Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: Provided is a solid state imaging apparatus including a transparent substrate formed of a birefringent material having a high refractive index in a direction vertical to a light receiving surface and a low refractive index in a direction parallel to the light receiving surface, the transparent substrate being disposed on the light receiving surface, and an electronic device including the solid state imaging apparatus.

Abstract: A vehicle lamp controller, a vehicle lamp system, and a vehicle lamp control method are provided. The vehicle lamp system includes an acceleration sensor, a vehicle lamp, and the vehicle controller. The controller includes a receiver configured to receive an acceleration information detected by the acceleration sensor, a control unit configured to derive a vehicle longitudinal direction acceleration and a vehicle vertical direction acceleration from the acceleration information, and to generate a control signal for instructing an adjustment of an optical axis of the vehicle lamp, based on a variation in a ratio between a temporal change amount of the vehicle longitudinal direction acceleration and a temporal change amount of the vehicle vertical direction acceleration during at least one of an acceleration and a deceleration of a vehicle, and a transmitter configured to transmit the control signal to an optical axis adjusting portion of the vehicle lamp.

Abstract: A control device (100) for controlling a vehicle lamp (210) provided in a vehicle is provided. The device includes: a receiver (102) configured to receive an acceleration signal representing an acceleration of the vehicle, from an acceleration sensor configured to detect the acceleration of the vehicle, wherein an inclination angle (?) of the vehicle with respect to a horizontal plane is calculated based on the acceleration signal; a controller (104) configured to: i) generate a first control signal instructing the vehicle lamp to adjust an optical axis of the vehicle lamp in response to a change of the acceleration signal, when the vehicle has already stopped; and ii) generate a second signal instructing the vehicle lamp to maintain the optical axis of the vehicle lamp, when the vehicle is traveling on a road surface.

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: A control apparatus of a vehicular lamp includes: a reference information retaining portion configured to retain reference information indicative of a positional relationship of an acceleration sensor axis, a vehicle axis, and a road surface, wherein the reference information is obtained in a predetermined initialization process; a correction ratio generating portion configured to, after the initialization process, calculate an acceleration ratio of an amount of change in a longitudinal acceleration to an amount of change in vertical acceleration of the vehicle while traveling, and derive a correction ratio for correcting a positional relationship of the road surface and at least one of the acceleration sensor axis and the vehicle axis in the reference information, using the obtained acceleration ratio; and a control portion configured to output a signal for adjusting an optical axis position of the vehicular lamp, using the acceleration ratio, the reference information, and the correction ratio.

Abstract: A vehicle head lamp light distribution controller includes an ADB controller configured to: detect a position of a vehicle present ahead of a subject vehicle; determine whether the vehicle ahead of the subject vehicle is a preceding vehicle or an oncoming vehicle; set a threshold vehicle position based on whether the vehicle ahead of the subject vehicle is a preceding vehicle or an oncoming vehicle; compare the threshold vehicle position and the detected vehicle position; and switch light distribution of head lamps of the subject vehicle based on the comparison between the threshold vehicle position and the detected vehicle position.

Abstract: The present invention provides a L-succinylacylase consisting of: (a) a protein coded by a gene consisting of a nucleic acid sequence shown in SEQ ID No: 1; (b) a protein consisting of an amino acid sequence shown in SEQ ID No: 2; (c) a protein coded by a polynucleotide which hybridizes under a stringent condition with a nucleic acid sequence which is complementary to the nucleic acid sequence shown in SEQ ID No: 1 and having an L-succinylaminoacylase activity; or (d) a protein which consists of an amino acid sequence where one or several amino acid(s) is/are substituted, deleted, inserted and/or added in the protein consisting of the amino acid sequence shown in SEQ ID No: 2 and has an L-succinylaminoacylase activity. This enzyme is able to produce a sterically bulky unnatural amino acid such as L-tert-leucine etc. which is useful as an intermediate for pharmaceuticals.

Abstract: A solid-state imaging device with a pixel region in which a plurality of pixels with photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels. The photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium based mixed crystal, and is disposed on a silicon substrate in such a way as to lattice-match the silicon substrate concerned. The pixel isolation portion is a compound semiconductor subjected to doping concentration control or composition control so as to become a potential barrier between the photoelectric conversion films.

