Patents by Inventor Babak Sadigh
Babak Sadigh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11993860Abstract: A method includes at least partially submerging a substrate in a colloidal mixture of nanocrystals and a first solvent. The nanocrystals have first ligands coupled thereto. The method also includes applying an electric field to the colloidal mixture to form a solvated nanocrystal film and removing the solvated nanocrystal film from the first solvent. The method further includes applying a second solvent to the solvated nanocrystal film for ligand exchange. The second solvent comprises second ligands. A nanocrystal film product formed by one-step ligand exchange includes at least one dimension greater than 100 nm and ordered nanocrystals characterized as having a domain size of greater than 100 nm.Type: GrantFiled: January 28, 2022Date of Patent: May 28, 2024Assignee: Lawrence Livermore National Security, LLCInventors: Xiaojie Xu, Kyoung Eun Kweon, Christine A. Orme, Babak Sadigh, April Sawvel
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Publication number: 20220243352Abstract: A method includes at least partially submerging a substrate in a colloidal mixture of nanocrystals and a first solvent. The nanocrystals have first ligands coupled thereto. The method also includes applying an electric field to the colloidal mixture to form a solvated nanocrystal film and removing the solvated nanocrystal film from the first solvent. The method further includes applying a second solvent to the solvated nanocrystal film for ligand exchange. The second solvent comprises second ligands. A nanocrystal film product formed by one-step ligand exchange includes at least one dimension greater than 100 nm and ordered nanocrystals characterized as having a domain size of greater than 100 nm.Type: ApplicationFiled: January 28, 2022Publication date: August 4, 2022Inventors: Xiaojie Xu, Kyoung Eun Kweon, Christine A. Orme, Babak Sadigh, April Sawvel
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Patent number: 6872455Abstract: A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.Type: GrantFiled: July 23, 2003Date of Patent: March 29, 2005Assignee: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de la Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong
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Publication number: 20040146722Abstract: A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.Type: ApplicationFiled: July 23, 2003Publication date: July 29, 2004Applicant: The Regents of the University of California.Inventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de la Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong
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Patent number: 6627522Abstract: A method for enhancing the equilibrium solid solubility of dopants in silicon, germanium and silicon-germanium alloys. The method involves subjecting silicon-based substrate to biaxial or compression strain. It has been determined that boron solubility was largely enhanced (more than 100%) by a compressive bi-axial strain, based on a size-mismatch theory since the boron atoms are smaller than the silicon atoms. It has been found that the large enhancement or mixing properties of dopants in silicon and germanium substrates is primarily governed by their, and to second order by their size-mismatch with the substrate. Further, it has been determined that the dopant solubility enhancement with strain is most effective when the charge and the size-mismatch of the impurity favor the same type of strain. Thus, the solid solubility of small p-type (e.g., boron) as well as large n-type (e.g.Type: GrantFiled: September 4, 2001Date of Patent: September 30, 2003Assignee: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz De La Rubia
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Patent number: 6617228Abstract: A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.Type: GrantFiled: September 18, 2002Date of Patent: September 9, 2003Assignee: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de la Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong
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Publication number: 20030042576Abstract: A method for enhancing the equilibrium solid solubility of dopants in silicon, germanium and silicon-germanium alloys. The method involves subjecting silicon-based substrate to biaxial or compression strain. It has been determined that boron solubility was largely enhanced (more than 100%) by a compressive bi-axial strain, based on a size-mismatch theory since the boron atoms are smaller than the silicon atoms. It has been found that the large enhancement or mixing properties of dopants in silicon and germanium substrates is primarily governed by their, and to second order by their size-mismatch with the substrate. Further, it has been determined that the dopant solubility enhancement with strain is most effective when the charge and the size-mismatch of the impurity favor the same type of strain. Thus, the solid solubility of small p-type (e.g., boron) as well as large n-type (e.g.Type: ApplicationFiled: September 4, 2001Publication date: March 6, 2003Applicant: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz De La Rubia
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Publication number: 20030042577Abstract: A method for enhancing the equilibrium solid solubility of dopants in silicon, germanium and silicon-germanium alloys. The method involves subjecting silicon-based substrate to biaxial or compression strain. It has been determined that boron solubility was largely enhanced (more than 100%) by a compressive bi-axial strain, based on a size-mismatch theory since the boron atoms are smaller than the silicon atoms. It has been found that the large enhancement or mixing properties of dopants in silicon and germanium substrates is primarily governed by their, and to second order by their size-mismatch with the substrate. Further, it has been determined that the dopant solubility enhancement with strain is most effective when the charge and the size-mismatch of the impurity favor the same type of strain. Thus, the solid solubility of small p-type (e.g., boron) as well as large n-type (e.g.Type: ApplicationFiled: September 5, 2002Publication date: March 6, 2003Applicant: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz De La Rubia
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Publication number: 20030032268Abstract: A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.Type: ApplicationFiled: September 18, 2002Publication date: February 13, 2003Applicant: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de la Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong
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Patent number: 6498078Abstract: A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.Type: GrantFiled: September 4, 2001Date of Patent: December 24, 2002Assignee: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de la Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong
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Publication number: 20020055022Abstract: A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.Type: ApplicationFiled: September 4, 2001Publication date: May 9, 2002Applicant: The Regents of the University of CaliforniaInventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de La Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong