer for a gas component contained in a hydrogen fluoride mixed gas, the method characterized by reacting a mixed gas containing a halogen fluoride and another gas component with a removing agent, thereby removing the halogen fluoride in the mixed gas, further removing produced by-products, and quantitatively analyzing a residual gas by a gas chromatograph.

Abstract: Disclosed is a screen display method for providing display, on a display screen included in a terminal device, for a given process to be performed for an image processing apparatus. The screen display method includes displaying, in a chat style, a plurality of instructions regarding the given process and a plurality of responses to the instructions, and providing progress display indicating a progress of the given process.

Abstract: A method for setting a printer performs initial setup of the printer by using a setting image displayed on a terminal device. The method includes displaying, in a chat style in the setting image, a plurality of information logs regarding the initial setup of the printer, an instruction information log regarding instruction information including an instruction for a user who operates the printer, and a response log regarding a user response input by the user in response to the instruction information.

Abstract: A method for precise plasma etching of micropatterns on a silicon substrate containing silicon or additionally having a silicon oxide film. An etching method for plasma-etching a silicon substrate having silicon or a silicon oxide film using a halogen fluoride having a nitrogen (N2) content of 1 vol % or less as an etching gas. Also disclosed is a method for producing a semiconductor using the etching method.

Abstract: Degradation of image quality is suppressed. A solid-state imaging device according to an embodiment includes: a plurality of first photoelectric conversion elements having a first sensitivity; a plurality of second photoelectric conversion elements having a second sensitivity lower than the first sensitivity; a plurality of charge storage regions that stores charge generated by each of the plurality of second photoelectric conversion elements; a plurality of first color filters; and a plurality of second color filters. In each of the plurality of first photoelectric conversion elements, the second color filter for the second photoelectric conversion element included in the charge storage region closest to the first photoelectric conversion element transmit a wavelength component identical to that of the first color filter for the first photoelectric conversion element closest to the charge storage region.

Abstract: A production method for a cell in which only one allele is genome-edited includes: a step of introducing, into a cell, (A) at least one selected from the group consisting of (a1) a guide RNA in which one or more nucleotide residues are added to a 5?-end of a spacer sequence, (a2) a guide RNA containing a spacer sequence having single-base or multiple-base mismatches with respect to a target sequence, and (a3) an expression vector that can cause the guide RNA of (a1) or (a2) to be expressed, and (B) at least one selected from the group consisting of a Cas protein and an expression vector that can cause the Cas protein to be expressed.

Abstract: There is provided a solid-state imaging device having a configuration suitable for high integration. The solid-state imaging device includes a semiconductor layer, a photoelectric converter, a storage capacitor, and a first transistor. The photoelectric converter is provided in the semiconductor layer, and generates an electric charge corresponding to a received light amount by photoelectric conversion. The storage capacitor is provided on the semiconductor layer, and includes a first insulating film having a first electrical film thickness. The first transistor is provided on the semiconductor layer, and includes a second insulating film having a second electrical film thickness larger than the first electrical film thickness.

Abstract: In one example, an imaging device including a plurality of pixel circuits, a first control line, a second control line, a first voltage supply line, a second voltage supply line, a first light-receiving element, and a diagnosis unit is disclosed. The pixel circuits each include a first terminal, a second terminal, a third terminal, an accumulation unit, a first transistor, a second transistor, and an output unit. The first transistor is couples the third terminal to the accumulation unit on the basis of a voltage of the first terminal. The second transistor supplies a predetermined voltage to the accumulation unit on the basis of a voltage of the second terminal. The output unit outputs a signal corresponding to a voltage in the accumulation unit.

Abstract: To obtain imaging device capable of reporting more reliably an occurrence of trouble. The imaging device of the present disclosure includes an imaging sensor configured to generate image data, a diagnosis circuit configured to perform diagnosis processing for the imaging sensor and an output circuit configured to output a flag signal corresponding to a result of the diagnosis processing, wherein the flag signal is set to a ground level signal in response to the result of the diagnosis processing indicating an error.

Abstract: Provided is a carbon foam and a membrane electrode assembly having linear portions and node portions joining the linear portions; and a carbon foam and a membrane electrode assembly having linear portions and node portions joining the linear portions, where the carbon content is 51 mass % or more, and the mean deviation of coefficient of friction by the Kawabata evaluation system method is 0.006 or less.

Abstract: A coupling device attaches a sealing device to a panel. The sealing device seals a gap between the panel and a rotational shaft located in a shaft hole provided in the panel. The coupling device includes: a supporting wall part formed with a through hole into which the sealing device is to be inserted; multiple sealing-device hooks located on a first surface side of the supporting wall part and located around the through hole, the sealing-device hooks for being hooked on the sealing device from the outside; and multiple panel hooks located on a second surface side of the supporting wall part and located around the through hole, the panel hooks for being inserted into the shaft hole of the panel and to be hooked on a periphery of the shaft hole of the panel from the inside.