Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. The semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. A third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. A fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.

Abstract: A bevel gear backlash adjusting mechanism is disclosed in which a bevel gear is carried by a bearing and is rotatably carried by a stationary shaft so as to be axially shiftable therewith. The stationary shaft includes a supporting portion carried by the frame of a power tool, the supporting portion having a section slotted at an angle to the axis of the shaft. An adjustable slide is also supported by the frame and extends into the angled slotted section of the stationary shaft with an edge thereof formed as a ramp at an angle corresponding to the angle of the slotted section and in engagement therewith. Motion of the adjustable slide normal to the shaft will influence axial motion of the stationary shaft and the bevel gear carried thereon so as to allow an adjustment of the mesh between the bevel gear and its associated bevel gear.