Patents by Inventor Audrey Berthelot
Audrey Berthelot has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230348262Abstract: The present description concerns a method of manufacturing a microelectromechanical device, including the following successive steps: providing an SOI structure comprising a first semiconductor layer on an insulating layer; forming a second semiconductor layer by epitaxy on top of and in contact with the upper surface of the first semiconductor layer; transferring and bonding, by molecular bonding, a third semiconductor layer onto and in contact with the upper surface of the second semiconductor layer; and forming trenches vertically extending from the upper surface of the third semiconductor layer all the way to the upper surface of the insulating layer, said trenches laterally delimiting a mechanical element of the device.Type: ApplicationFiled: April 27, 2023Publication date: November 2, 2023Applicant: Commissariat à l'Énergie Atomique et aux Énergies AlternativesInventors: Audrey Berthelot, Philippe Robert
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Patent number: 11538718Abstract: Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.Type: GrantFiled: December 17, 2018Date of Patent: December 27, 2022Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SAFRANInventors: Mikaël Colin, Audrey Berthelot
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Patent number: 11459227Abstract: Disclosed is a hinged MEMS and/or NEMS device with out-of-plane movement including a first portion and a second portion that is hinged so as to be able to rotate with respect to the first portion about an axis of rotation contained in a first mean plane of the device. The device also includes a hinging element that connects the first portion and the second portion and that is stressed flexurally and a sensing element that extends between the first portion and the second portion and that deforms during the movement of the second portion. Finally, the device includes two blades that extend perpendicularly to the mean plane of the hinge device and parallel to the axis of rotation, the blades being placed between the hinging element and the sensing element and connecting the first portion and the second portion and being stressed torsionally during the movement of the second portion.Type: GrantFiled: November 9, 2017Date of Patent: October 4, 2022Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Loic Joet, Audrey Berthelot
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Patent number: 11312618Abstract: A microdevice (100) comprising a movable element (111) capable of moving relative to a fixed part (115), produced in first and second layers of material (104, 106) arranged one above the other such that the movable element comprises a portion (112) of the first layer and a portion (118) of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure (121) formed in the first and/or second layer of material.Type: GrantFiled: March 14, 2018Date of Patent: April 26, 2022Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES SAFRANInventors: Audrey Berthelot, Mikaël Colin, Alain Jeanroy, Guillaume Lehee, Olivier Vancauwenberghe, Philippe Onfroy, Jean-Sébastien Mace
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Publication number: 20210130158Abstract: A microdevice (100) comprising a movable element (111) capable of moving relative to a fixed part (115), produced in first and second layers of material (104, 106) arranged one above the other such that the movable element comprises a portion (112) of the first layer and a portion (118) of the second layer secured to each other, and wherein the movable element is suspended from the fixed part by a suspension structure (121) formed in the first and/or second layer of material.Type: ApplicationFiled: March 14, 2018Publication date: May 6, 2021Inventors: Audrey Berthelot, Mikaël Colin, Alain Jeanroy, Guillaume Lehee, Olivier Vancauwenberghe, Philippe Onfroy, Jean-Sébastien Mace
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Publication number: 20210114865Abstract: Disclosed is a hinged MEMS and/or NEMS device with out-of-plane movement including a first portion and a second portion that is hinged so as to be able to rotate with respect to the first portion about an axis of rotation contained in a first mean plane of the device. The device also includes a hinging element that connects the first portion and the second portion and that is stressed flexurally and a sensing element that extends between the first portion and the second portion and that deforms during the movement of the second portion. Finally, the device includes two blades that extend perpendicularly to the mean plane of the hinge device and parallel to the axis of rotation, the blades being placed between the hinging element and the sensing element and connecting the first portion and the second portion and being stressed torsionally during the movement of the second portion.Type: ApplicationFiled: November 9, 2017Publication date: April 22, 2021Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Loic JOET, Audrey BERTHELOT
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Publication number: 20210082762Abstract: Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.Type: ApplicationFiled: December 17, 2018Publication date: March 18, 2021Inventors: Mikaël Colin, Audrey Berthelot
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Patent number: 10472227Abstract: A micro-device comprising: a substrate, a stationary element rigidly connected to the substrate, a first mobile element suspended from the stationary element by first retention elements and configured to move with respect to the stationary element, a second mobile element suspended from the first mobile element by second retention elements and configured to move with respect to the first mobile element and the stationary element, a first cavity, at least some of the walls of which are formed by the stationary element and in which the first mobile element is encapsulated, a second cavity positioned in the first cavity, at least some of the walls of which are formed by the first mobile element, in which the second mobile element is encapsulated and which is insulated from the first cavity.Type: GrantFiled: March 12, 2018Date of Patent: November 12, 2019Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SAFRANInventors: Audrey Berthelot, Mikael Colin
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Publication number: 20180265348Abstract: A micro-device comprising: a substrate, a stationary element rigidly connected to the substrate, a first mobile element suspended from the stationary element by first retention elements and configured to move with respect to the stationary element, a second mobile element suspended from the first mobile element by second retention elements and configured to move with respect to the first mobile element and the stationary element, a first cavity, at least some of the walls of which are formed by the stationary element and in which the first mobile element is encapsulated, a second cavity positioned in the first cavity, at least some of the walls of which are formed by the first mobile element, in which the second mobile element is encapsulated and which is insulated from the first cavity.Type: ApplicationFiled: March 12, 2018Publication date: September 20, 2018Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Audrey Berthelot, Mikael Colin
