Abstract: A strengthened glass article has opposing first and second compressively stressed surface portions bound to a tensilely stressed core portion, with the first surface portion having a higher level of compressive surface stress than the second surface portion for improved resistance to surface damage, the compressively stressed surface portions being provided by lamination, ion-exchange, thermal tempering, or combinations thereof to control the stress profiles and limit the fracture energies of the articles.

Abstract: An apparatus for mixing a vaporized precursor with a gas for producing silica particles is provided. The apparatus includes a mixer housing, a precursor delivery chamber having an output in communication with the mixer housing for delivering a vaporized precursor in the mixer housing, and an oxidizing gas delivery chamber having an output in communication with the mixer housing for delivering an oxidizing gas to be mixed with the vaporized precursor. The apparatus further includes a flashback member disposed within the mixer housing and between the output of the precursor delivery chamber and the output of the oxidizing gas delivery chamber. The flashback member is located at a minimum distance from the output of the oxidizing gas delivery chamber defined by Lminimum (cm)=0.453U (Re)?0.5567, wherein U is the flow rate in cm/sec of precursor and Re is the flow Reynolds number. The flashback member may include a tapered surface on at least one side to reduce recirculation of vaporized gas.

Abstract: A strengthened glass article has opposing first and second compressively stressed surface portions bound to a tensilely stressed core portion, with the first surface portion having a higher level of compressive surface stress than the second surface portion for improved resistance to surface damage, the compressively stressed surface portions being provided by lamination, ion-exchange, thermal tempering, or combinations thereof to control the stress profiles and limit the fracture energies of the articles.

Abstract: A strengthened glass article has opposing first and second compressively stressed surface portions bound to a tensilely stressed core portion, with the first surface portion having a higher level of compressive surface stress than the second surface portion for improved resistance to surface damage, the compressively stressed surface portions being provided by lamination, ion-exchange, thermal tempering, or combinations thereof to control the stress profiles and limit the fracture energies of the articles.

Abstract: An apparatus for mixing a vaporized precursor with a gas for producing silica particles is provided. The apparatus includes a mixer housing, a precursor delivery chamber having an output in communication with the mixer housing for delivering a vaporized precursor in the mixer housing, and an oxidizing gas delivery chamber having an output in communication with the mixer housing for delivering an oxidizing gas to be mixed with the vaporized precursor. The apparatus further includes a flashback member disposed within the mixer housing and between the output of the precursor delivery chamber and the output of the oxidizing gas delivery chamber. The flashback member is located at a minimum distance from the output of the oxidizing gas delivery chamber defined by Lminimum (cm)=0.453U (Re)?0.5567, wherein U is the flow rate in cm/sec of precursor and Re is the flow Reynolds number. The flashback member may include a tapered surface on at least one side to reduce recirculation of vaporized gas.

Abstract: An apparatus for mixing a vaporized precursor with a gas for producing silica particles is provided. The apparatus includes a mixer housing, a precursor delivery chamber having an output in communication with the mixer housing for delivering a vaporized precursor in the mixer housing, and an oxidizing gas delivery chamber having an output in communication with the mixer housing for delivering an oxidizing gas to be mixed with the vaporized precursor. The apparatus further includes a flashback member disposed within the mixer housing and between the output of the precursor delivery chamber and the output of the oxidizing gas delivery chamber. The flashback member is located at a minimum distance from the output of the oxidizing gas delivery chamber defined by Lminimum (cm)=0.453 U (Re)?0.5567, wherein U is the flow rate in cm/sec of precursor and Re is the flow Reynolds number. The flashback member may include a tapered surface on at least one side to reduce recirculation of vaporized gas.

Abstract: Methods of forming a laminate comprising a sheet of semiconductor material utilize a system. The system comprises a fibrous sheet, a guide member for guiding the fibrous sheet, and a melt of a semiconductor material. The sheet of semiconductor material and a laminate comprising the fibrous sheet and the sheet of semiconductor material are also included.

Abstract: A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.

Abstract: The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold.

Abstract: A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal.

Abstract: The disclosure relates to substrate molds with variable thermal mass. The disclosure relates to substrate molds comprising refractory materials having a leading edge and a trailing edge, wherein the substrate mold has a graded thermal mass comprising a leading edge thermal mass (Mt(lead)) and a trailing edge thermal mass (Mt(trail)), wherein Mt(lead) is less than Mt(trail). The disclosure also relates to methods of making articles of semiconducting material and methods of minimizing total thickness variation in articles of semiconducting material, said methods comprising using the molds disclosed.

Abstract: An apparatus for mixing a vaporized precursor with a gas for producing silica particles is provided. The apparatus includes a mixer housing, a precursor delivery chamber having an output in communication with the mixer housing for delivering a vaporized precursor in the mixer housing, and an oxidizing gas delivery chamber having an output in communication with the mixer housing for delivering an oxidizing gas to be mixed with the vaporized precursor. The apparatus further includes a flashback member disposed within the mixer housing and between the output of the precursor delivery chamber and the output of the oxidizing gas delivery chamber. The flashback member is located at a minimum distance from the output of the oxidizing gas delivery chamber defined by Lminimum (cm)=0.453 U (Re)?0.5567, wherein U is the flow rate in cm/sec of precursor and Re is the flow Reynolds number. The flashback member may include a tapered surface on at least one side to reduce recirculation of vaporized gas.

Abstract: The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon.

Abstract: Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.

Abstract: Methods are disclosed for inspecting a cylindrical porous ceramic body by positioning a diffuser near, and spaced apart from, the first end of a ceramic body; flowing a tracer flow toward the diffuser, wherein a first portion of the tracer flow passes through the diffuser, and a second portion of the tracer flow does not pass through the diffuser, the first and second portions of the tracer flow then entering the first end of the ceramic body, wherein the average velocity of the first portion of the tracer flow entering the ceramic body VAVG1 is lower than the average velocity of the second portion of the tracer flow entering the ceramic body VAVG2; directing light toward the second end of the ceramic body; and detecting reflected light coming from a location proximate the second transverse face at the second end of the ceramic body.

Abstract: The invention relates to methods of making unsupported articles of semiconducting material using thermally active molds having an external surface temperature, Tsurface, and a core temperature, Tcore, whererin Tsurface>Tcore.

Abstract: A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold.

Abstract: A strengthened glass article has opposing first and second compressively stressed surface portions bound to a tensilely stressed core portion, with the first surface portion having a higher level of compressive surface stress than the second surface portion for improved resistance to surface damage, the compressively stressed surface portions being provided by lamination, ion-exchange, thermal tempering, or combinations thereof to control the stress profiles and limit the fracture energies of the articles.

Abstract: Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed.