Patents by Inventor Ayako Mizuno
Ayako Mizuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10962519Abstract: An analysis pretreatment device according to an embodiment includes a chamber capable of containing an analysis object therein. A pressure reducer reduces pressure inside the chamber. An introducing part vaporizes a liquid and introduces the vaporized liquid into the chamber. A first supplier supplies water in a liquid state to the introducing part. A second supplier supplies hydrofluoric acid in a gas state to the introducing part. The introducing part introduces a mixed gas into the chamber. The mixed gas includes vaporized water, which is obtained by vaporizing water in a liquid state, and hydrofluoric acid in a gas state.Type: GrantFiled: March 10, 2016Date of Patent: March 30, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Jiahong Wu, Ayako Mizuno, Yuji Yamada
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Patent number: 9658203Abstract: A metal collection solution according to an embodiment contains 48 wt % or more of HNO3, 6 wt % or less of HCl, and 5 wt % or less of HF. The metal collection solution can collect noble metals and can scan on a substrate. The metal collection solution can be used to collect the noble metals adhered to a surface of the substrate.Type: GrantFiled: August 6, 2015Date of Patent: May 23, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Jiahong Wu, Yuji Yamada, Ayako Mizuno
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Publication number: 20170072378Abstract: An analysis pretreatment device according to an embodiment includes a chamber capable of containing an analysis object therein. A pressure reducer reduces pressure inside the chamber. An introducing part vaporizes a liquid and introduces the vaporized liquid into the chamber. A first supplier supplies water in a liquid state to the introducing part. A second supplier supplies hydrofluoric acid in a gas state to the introducing part. The introducing part introduces a mixed gas into the chamber. The mixed gas includes vaporized water, which is obtained by vaporizing water in a liquid state, and hydrofluoric acid in a gas state.Type: ApplicationFiled: March 10, 2016Publication date: March 16, 2017Inventors: Jiahong WU, Ayako MIZUNO, Yuji YAMADA
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Publication number: 20160209389Abstract: A metal collection solution according to an embodiment contains 48 wt % or more of HNO3, 6 wt % or less of HCl, and 5 wt % or less of HF. The metal collection solution can collect noble metals and can scan on a substrate. The metal collection solution can be used to collect the noble metals adhered to a surface of the substrate.Type: ApplicationFiled: August 6, 2015Publication date: July 21, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Jiahong WU, Yuji Yamada, Ayako Mizuno
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Patent number: 8771535Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.Type: GrantFiled: July 22, 2011Date of Patent: July 8, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yuji Yamada, Makiko Katano, Ayako Mizuno, Eri Uemura, Asuka Uchinuno, Chikashi Takeuchi
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Publication number: 20120149199Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.Type: ApplicationFiled: July 22, 2011Publication date: June 14, 2012Inventors: Yuji YAMADA, Makiko KATANO, Ayako MIZUNO, Eri UEMURA, Asuka UCHINUNO, Chikashi TAKEUCHI
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Publication number: 20110100393Abstract: The method of cleaning a mask of an embodiment includes irradiating a mask film having a mask pattern on a substrate with an energy radiation and heightening a temperature of the mask film than that of the substrate.Type: ApplicationFiled: September 14, 2010Publication date: May 5, 2011Inventors: Eri UEMURA, Makiko KATANO, Haruko AKUTSU, Shinji YAMAGUCHI, Kyo OTSUBO, Ayako MIZUNO
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Publication number: 20110053058Abstract: According to one embodiment, a semiconductor device fabrication mask comprises a light-transmitting substrate, and a semi-light-shielding pattern and a light-shielding pattern formed on portions of the light-transmitting substrate, wherein the concentration of an S-containing material is 0.4% or less within the range of a depth of 1 nm from the exposed surface of the light-transmitting substrate, the surface of the semi-light-shielding pattern, and the surface of the light-shielding pattern.Type: ApplicationFiled: August 30, 2010Publication date: March 3, 2011Inventors: Kyo OTSUBO, Makiko Katano, Haruko Akutsu, Ayako Mizuno
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Patent number: 7889313Abstract: An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.Type: GrantFiled: October 26, 2007Date of Patent: February 15, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Makiko Katano, Takuya Kono, Ayako Mizuno