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Patent number: 9802817Abstract: Method for making a N/MEMS device including a structure provided with an active part having a first suspended element and a second suspended element with different thicknesses, the method comprising the following steps of: forming, in a first substrate (100), a sacrificial zone (105), transferring a given layer onto the sacrificial zone, defining in said given layer a first suspended element facing the first sacrificial zone, defining a second suspended element in the first substrate and said given layer, releasing at least the first suspended element.Type: GrantFiled: May 8, 2015Date of Patent: October 31, 2017Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventor: Audrey Berthelot
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Patent number: 9783407Abstract: A microsystem and/or nanosystem type device is disclosed, comprising: a first substrate, or intermediate substrate, comprising a mobile part, a second substrate or support substrate, at least one lower electrode, and one dielectric layer (101) located between the first and second substrates, the dielectric layer being arranged between the lower electrode and the first substrate; the first substrate comprising through vias filled with conducting material in contact with said lower electrode.Type: GrantFiled: July 11, 2012Date of Patent: October 10, 2017Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Sophie Giroud, Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Hélène Vaudaine
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Publication number: 20150353350Abstract: Method for making a N/MEMS device including a structure provided with an active part having a first suspended element and a second suspended element with different thicknesses, the method comprising the following steps of: forming, in a first substrate (100), a sacrificial zone (105), transferring a given layer onto the sacrificial zone, defining in said given layer a first suspended element facing the first sacrificial zone, defining a second suspended element in the first substrate and said given layer, releasing at least the first suspended element.Type: ApplicationFiled: May 8, 2015Publication date: December 10, 2015Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventor: Audrey BERTHELOT
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Patent number: 8999860Abstract: The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).Type: GrantFiled: December 19, 2013Date of Patent: April 7, 2015Assignee: Commissariat a l'energie Atomique et aux Energies AlternativesInventors: Vincent Larrey, Laurent Vandroux, Audrey Berthelot, Marie-Helene Vaudaine
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Patent number: 8865564Abstract: A process is provided for producing at least one interconnecting well to achieve a conductive pathway between at least two connection layers of a component comprising a stack of at least one first substrate and one second substrate which are electrically insulated from one another, the process including defining a surface contact region of a surface connection layer over a surface of the stack and of at least one first contact region embedded in the stack starting from a first embedded connection layer of the first substrate. A region devoid of material is positioned between the first substrate and second substrates and which comprises a stage of producing a interconnecting well which passes through the second substrate and extends between the surface contact region and the first embedded contact region and passes through the region devoid of material, and also a first layer which covers the first embedded connection layer.Type: GrantFiled: March 7, 2012Date of Patent: October 21, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Audrey Berthelot, Jean-Philippe Polizzi
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Publication number: 20140179089Abstract: The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).Type: ApplicationFiled: December 19, 2013Publication date: June 26, 2014Inventors: Vincent Larrey, Laurent Vandroux, Audrey Berthelot, Marie-Helene Vaudaine
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Patent number: 8692337Abstract: A device being a micro-system and/or a nano-system which includes a first substrate, having at least one lower electrode and at least one dielectric layer, and includes an intermediate substrate extending across a main plane of the device and including a moving portion. The intermediate substrate is attached, outside the moving portion, by molecular bonding to the first substrate. The moving portion faces at least a portion of the lower electrode. The device also includes an upper substrate, attached to the intermediate substrate. The moving portion is movable between the lower electrode and the upper substrate. The first, intermediate, and upper substrates extend in a plane parallel to the main plane of the device. The lower electrode detects a component of the movement of the moving portion perpendicular to the plane of the device.Type: GrantFiled: July 11, 2012Date of Patent: April 8, 2014Assignees: Commissariat a l'energie atomique et aux energies alternatives, FREESCALE Semiconductor IncInventors: Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Hélène Vaudaine, Hemant Desai, Woo Tae Park
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Patent number: 8580597Abstract: A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.Type: GrantFiled: March 26, 2010Date of Patent: November 12, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Eric Ollier, Audrey Berthelot
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Publication number: 20130181302Abstract: A microsystem and/or nanosystem type device is disclosed, comprising: a first substrate, or intermediate substrate, comprising a mobile part, a second substrate or support substrate, at least one lower electrode, and one dielectric layer (101) located between the first and second substrates, the dielectric layer being arranged between the lower electrode and the first substrate; the first substrate comprising through vias filled with conducting material in contact with said lower electrode.Type: ApplicationFiled: July 11, 2012Publication date: July 18, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Sophie Giroud, Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Hélène Vaudaine
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Publication number: 20130175643Abstract: A device is described of the micro-system and/or nano-system type including: a first substrate, including at least one electrode, called the lower electrode, and at least one dielectric layer, an intermediate substrate, extending across a plane, called the main plane of the device, including a moving portion, an upper substrate, attached to the intermediate substrate, where the said moving portion can be made to move between the lower electrode and the upper substrate.Type: ApplicationFiled: July 11, 2012Publication date: July 11, 2013Applicants: FREESCALE SEMICONDUCTOR, Inc., COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Audrey Berthelot, Vincent Larrey, Jean-Philippe Polizzi, Marie-Helene Vaudaine, Hemant Desai, Woo Tae Park
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Publication number: 20120009713Abstract: A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.Type: ApplicationFiled: March 26, 2010Publication date: January 12, 2012Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Eric Ollier, Audrey Berthelot