Patents by Inventor Avinash Gupta
Avinash Gupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11989820Abstract: Techniques for generating an image are disclosed. In some embodiments, a received input image is transformed to generate an output image using a machine learning based framework that is trained on a constrained set of images. The generated output image comprises an attribute learned by the machine learning based framework from the set of images.Type: GrantFiled: November 5, 2020Date of Patent: May 21, 2024Assignee: Outward, Inc.Inventors: Clarence Chui, Manu Parmar, Amogh Subbakrishna Adishesha, Harshul Gupta, Avinash Venkata Uppuluri
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Patent number: 11989821Abstract: A machine learning based image processing and generation framework is disclosed. In some embodiments, depth values of an object or asset in a received input image are at least in part determined using a machine learning based framework that is constrained to a known prescribed environment. Determined depth values facilitate generation of other views of the object or asset.Type: GrantFiled: November 5, 2020Date of Patent: May 21, 2024Assignee: Outward, Inc.Inventors: Clarence Chui, Manu Parmar, Amogh Subbakrishna Adishesha, Harshul Gupta, Avinash Venkata Uppuluri
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Publication number: 20240150931Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.Type: ApplicationFiled: January 17, 2024Publication date: May 9, 2024Inventors: Xueping XU, Iiya ZWIEBACK, Avinash GUPTA, Varatharajan RENGARAJAN
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Publication number: 20240086844Abstract: Methods and systems disclosed herein describe a canonical model that sets forth a standardized schema that represents data entities and their relationships as a logical data structure across multiple business units. A schema validator module may validate application-specific schema against the canonical module. Additionally, legacy and/or existing applications may be upgraded, through a transformation module, to comply with the canonical model. The transformation module may transform application-specific data and/or information to the standardized schema, and vice versa, to ensure that legacy and/or existing applications may communicate with applications and/or processing engines that comply with the standardized schema.Type: ApplicationFiled: October 15, 2020Publication date: March 14, 2024Inventors: Kevin Yang, Hruday Kamble, Avinash Gupta
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Patent number: 11905618Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.Type: GrantFiled: March 5, 2021Date of Patent: February 20, 2024Assignee: II-VI ADVANCED MATERIALS, LLCInventors: Xueping Xu, Ilya Zwieback, Avinash Gupta, Varatharajan Rengarajan
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Patent number: 11761117Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.Type: GrantFiled: September 15, 2021Date of Patent: September 19, 2023Assignee: II-VI DELAWARE, INC.Inventors: Avinash Gupta, Ilya Zwieback, Edward Semenas, Marcus Getkin, Patrick Flynn
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Publication number: 20230051225Abstract: Described are a system, method, and computer program product for segmenting a plurality of accounts. The method includes processing transaction data for a plurality of transactions conducted by a plurality of accounts using a plurality of account identifiers, the transaction data for each transaction including data identifying the transaction as an electronic transaction or a physical transaction, segmenting the plurality of accounts into at least two groups including an active customer group and an inactive customer group based on the transaction data for each transaction conducted by each of the plurality of accounts, determining a third subset of customers from the second subset of customers based on at least one predicative model and a transaction profile of each customer of the second subset of customers, and automatically enrolling the third subset of customers into an automated campaign.Type: ApplicationFiled: August 10, 2021Publication date: February 16, 2023Inventors: Manoj Sreekumaran Nair, Sunali Sood, Avinash Gupta, Dmytro Dovgan, Ghanashyama Mahanty
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Publication number: 20230024711Abstract: Methods and systems disclosed herein describe a universal access layer that allows a plurality of applications to obtain data and/or information from a plurality of heterogeneous data stores. The universal access layer may include one or more application data objects to validate requests, transform a format of the request, determine which data stores comprise the requested data and/or information, encrypt the request, combine responses into a single response, and retransform the response prior to sending it to the requesting application. By using the universal access layer, applications may improve the speed with which they access data and/or information from the plurality of heterogeneous data stores.Type: ApplicationFiled: October 3, 2022Publication date: January 26, 2023Inventors: Kevin Yang, Hruday Kamble, Avinash Gupta
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Patent number: 11461488Abstract: Methods and systems disclosed herein describe a universal access layer that allows a plurality of applications to obtain data and/or information from a plurality of heterogeneous data stores. The universal access layer may include one or more application data objects to validate requests, transform a format of the request, determine which data stores comprise the requested data and/or information, encrypt the request, combine responses into a single response, and retransform the response prior to sending it to the requesting application. By using the universal access layer, applications may improve the speed with which they access data and/or information from the plurality of heterogeneous data stores.Type: GrantFiled: April 2, 2020Date of Patent: October 4, 2022Assignee: Allstate Insurance CompanyInventors: Kevin Yang, Hruday Kamble, Avinash Gupta
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Publication number: 20220002906Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.Type: ApplicationFiled: September 15, 2021Publication date: January 6, 2022Inventors: Avinash Gupta, Ilya Zwieback, Edward Semenas, Marcus Getkin, Patrick Flynn