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Patent number: 7850752Abstract: A semiconductor manufacturing system, having a filter that is disposed in a clean room and removes an organic solvent containing siloxane from a gas supplied from the outside of said clean room; a first semiconductor manufacturing apparatus that is disposed in said clean room and uses light in an atmosphere containing the gas having passed through said filter; a second semiconductor manufacturing apparatus that is disposed in said clean room and has an exhaust gas outlet for discharging a gas containing an organic solvent containing siloxane; and a removing device that is disposed at said exhaust gas outlet of said second semiconductor manufacturing apparatus, filters out the organic solvent containing siloxane from the exhaust gas output from said exhaust gas outlet, and discharges the filtered gas into an exhaust gas duct for discharging the exhaust gas to the outside of said clean room.Type: GrantFiled: January 22, 2008Date of Patent: December 14, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Ayako Mizuno, Hiroshi Tomita
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Publication number: 20080182429Abstract: A semiconductor manufacturing system, having a filter that is disposed in a clean room and removes an organic solvent containing siloxane from a gas supplied from the outside of said clean room; a first semiconductor manufacturing apparatus that is disposed in said clean room and uses light in an atmosphere containing the gas having passed through said filter; a second semiconductor manufacturing apparatus that is disposed in said clean room and has an exhaust gas outlet for discharging a gas containing an organic solvent containing siloxane; and a removing device that is disposed at said exhaust gas outlet of said second semiconductor manufacturing apparatus, filters out the organic solvent containing siloxane from the exhaust gas output from said exhaust gas outlet, and discharges the filtered gas into an exhaust gas duct for discharging the exhaust gas to the outside of said clean room.Type: ApplicationFiled: January 22, 2008Publication date: July 31, 2008Inventors: Ayako MIZUNO, Hiroshi Tomita
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Publication number: 20080106713Abstract: An immersion lithography apparatus includes: a projection optical system which projects a pattern of a mask onto a substrate; a substrate cleaning unit which cleans the substrate prior to projection of the pattern; a liquid supply mechanism which supplies the same liquid to an immersion region between the projection optical system and the substrate and to the substrate cleaning unit; a first liquid discharge path through which the liquid discharged from the immersion region is passed; and a second liquid discharge path through which the liquid discharged from the substrate cleaning unit is passed.Type: ApplicationFiled: October 26, 2007Publication date: May 8, 2008Inventors: Makiko Katano, Takuya Kono, Ayako Mizuno
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Publication number: 20070274814Abstract: A local clean robot-transport plant includes: a plurality of manufacturing apparatuses; a plurality of closed-type transport containers; a container discrimination/selection apparatus; an apparatus group control server. Each of the plurality of closed-type transport containers stores and transports an intermediate product of manufacturing processes along a plurality of interprocess transport paths defined among the plurality of manufacturing apparatuses in accordance with a flow of the manufacturing processes. The container discrimination/selection apparatus is configured to discriminate and select the closed-type transport container of transport type 1 and the closed-type transport container of transport type 2, respectively, from among the plurality of closed-type transport containers.Type: ApplicationFiled: May 4, 2007Publication date: November 29, 2007Inventors: Atsuko Kawasaki, Masahiro Kiyotoshi, Shoko Ito, Makiko Katano, Ayako Mizuno
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Patent number: 6284020Abstract: A method of maintaining cleanliness of substrates including a first step for accommodating at least a piece of substrate having a gaseous impurity-trapping filter arranged close thereto in a hermetically sealed box, and a second step for circulating the atmosphere in the box at a rate of two or more times a minute so that impurities in the atmosphere are adsorbed by the gaseous impurity-trapping filter. A box for accommodating substrates includes a housing in which space for accommodating the substrates is hermetically closed with a lid, a gaseous impurity-trapping filter arranged in the housing and adapted to adsorb impurities contained in the atmosphere in space, and an atmosphere-circulating device having a ratio of the circulating capacity to the space volume of not smaller than 2 in order to circulate the atmosphere so as to pass it through the gaseous impurity-trapping filter.Type: GrantFiled: June 2, 2000Date of Patent: September 4, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Ayako Mizuno, Makiko Katano, Katsuya Okumura