Abstract: A solid-state image-taking apparatus which have a solid-state image-taking device includes a chip of the solid-state image-taking device, an imaging lens configured to focus incoming light into an image on the solid-state image-taking device, and a material of a refraction index larger than 1, which is arranged between the chip and the imaging lens.

Abstract: A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface.

Abstract: There is provided a solid-state imaging device including a photoelectric conversion unit, and a reflecting plate that includes a first portion that is provided on a side opposing a light incidence side with respect to the photoelectric conversion unit and formed at a center of a region in which light beams are collected, and a second portion that is formed on a boundary of adjacent regions to be convex on the incidence side with respect to the first portion, and collects reflected light beams within the regions by generating a phase difference between reflected light beams on the first portion and reflected light beams on the second portion.

Abstract: A solid-state image device includes a silicon substrate, and a photoelectric conversion layer arranged on the silicon substrate and lattice-matched to the silicon substrate, the photoelectric conversion layer being composed of a chalcopyrite-based compound semiconductor of a copper-aluminum-gallium-indium-sulfur-selenium-based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium-based mixed crystal.

Abstract: A solid-state imaging device is provided with a pixel region in which a plurality of pixels including photoelectric conversion films are arrayed and pixel isolation portions are interposed between the plurality of pixels, wherein the photoelectric conversion film is a chalcopyrite-structure compound semiconductor composed of a copper-aluminum-gallium-indium-sulfur-selenium based mixed crystal or a copper-aluminum-gallium-indium-zinc-sulfur-selenium based mixed crystal and is disposed on a silicon substrate in such a way as to lattice-match the silicon substrate concerned, and the pixel isolation portion is formed from a compound semiconductor subjected to doping concentration control or composition control in such a way as to become a potential barrier between the photoelectric conversion films disposed in accordance with the plurality of pixels.

Abstract: A physical information acquisition method in which a corresponding wavelength region of visible light with at least one visible light detection unit coupled to an image signal processing unit is detected, each said visible light detection unit comprising a color filter adapted to transmit the corresponding wavelength region of visible light; a wavelength region of infrared light with at least one infrared light detection unit coupled to the image signal processing unit is detected; and, with the signal processing unit, a first signal received from the at least one visible light detection unit by subtracting a product from said first signal is corrected, said product resulting from multiplication of a second signal received from the at least one infrared light detection unit and a predetermined coefficient factor.

Abstract: A solid-state image-taking apparatus which have a solid-state image-taking device includes a chip of the solid-state image-taking device, an imaging lens configured to focus incoming light into an image on the solid-state image-taking device, and a material of a refraction index larger than 1, which is arranged between the chip and the imaging lens.

Abstract: A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

Abstract: A solid-state imaging device includes a photoelectric transformation portion and a micro lens, the micro lens has a first refractive index layer which is a first refractive index and a second refractive index layer which is a second refractive index different from the first refractive index, wherein the micro lens is configured so that a vertical cross section, which is a surface perpendicular to the capturing surface, has a rectangular shape, wherein each of the first refractive index layer and the second refractive index layer are arranged adjacent to each other in a direction along the capturing surface, and an interface between the first refractive index layer and the second refractive index layer in the vertical cross section is formed so as to follow a direction perpendicular to the capturing surface.

Abstract: A solid-state imaging device includes a light sensing portion which is formed on a substrate and generates a signal electric charge according to incident light; a rectangular or gradient-index on-chip micro lens formed on a light incident side above the light sensing portion; and a planarized lens layer which covers the on-chip micro lens and is formed in such a manner that a light incident surface is planarized.

Abstract: There is provided a control device for controlling a vehicle lamp. The device includes: a receiver configured to receive an output value from an inclination sensor; and a controller configured to control an optical axis of the vehicle lamp based on a vehicle attitude angle that is an inclination angle of the vehicle with respect to a road surface. The controller is configured to control the optical axis in a first optical axis control mode or a second optical axis mode, wherein an optical axis angle of the optical axis is adjusted in accordance with the vehicle attitude angle in the first optical axis mode, and the second optical axis control mode is different from the first optical axis control mode. The controller controls the optical axis in the second optical axis control mode, when the vehicle attitude angle is not included in a predetermined range.