Abstract: Systems and methods are disclosed for performing interactive debugging of shader programs using a non-preemptible graphics processing unit (GPU). An iterative process is employed to repeatedly re-launch a workload for processing by the shader program on the GPU. When the GPU encounters a hardware stop event, such as by reaching a breakpoint in any thread of the shader program, encountering a hardware exception, or failing a software assertion in the shader program, the state of any executing threads is saved, graphics memory is copied to system memory, and any currently executing threads are killed to enable the GPU to process graphics data for updating a display device. Each pass of the workload may result in incrementally more data being processed. In effect, the changing state and variable data resulting from each pass of the workload has the effect that the debugger is incrementally stepping through the shader program.

Abstract: Systems and methods are disclosed for performing interactive debugging of shader programs using a non-preemptible graphics processing unit (GPU). An iterative process is employed to repeatedly re-launch a workload for processing by the shader program on the GPU. When the GPU encounters a hardware stop event, such as by reaching a breakpoint in any thread of the shader program, encountering a hardware exception, or failing a software assertion in the shader program, the state of any executing threads is saved, graphics memory is copied to system memory, and any currently executing threads are killed to enable the GPU to process graphics data for updating a display device. Each pass of the workload may result in incrementally more data being processed. In effect, the changing state and variable data resulting from each pass of the workload has the effect that the debugger is incrementally stepping through the shader program.

Abstract: Methods of forming power semiconductor devices include forming a semiconductor substrate having a drift region of first conductivity type therein and a transition region of first conductivity type that extends between the drift region and a first surface of the semiconductor substrate. A gate electrode is formed on the first surface. Base and base shielding region dopants are implanted into the transition region using the gate electrode as an implant mask. A plurality of annealing steps are performed so that the base shielding region dopants are driven in laterally and vertically to substantially their full and final depth within the substrate and thereby define first and second base shielding regions that constrict a neck of the transition region to a minimum width.

Abstract: Power MOSFET devices provide highly linear transfer characteristics (e.g., Id v. Vg) and can be used effectively in linear power amplifiers. These linear transfer characteristics are provided by a device having a channel that operates in a linear mode and a drift region that simultaneously supports large voltages and operates in a current saturation mode. A relatively highly doped transition region is provided between the channel region and the drift region. Upon depletion, this transition region provides a potential barrier that supports simultaneous linear and current saturation modes of operation. Highly doped shielding regions may also be provided that contribute to depletion of the transition region.