Abstract: A novel class of volatile liquid precursors based on amino substituted disilane compounds is used to form silicon nitride dielectric materials on the surface of substrates. This class of precursors overcomes the issues of high deposition temperatures and the formation of undesirable by-products that are inherent in the present art. In another aspect, methods of depositing silicon nitride films on substrates are provided.

Abstract: A method for energy-assisted atomic layer deposition and removal of a dielectric film are provided. In one embodiment a substrate is placed into a reaction chamber and a gaseous precursor is introduced into the reaction chamber. Energy is provide by a pulse of electromagnetic radiation which forms radical species of the gaseous precursor. The radical species react with the surface of the substrate to form a radical terminated surface on the substrate. The reaction chamber is purged and a second gaseous precursor is introduced. A second electromagnetic radiation pulse is initiated and forms second radical species. The second radical species of the second gas react with the surface to form a film on the substrate. Alternately, the gaseous species can be chosen to produce radicals that result in the removal of material from the surface of the substrate.