Abstract: A photoacoustic system includes a semiconductor substrate including a hollow volume and a window extending in vertical alignment with a part of the hollow volume, and a surface emitting device including a waveguide and a diffraction grating, the waveguide having an upper face and a lower face, the lower face being disposed on the window, the diffraction grating being disposed on the upper face or on the lower face.

Abstract: An optoelectronic device includes an emissive structure, at least a part of which is formed of one or more semiconductor materials, configured to produce a luminous radiation when it has an electric current flowing therethrough, the luminous radiation being produced within the emissive structure and having an average wavelength ?, the emissive structure having an average optical index n and being delimited by an outlet surface, through which at least a part of the luminous radiation exits, the device further including an antireflective structure includes a sub-wavelength periodic grating which includes hollow parts and protruding parts forming a periodic structure with a pitch lower than ?/[2.n].

Abstract: The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layer 11, of an active layer 13, and of an extraction layer 6. It comprises a step of determining a distance h1s between emitting dipoles ?1 that are located in the active layer 13 and the extraction layer 6, such that the emitting dipoles ?1 of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

Abstract: An optoelectronic device includes a LED that is suited to the emission of a radiation and that includes an active layer, and a conversion layer that extends over the active layer of the LED and that includes a plurality of fluorophores suited to the conversion of the radiation emitted by the LED, wherein the conversion layer is confined laterally by a mirror reflecting both the radiation converted by the fluorophores and the radiation not converted by the fluorophores, and vertically between a first and a second multilayer reflective filters forming a resonant Fabry-Perot cavity that blocks the radiation not converted by the fluorophores and has a transmittance peak for the radiation converted by the fluorophores.

Abstract: The invention relates to a method for producing a light-emitting diode, comprising a stack formed of a first semiconductor layer 11 and of an active layer 13, a reflective electrode 4 extending in contact with the first semiconductor layer 11, comprising a step of determining a distance between emitting dipoles that are located in the active layer 13 and the reflective electrode 4 for which a lifetime of the emitting dipoles having a chosen orientation is longer than that of the emitting dipoles having the non-chosen orientation.

Abstract: A light Emitting Diode includes a lower layer, an upper layer and between them an emissive structure suitable to emit a light radiation when an electric current passes through it. The upper layer is delimited by an upper surface, through which a portion at least of the light radiation exits. The lower layer is delimited by a lower surface for injecting electric charges. The upper surface forms a non-planar three-dimensional structure with hollow patterns and is covered by a contact structure made of one or several electrically-conductive materials, which extends against the surface, conforming to this non-planar surface.

Abstract: An optoelectronic light emitting device includes a light emitting diode configured to emit a first radiation, a conversion layer including at least one planar quantum well configured to convert the first radiation into a second radiation, by photoluminescence, a grating for extracting the second radiation being etched on an upper face of the layer, and a lateral reflector having a reflective surface which extends facing part at least of a lateral surface of the conversion layer.

Abstract: The invention relates to a method for producing a light-emitting diode comprising a semiconductor stack formed of a first layer 11, of an active layer 13, and of an extraction layer 6. It comprises a step of determining a distance h1s between emitting dipoles ?1 that are located in the active layer 13 and the extraction layer 6, such that the emitting dipoles ?1 of vertical orientation have in particular a lifetime longer than that of the emitting dipoles of horizontal orientation.

Abstract: The invention relates to a method for producing a light-emitting diode, comprising a stack formed of a first semiconductor layer 11 and of an active layer 13, a reflective electrode 4 extending in contact with the first semiconductor layer 11, comprising a step of determining a distance between emitting dipoles that are located in the active layer 13 and the reflective electrode 4 for which a lifetime of the emitting dipoles having a chosen orientation is longer than that of the emitting dipoles having the non-chosen orientation.

Abstract: An optoelectronic device includes a LED that is suited to the emission of a radiation and that includes an active layer, and a conversion layer that extends over the active layer of the LED and that includes a plurality of fluorophores suited to the conversion of the radiation emitted by the LED, wherein the conversion layer is confined laterally by a mirror reflecting both the radiation converted by the fluorophores and the radiation not converted by the fluorophores, and vertically between a first and a second multilayer reflective filters forming a resonant Fabry-Perot cavity that blocks the radiation not converted by the fluorophores and has a transmittance peak for the radiation converted by the fluorophores.

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract: A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract: The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

Abstract: A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.

Abstract: This slow light waveguide includes an initial region which extends, along an optical axis, from a start starting from which the width of a central waveguide begins to continuously decrease up to an end beyond which the width of the central waveguide no longer decreases up to the end of a slowing section, this initial region overlapping a broadening region where the length of lateral teeth continuously increases, a final region which extends, along the optical axis, from a start starting from which the width of the central waveguide begins to continuously increase up to an end beyond which the width of the central waveguide no longer increases, this final region overlapping a narrowing region where the length of the lateral teeth continuously decreases.

Abstract: A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.

Abstract: A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.

Abstract: A substrate locally pre-structured for the production of photonic components including a solid part made of silicon; a first localised region of the substrate, including a heat dissipation layer, produced in a localised manner on the surface of the solid part and made of a material of which the refractive index is less than that of silicon; a wave guide on the heat dissipation layer; a second localised region of the substrate, including an oxide layer produced in a localised manner on the surface of the solid part, the oxide having a heat conductivity less than that of the material of the heat dissipation layer; a wave guide on the oxide layer.