Abstract: The present invention discloses a healthcare administration system useful for the management of anamnesis and medical records, data analysis, guided diagnosis, medical treatment, and clinical investigation. The novel system comprising: a plurality of self-sufficient subsystems adapted to record, store, share, clinically investigate and analyze information by means of a common medical information protocol (CMIP); at least one end-unit device adapted to diagnose and/or treat patients, in communication with a subsystem for controlling, monitoring and recording the treatment process and its outcome by means of a medical protocol; at least one module adapted for a CMIP. The end-unit device is guided by the CMIP so that anamnesis, diagnosis and targeted treatment is dictated, provided, monitored, recorded and/or clinically investigated.

Abstract: The present invention discloses a system (1) for administering medical therapy by means of directing energy radiation onto a patient's body. The novel system comprising the following: an assembly for directing said energy in a predetermined measure comprising a means for emitting energy to be directed toward the patient's body, and communications means, a treatment protocol defining a set of parameters according to which the emitted energy is to be delivered, such parameters including predetermined points on the patient's body whereat the energy is to be directed and a system for controlling the emitted radiation according to the protocol. The present invention also discloses a method for administration of laser acupuncture by means of a medical device comprising an emitter of photonic radiation directed to an acupuncture point and an imaging sensor for monitoring and controlling the treatment.

Abstract: The present invention is generally directed to a system and process for accurately determining the temperature of an object, such as a semiconductive wafer, by sampling from the object radiation being emitted at a particular wavelength. In particular, a reflective device is placed adjacent to the radiating object. The reflective device includes areas of high reflectivity and areas of low reflectivity. The radiation being emitted by the object is sampled within both locations generating two different sets of radiation measurements. The measurements are then analyzed and a correction factor is computed based on the optical characteristics of the reflective device and the optical characteristics of the wafer. The correction factor is then used to more accurately determine the temperature of the wafer. Through this method, the emissivity of the wafer has only a minor influence on the calculated temperature.