Abstract: A sensor device is disclosed for measuring an amount of moisture in a medium that includes: a transmission antenna; a reception antenna to receive electromagnetic waves transmitted from the transmission antenna and through a medium; a measurement unit to measure the electromagnetic waves propagating to the reception antenna; and a sensor casing and further includes a transmission substrate including a plurality of wiring layers and a reception substrate including a plurality of wiring layers, and a measurement unit substrate including a plurality of wiring layers and includes the measurement unit or a first coating layer that, in a part of the transmission substrate, coats an outer circumference of the substrate and is formed from an electromagnetic wave absorbent material and a second coating layer that, in a part of the reception substrate, coats an outer circumference of the substrate and is formed from an electromagnetic wave absorbent material.

Abstract: An information processing apparatus, an information processing system, an information processing method, and a program capable of improving a convenience of a user in an information code payment. A shop terminal includes: an authentication information acquiring unit configured to acquire authentication information corresponding to a user terminal; an authentication information transmitting unit configured to transmit the authentication information acquired by the authentication information acquiring unit to a plurality of payment apparatuses; and an authentication result acquiring unit configured to acquire an authentication result for the authentication information from at least one of the plurality of payment apparatuses.

Abstract: A device for measuring the amount of moisture in a medium that includes a transmission antenna that sends a signal as an electromagnetic wave, a reception antenna that receives the electromagnetic wave sent from the transmission antenna and transmitted through a medium, a measurement section that measures the electromagnetic wave propagated to the reception antenna, and a sensor casing. The sensor device further includes a transmission substrate that includes a plurality of wiring layers and a reception substrate that includes a plurality of wiring layers, or a first covering layer that partially covers an outer periphery of the transmission substrate and a second covering layer that partially covers an outer periphery of the reception substrate The coverings are formed of an electromagnetic wave absorption material. The sensor casing includes a transmission probe casing that accommodates the transmission substrate and a reception probe casing that accommodates the reception substrate.

Abstract: A semiconductor device includes: a channel layer that includes a first nitride semiconductor that contains Ga; a barrier layer that is provided on a first surface side of the channel layer, and includes a second nitride semiconductor that contains In, Al, and Ga; a source electrode and a drain electrode that are provided on a second surface side of the barrier layer opposite to the channel layer side; a gate electrode that is provided between the source electrode and the drain electrode, on the second surface side of the barrier layer; and an insulating layer that is provided between the second surface of the barrier layer and the gate electrode.

Abstract: In a device that measures an amount of moisture in a medium, performance of the device is improved. A sensor device includes a transmitter, a receiver, and a sensor control unit. In this sensor device, a transmitter supplies a transmission signal to a transmission antenna. In addition, in the sensor device, a receiver receives a reception signal corresponding to the transmission signal through a reception antenna. In the sensor device, before measuring a predetermined parameter on the basis of the reception signal, the sensor control unit adjusts electric power of the transmission signal on the basis the reception signal.

Abstract: A semiconductor device includes: a channel layer that includes a first nitride semiconductor that contains Ga; a barrier layer that is provided on a first surface side of the channel layer, and includes a second nitride semiconductor that contains In, Al, and Ga; a source electrode and a drain electrode that are provided on a second surface side of the barrier layer opposite to the channel layer side; and a gate electrode that is provided between the source electrode and the drain electrode, on the second surface side of the barrier layer. An In composition of each of a first region of the barrier layer that faces the source electrode and a second region of the barrier layer that faces the drain electrode is smaller than an In composition of a third region between the first region and the second region of the barrier layer.

Abstract: An image reconstruction method, includes: generating differential data indicating a difference between detection data generated by detecting X-ray that passed through a measurement object by irradiating X-rays to the measurement object and estimate data generated by estimating X-rays that are assumed to have been passed through an estimated structure having been generated by estimating a shape of the measurement object; and generating an image using the differential data and the estimated structure.

Abstract: Measurement accuracy of the amount of moisture is improved by a device that measures the amount of moisture in a medium. The sensor device includes a pair of antennas, a measurement circuit, a transmission path, and a radio wave absorption section. In the sensor device which includes the pair of antennas, the measurement circuit, the transmission path, and the radio wave absorption section, the measurement circuit measures the amount of moisture in a medium between the pair of antennas. Also, the transmission path connects the pair of antennas to the measurement circuit in the sensor device. The radio wave absorption section is formed in the surroundings of the transmission path in the sensor device.

Abstract: In a general aspect, digital certificates are generated. In some aspects, a method includes accessing a primary root certificate of a root certificate authority of a PKI system. The primary root certificate includes a first public key based on a first cryptosystem and a first signature generated with a private key that corresponds to the first public key. A secondary crypto-agile root certificate is generated. The secondary crypto-agile root certificate includes the first public key of the root certificate authority, a second public key of the root certificate authority that is based on a second cryptosystem, a second signature of the root certificate authority that is created with a second private key that corresponds to the second public key, and a third signature of the root certificate authority that is generated with the first private key. The secondary crypto-agile root certificate is propagated to subordinate entities in the PKI system.

Abstract: A dielectric composition, including: dielectric grains containing a main component represented by a composition formula [(CaxSr(1-x))O]m[(TiyHfzZr(1-y-z))O2] (m is more than 1.020); a grain boundary phase located between the dielectric grains; and segregation grains each containing at least Ca, Si, and O. A first segregation grain is defined as a segregation further containing Mn among the segregation grains each containing at least Ca, Si, and O, and a second segregation grain is defined as a segregation containing substantially no Mn among the segregation grains each containing at least Ca, Si, and O. N1/(N1+N2) is more than 0.23 and 1.00 or less, in which N1 is a number density of first segregation grains in a cross-section of the dielectric composition, and N2 is a number density of second segregation grains in the cross-section of the dielectric composition.

