Patents by Inventor BANG-HAO HUANG

BANG-HAO HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240093364
    Abstract: A defect-reducing coating method is disclosed, which is characterized by making the coating surface of a sample face the bottom of the coating chamber, so that the sticking particles on side walls of the coating chamber will not fall on the coating surface of the sample during the coating process, thereby a smooth coating layer can be formed on the coating surface of the sample after the coating process is finished.
    Type: Application
    Filed: November 21, 2022
    Publication date: March 21, 2024
    Applicant: MSSCORPS CO., LTD.
    Inventors: CHI-LUN LIU, JUNG-CHIN CHEN, BANG-HAO HUANG, YU-HAN CHEN, LIKO HSU
  • Patent number: 11604153
    Abstract: A method of preparing a sample for physical analysis is disclosed, which is characterized by forming a low-temperature atomic layer deposition (ALD) metal nitride film or a low-temperature atomic layer deposition (ALD) metal oxynitride film by plasma-less enhanced atomic layer deposition (PLALD) at a temperature below 40° C. on a specimen to generate a sample for physical analysis to prevent the surface of sample for physical analysis from being damaged during physical analysis.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: March 14, 2023
    Assignee: MSSGORPS CO., LTD.
    Inventors: Chi-Lun Liu, Jung-Chin Chen, Bang-Hao Huang, Yu-Han Chen
  • Patent number: 11468556
    Abstract: This inventions provides an artificial intelligence (A.I.) identified measuring method for a semiconductor image, comprising the steps of: providing an original image of a semiconductor; identifying a type and/or a category of the original image by an artificial intelligence; introducing a predetermined dimension measuring mode corresponding to the identified type and/or the identified category to scan the original image to generate a measurement signal of the original image; and extracting a designated object from the original image to generate a specific physical parameter of the original image after operation based on a measurement signal of the designated object and the measurement signal of the original image.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: October 11, 2022
    Assignee: MSSCORPS CO., LTD.
    Inventors: Chi-Lun Liu, Jung-Chin Chen, Bang-Hao Huang, Chao-Wei Chen
  • Publication number: 20210374927
    Abstract: This inventions provides an artificial intelligence (A.I.) identified measuring method for a semiconductor image, comprising the steps of: providing an original image of a semiconductor; identifying a type and/or a category of the original image by an artificial intelligence; introducing a predetermined dimension measuring mode corresponding to the identified type and/or the identified category to scan the original image to generate a measurement signal of the original image; and extracting a designated object from the original image to generate a specific physical parameter of the original image after operation based on a measurement signal of the designated object and the measurement signal of the original image.
    Type: Application
    Filed: February 25, 2021
    Publication date: December 2, 2021
    Applicant: MSSCORPS CO., LTD.
    Inventors: CHI-LUN LIU, JUNG-CHIN CHEN, BANG-HAO HUANG, CHAO-WEI CHEN
  • Publication number: 20210190707
    Abstract: This invention provides a method of preparing a sample for physical analysis, comprising the steps of providing a specimen, and forming a low-temperature atomic layer deposition film on the specimen to generate a sample for physical analysis.
    Type: Application
    Filed: October 15, 2020
    Publication date: June 24, 2021
    Inventors: CHI-LUN LIU, JUNG-CHIN CHEN, BANG-HAO HUANG, YU-HAN CHEN