Patents by Inventor Avi Rozenblat

Avi Rozenblat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structures having adhesion promoting layer in cavities
    Patent number: 9159662
    Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close of the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.
    Type: Grant
    Filed: June 19, 2014
    Date of Patent: October 13, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Shai Haimson, Avi Rozenblat, Dror Horvitz, Maor Rotlain, Rotem Drori
  • FILLING CAVITIES IN SEMICONDUCTOR STRUCTURES HAVING ADHESION PROMOTING LAYER IN THE CAVITIES
    Publication number: 20140299992
    Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close of the trench at the top during filling may be reduced in sonic embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.
    Type: Application
    Filed: June 19, 2014
    Publication date: October 9, 2014
    Inventors: Shai Haimson, Avi Rozenblat, Dror Horvitz, Maor Rotlain, Rotem Drori
  • Filling cavities in semiconductor structures having adhesion promoting layer in the cavities
    Patent number: 8772155
    Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: July 8, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Shai Haimson, Avi Rozenblat, Dror Horvitz, Maor Rotlain, Rotem Drori
  • Filling Cavities in Semiconductor Structures
    Publication number: 20120126415
    Abstract: High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during filling may be reduced in some embodiments. Material that encourages the growth of metal may be formed in the trench at the bottom, while leaving the region of the trench near the top free of such material to encourage growth upwardly from the bottom.
    Type: Application
    Filed: November 18, 2010
    Publication date: May 24, 2012
    Inventors: Shai Haimson, Avi Rozenblat, Dror Horvitz, Maor Rotlain, Rotem Drori