Abstract: An air conditioner includes: a heat pump cycle including a compressor, a heating part and a low-temperature side water-refrigerant heat exchanger; a heat medium circuit; and a blower. In the air conditioner, when a heating capability of the heating part is increased by using the heat generated by the heat generating part, a heating preparation control is executed, in which a refrigerant discharge capability of the compressor is set to be equal to or less than a predetermined reference discharge capability and a blowing capability of the blower is set to be equal to or less than a predetermined reference blowing capability, until an inlet-side heat medium temperature of the heat medium flowing into the heat medium passage of the low-temperature side water-refrigerant heat exchanger becomes equal to or higher than a target heat medium temperature.

Abstract: A semiconductor laser element includes a substrate and a semiconductor stack. The semiconductor stack includes an N-side semiconductor layer, an active layer, a P-side semiconductor layer, and a P-type contact layer. The semiconductor stack includes two end faces. Laser light resonates between the two end faces. The semiconductor stack includes: a ridge portion; and a bottom portion surrounding the ridge portion in a top view of the semiconductor stack. The ridge portion protrudes upward from the bottom portion, is spaced apart from the two end faces, and includes at least a portion of the P-type contact layer. A current injection window is provided only on the ridge portion out of a top face of the semiconductor stack, the current injection window being a region into which a current is injected. A distance from a top face of the active layer to the bottom portion is constant.

Abstract: A semiconductor device includes: a base of a first nitride semiconductor; a buffer layer of a second nitride semiconductor provided on or above the base; a channel layer of a third nitride semiconductor provided on or above the buffer layer and having an opening portion; a barrier layer of a fourth nitride semiconductor provided on or above the channel layer; and an electrically conductive contact layer of a fifth nitride semiconductor provided in the opening portion and in contact with the buffer layer and the channel layer. A ratio of Al in a composition of the second nitride semiconductor is higher than or equal to that of the third nitride semiconductor. A ratio of Al in a composition of the first nitride semiconductor and a ratio of Al in a composition of the fourth nitride semiconductor are higher than that of the second nitride semiconductor.

Abstract: A movable elongated structure includes a distal end side tube, a base end side tube, traction wires, and a wiring aid routed by the traction wires arranged between the distal end side tube and the base end side tube, wherein the wiring aid guides the pair of traction wires from a pair of base end side wire lumens provided in the base end side tube to be introduced into a pair of distal end side wire lumens provided in the distal end side tube.

Abstract: A semiconductor device includes an underlayer made of a first nitride semiconductor, a first buffer layer made of a second nitride semiconductor, provided on the underlayer, and subjected to compressive stress from the underlayer in an in-plane direction which is perpendicular to a thickness direction of the underlayer, a second buffer layer made of a third nitride semiconductor, provided on the first buffer layer, and subjected to compressive stress from the first buffer layer in the in-plane direction, a channel layer made of a fourth nitride semiconductor, provided on the second buffer layer, and subjected to compressive stress from the second buffer layer in the in-plane direction, and a barrier layer made of a fifth nitride semiconductor, and provided above the channel layer.

Abstract: An end face polishing device for optical fiber ferrule for polishing an end face of an optical fiber ferrule by applying a polishing pressure between a polishing plate driven by a polishing drive shaft and an optical fiber ferrule held by a holding portion. The end face polishing device has: a bearing portion for allowing the polishing plate to rotate relatively around the polishing drive shaft and to move relatively to the polishing drive shaft in an axial direction; a polishing plate guide supporting portion for movably supporting the polishing plate on a base portion to apply the polishing pressure to the holding portion by allowing the polishing plate to move in the axial direction; a pressing drive source for outputting a driving force to apply the polishing pressure; and a pressing force transmission mechanism for transmitting the driving force output from the pressing drive source as a pressing force in the axial movement direction of the polishing plate.

Abstract: An elevator system, having: an elevator car, the elevator car including: a front end that includes a front doorway; an aft end that includes an aft doorway; and a cabin extending from the front end to the aft end; and a divider system operationally coupled to the elevator car within the cabin, intermediate the front and aft ends, that is operational to transition between: a retracted state, where the cabin is undivided; and a deployed state where the divider system divides the cabin into a front zone that is accessible by the front doorway and an aft zone that is accessible by the aft doorway.

Abstract: A circuit device includes an N-type well on a P-type substrate, a P-type well provided in the N-type well, a circuit element provided in the P-type well, a P-type well provided in an N-type well, and a circuit element provided in the P-type well. A ground power supply voltage is supplied to a P-type well. A power supply voltage different from the ground power supply voltage is supplied to a P-type well. The ground power supply voltage or a first potential that is greater than or equal to the potential of the ground power supply voltage and less than the potential of a high potential-side power supply voltage is supplied to an N-type well.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a second layer in contact with the second electrodes of the semiconductor element and a first layer located on a side opposite to the second electrodes, an average crystal grain size of crystals included in the second layer is larger than an average crystal grain size of crystals included in the first layer, and the first layer is spaced apart from the second electrodes of the semiconductor element.

Abstract: A method is provided that includes receiving, at a hot folder that processes print job files according to default print instructions associated with the hot folder, a submitted file selected from (a) a submitted print job file or (b) a submitted print ticket, where the submitted print ticket includes at least one submitted print instruction. The method further includes starting a delay timer upon receiving the submitted file, waiting to process the submitted file until the delay timer has expired, and, upon expiration of the delay timer, processing the submitted file. Also described are a non-transitory computer-readable medium and a printing device.