Patents by Inventor Axel Zibold
Axel Zibold has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8730474Abstract: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.Type: GrantFiled: March 19, 2009Date of Patent: May 20, 2014Assignee: Carl Zeiss SMS GmbHInventors: Thomas Scheruebl, Holger Seitz, Ulrich Matejka, Axel Zibold, Rigo Richter
-
Patent number: 8705838Abstract: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.Type: GrantFiled: February 4, 2006Date of Patent: April 22, 2014Assignees: Carl Zeiss SMS GmbH, Synopsys, Inc.Inventors: Klaus Boehm, Christian Kalus, Thomas Schmoeller, Wolfgang Harnisch, Axel Zibold
-
Patent number: 8268516Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion.Type: GrantFiled: November 14, 2008Date of Patent: September 18, 2012Assignee: Carl Zeiss SMS GmbHInventors: Axel Zibold, Peter Kuschnerus, Oliver Kienzle
-
Patent number: 7916930Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.Type: GrantFiled: September 14, 2007Date of Patent: March 29, 2011Assignee: Carl Zeiss SMS GmbHInventors: Axel Zibold, Wolfgang Harnisch, Oliver Kienzle
-
Publication number: 20110016437Abstract: The invention relates to a method and an apparatus for measuring masks for photolithography. In this case, structures to be measured on the mask on a movable mask carrier are illuminated and imaged as an aerial image onto a detector, the illumination being set in a manner corresponding to the illumination in a photolithography scanner during a wafer exposure. A selection of positions at which the structures to be measured are situated on the mask is predetermined, and the positions on the mask in the selection are successively brought to the focus of an imaging optical system, where they are illuminated and in each case imaged as a magnified aerial image onto a detector, and the aerial images are subsequently stored. The structure properties of the structures are then analyzed by means of predetermined evaluation algorithms. The accuracy of the setting of the positions and of the determination of structure properties is increased in this case.Type: ApplicationFiled: March 19, 2009Publication date: January 20, 2011Inventors: Thomas Scherübl, Holger Seitz, Ulrich Strössner, Axel Zibold, Rigo Richter
-
Publication number: 20100266937Abstract: The invention relates to a method for repairing phase shift masks for photolithography in which a phase shift mask is checked for the presence of defects and, if defects are present, (i) an analysis is conducted as to which of the defects negatively affect imaging properties of the phase shift mask, (ii) said defects are improved, (iii) the imaging properties of the improved phase shift mask are analyzed and the maintenance of a predetermined tolerance criterion is checked, and (iv) the two preceding steps (ii) and (iii) are optionally repeated multiple times if the imaging properties do not meet the predetermined tolerance criterion.Type: ApplicationFiled: November 14, 2008Publication date: October 21, 2010Applicant: CARL ZEISS SMS GMBHInventors: Axel Zibold, Peter Kuschnerus, Oliver Kienzle
-
Patent number: 7623620Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength <100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.Type: GrantFiled: November 8, 2004Date of Patent: November 24, 2009Assignee: Carl Zeiss SMT AGInventors: Hans-Jürgen Mann, Udo Dinger, Wilhelm Ulrich, Wolfgang Reinecke, Thomas Engel, Axel Zibold, Wolfgang Harnisch, Marco Wedowski, Dieter Pauschinger
-
Publication number: 20080247632Abstract: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.Type: ApplicationFiled: February 4, 2006Publication date: October 9, 2008Inventors: Klaus Boehm, Christian Kalus, Thomas Schmoeller, Wolfgang Harnisch, Axel Zibold
-
Publication number: 20080069431Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.Type: ApplicationFiled: September 14, 2007Publication date: March 20, 2008Inventors: Axel Zibold, Wolfgang Harnisch, Oliver Kienzle
-
Publication number: 20060291031Abstract: An arrangement making use of two-dimensional arrays consisting of individually controllable elements, for forming aperture diaphragms in the beam paths of optical devices. In an arrangement of diaphragm apertures and/or filters, in which the form, position and/or optical characteristics can be changed, for use in optical devices, at least one two-dimensional array, consisting of individually controllable elements, is arranged for forming the diaphragm apertures and/or filters in the optical imaging and/or illumination beam paths and is connected with a control unit for controlling the individual elements In this way, the geometry, the optical characteristics and/or the position of the aperture diaphragms and/or the filters can be controlled very quickly. These changes can also be made “online” during the process of measurement or adjustment in the sense of optical fine tuning.Type: ApplicationFiled: May 8, 2006Publication date: December 28, 2006Inventors: Klaus Boehm, Peter Schaeffer, Wolfgang Harnisch, Thomas Engel, Axel Zibold, Bernd Geh
-
Publication number: 20060154150Abstract: An arrangement and a method for the production of photomasks in which at least one defect control system is connected to at least one repair system by a stationary data connection or online connection, and the defect control system and repair system are connected to one another by data in such a way that the results obtained on one of the systems are immediately available to the other system for further processing. The defect control system conveys detected defects to the repair system via a data connection for data exchange. An AIMS system is advantageously provided as defect control system and an electron beam system is advantageously provided for defect control.Type: ApplicationFiled: July 9, 2003Publication date: July 13, 2006Inventors: Thomas Engel, Wolfgang Harnisch, Peter Hoffrogge, Axel Zibold
-
Publication number: 20050201514Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength <100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.Type: ApplicationFiled: November 8, 2004Publication date: September 15, 2005Inventors: Hans-Jurgen Mann, Udo Dinger, Wilhelm Ulrich, Wolfgang Reinecke, Thomas Engel, Axel Zibold, Wolfgang Harnisch, Marco Wedowski, Dieter Pauschinger