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Patent number: 11149359Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.Type: GrantFiled: March 29, 2019Date of Patent: October 19, 2021Assignee: II-VI DELAWARE, INC.Inventors: Avinash Gupta, Ilya Zwieback, Edward Semenas, Marcus Getkin, Patrick Flynn
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Publication number: 20210312065Abstract: Methods and systems disclosed herein describe a universal access layer that allows a plurality of applications to obtain data and/or information from a plurality of heterogeneous data stores. The universal access layer may include one or more application data objects to validate requests, transform a format of the request, determine which data stores comprise the requested data and/or information, encrypt the request, combine responses into a single response, and retransform the response prior to sending it to the requesting application. By using the universal access layer, applications may improve the speed with which they access data and/or information from the plurality of heterogeneous data stores.Type: ApplicationFiled: April 2, 2020Publication date: October 7, 2021Inventors: Kevin Yang, Hruday Kamble, Avinash Gupta
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Publication number: 20210217095Abstract: Methods and systems disclosed herein describe deploying a plurality of microservices to calculate an insurance rate. The plurality of microservices may operate in parallel to calculate a plurality of partial rates that are combined (e.g., added up) to determine the insurance rate. During the calculating steps, one or more rating factors may be cached and/or stored. The plurality of microservices may reduce the time and/or resources required by a processor to calculate an insurance rate, while the stored rating factors may be displayed to the user to provide greater transparency into how the insurance rate was calculated.Type: ApplicationFiled: February 11, 2020Publication date: July 15, 2021Inventors: Kevin Yang, Hruday Kamble, Avinash Gupta
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Publication number: 20210201372Abstract: A method, system, and apparatus for segmenting users based on transaction activity and propensity for conducting portable financial device transactions. The method includes: determining a subset of transaction data categories from a plurality of transaction data categories; ranking the subset of transaction data categories into at least one order; generating a predictive model for determining user propensity for prospectively increasing a frequency of portable financial device transactions based at least partially on the ranking of the at least one subset of transaction data categories; analyzing transaction data for portable financial device transactions initiated by each user of a plurality of users; generating at least one subset of users of the plurality of users; and automatically initiating a conversion action.Type: ApplicationFiled: March 13, 2017Publication date: July 1, 2021Inventors: Avinash Gupta, Ghanashyama Mahanty, Nadeem Uddin
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Publication number: 20210189591Abstract: In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.Type: ApplicationFiled: March 5, 2021Publication date: June 24, 2021Inventors: Xueping Xu, Iilya Zwieback, Avinash Gupta, Varatharajan Rengarajan
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Patent number: 10793972Abstract: A physical vapor transport (PVT) apparatus suitable for growing SiC boules comprises a crystal growth chamber (with a defined central vertical axis), a sealed crucible containing sublimation source material and including a seed fixture disposed in an offset position with respect to the central vertical axis of the apparatus, and a heat source disposed to surround the crystal growth chamber. The heat source is configured to raise the temperature within the sealed crucible such that the source material vaporizes and deposits on the seed wafer. The offset position of the seed fixture creates a radial temperature gradient across an exposed surface of the seed as the crystal boule is grown.Type: GrantFiled: July 10, 2018Date of Patent: October 6, 2020Assignee: II-VI Delaware, Inc.Inventors: Xueping Xu, Avinash Gupta, Mark Ramm, Ilya Zwieback, Varatharajan Rengarajan, Gary E. Ruland
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Patent number: 9873839Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.Type: GrantFiled: August 5, 2016Date of Patent: January 23, 2018Assignee: Lummus Technology Inc.Inventors: Mario C. Baldassari, Ujjal K. Mukherjee, Avinash Gupta
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Patent number: 9523048Abstract: A hydroconversion process is disclosed, including contacting of hydrogen and a residuum hydrocarbon with a pre-conditioned and at least partially sulfided hydroconversion catalyst for converting at least a portion of the residuum hydrocarbon into at least one of a hydrotreated product and a hydrocracked product.Type: GrantFiled: July 24, 2009Date of Patent: December 20, 2016Assignee: Lummus Technology Inc.Inventors: Avinash Gupta, Mario C. Baldassari, Ujjal K. Mukherjee
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Publication number: 20160340597Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.Type: ApplicationFiled: August 5, 2016Publication date: November 24, 2016Applicant: Lummus Technology Inc.Inventors: Mario C. Baldassari, Ujjal K. Mukherjee, Avinash Gupta
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Patent number: 9441174Abstract: Processes for upgrading resid hydrocarbon feeds are disclosed. The upgrading processes may include: hydrocracking a resid in a first reaction stage to form a first stage effluent; hydrocracking a deasphalted oil fraction in a second reaction stage to form a second stage effluent; fractionating the first stage effluent and the second stage effluent to recover at least one distillate hydrocarbon fraction and a resid hydrocarbon fraction; feeding the resid hydrocarbon fraction to a solvent deasphalting unit to provide an asphaltene fraction and the deasphalted oil fraction.Type: GrantFiled: June 7, 2012Date of Patent: September 13, 2016Assignee: Lummus Technology Inc.Inventors: Mario C. Baldassari, Ujjal K. Mukherjee, Avinash Gupta