Patents by Inventor Baris Cagdaser
Baris Cagdaser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150214912Abstract: A MEMS acoustic sensor includes a transducer with a frequency response with a gain peak, and a peak reduction circuit with a frequency response and coupled to the transducer. The frequency response of the peak reduction circuit causes attenuation of the gain peak.Type: ApplicationFiled: January 27, 2014Publication date: July 30, 2015Applicant: Invensense, Inc.Inventors: Aleksey S. Khenkin, Baris Cagdaser, James Christian Salvia, Fariborz Assaderaghi
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Publication number: 20150195665Abstract: An acoustic sensor system has an acoustic sensor with a cavity, a cavity leakage, and a cavity pressure. The acoustic sensor system further has a test controller coupled to the acoustic sensor that causes a change in the cavity pressure. A response of the acoustic sensor to the change in the cavity pressure is used to measure the cavity leakage.Type: ApplicationFiled: January 7, 2014Publication date: July 9, 2015Applicant: Invensense, Inc.Inventors: James Christian Salvia, Baris Cagdaser, Aleksey S. Khenkin
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Publication number: 20150125004Abstract: A programmable acoustic sensor is disclosed. The programmable acoustic sensor includes a MEMS transducer and a programmable circuitry coupled to the MEMS transducer. The programmable circuitry includes a power pin and a ground pin. The programmable acoustic sensor also includes a communication channel enabling data exchange between the programmable circuitry and a host system. One of the power pin and the ground pin can be utilized for data exchange.Type: ApplicationFiled: November 7, 2013Publication date: May 7, 2015Applicant: InvenSense, Inc.Inventors: Baris CAGDASER, Omid OLIAEI, Behrad ARIA
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Patent number: 9006832Abstract: A high-voltage MEMS system compatible with low-voltage semiconductor process technology is disclosed. The system comprises a MEMS device coupled to a high-voltage bias generator employing an extended-voltage isolation residing in a semiconductor technology substrate. The system avoids the use of high-voltage transistors so that special high-voltage processing steps are not required of the semiconductor technology, thereby reducing process cost and complexity. MEMS testing capability is addressed with a self-test circuit allowing modulation of the bias voltage and current so that a need for external high-voltage connections and associated electro-static discharge protection circuitry are also avoided.Type: GrantFiled: March 24, 2011Date of Patent: April 14, 2015Assignee: Invensense, Inc.Inventors: Derek Shaeffer, Baris Cagdaser, Joseph Seeger
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Patent number: 8947081Abstract: A micromachined magnetic field sensor is disclosed. The micromachined magnetic field sensor includes a substrate; and a drive subsystem partially supported by the substrate with a plurality of beams, and at least one anchor; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field vector along a third axis. The micromachined magnetic field sensor also includes a position transducer to detect the motion of the drive subsystem and an electrostatic offset cancellation mechanism coupled to the drive subsystem.Type: GrantFiled: January 11, 2011Date of Patent: February 3, 2015Assignee: Invensense, Inc.Inventors: Joseph Seeger, Chiung C. Lo, Baris Cagdaser, Derek Shaeffer
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Patent number: 8860409Abstract: A micromachined magnetic field sensor is disclosed. The micromachined magnetic field comprises a substrate; a drive subsystem, the drive subsystem comprises a plurality of beams, and at least one anchor connected to the substrate; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field along a third axis. The micromachined magnetic field sensor also includes a sense subsystem, the sense subsystem includes a plurality of beams, and at least one anchor connected to the substrate; wherein a portion of the sense subsystem moves along a fourth axis; a coupling spring between the drive subsystem and the sense subsystem which causes motion of the sense subsystem in response to the magnetic field; and a position transducer to detect the motion of the sense subsystem.Type: GrantFiled: January 11, 2011Date of Patent: October 14, 2014Assignee: Invensense, Inc.Inventors: Joseph Seeger, Chiung C. Lo, Baris Cagdaser, Derek Shaeffer
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Patent number: 8847693Abstract: A system and method is disclosed that provides a technique for generating an accurate time base for MEMS sensors and actuators which has a vibrating MEMS structure. The accurate clock is generated from the MEMS oscillations and converted to the usable range by means of a frequency translation circuit.Type: GrantFiled: April 16, 2012Date of Patent: September 30, 2014Assignee: Invensense, Inc.Inventors: Joseph Seeger, Goksen G. Yaralioglu, Baris Cagdaser
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Patent number: 8841958Abstract: A charge pump circuit is disclosed. The charge pump circuit comprises a transfer capacitor receiving a first clock phase and a driving capacitor receiving a second clock phase, the second clock phase opposite to the first clock phase. The circuit includes a first switch coupling an input node to the transfer capacitor. The first switch being controlled by the driving capacitor. The circuit further includes a second switch coupling the input node to the driving capacitor. The second switch being controlled by the transfer capacitor. The circuit also includes a third switch coupling the transfer capacitor to an output node. The third switch being controlled by the driving capacitor. The third switch operating in phase opposition to the first switch. The circuit finally includes a charge storage capacitor coupled to the output node.Type: GrantFiled: March 11, 2013Date of Patent: September 23, 2014Assignee: InvenSense, Inc.Inventors: Derek Shaeffer, Baris Cagdaser
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Publication number: 20140266256Abstract: A method and system for measuring displacement of a structure is disclosed. The method and system comprise providing a first capacitance and providing a second capacitance. The first and second capacitances share a common terminal. The method and system further include determining a difference of the inverses of the value of the first and second capacitances when the structure is displaced. The first capacitance varies in inverse relation to the displacement of the structure.Type: ApplicationFiled: July 26, 2013Publication date: September 18, 2014Applicant: InvenSense, Inc.Inventors: Baris CAGDASER, Du CHEN, Hasan AKYOL, Derek SHAEFFER
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Publication number: 20140264652Abstract: An integrated MEMS acoustic sensor has a MEMS transducer and a programmable electronic interface. The programmable electronic interface includes non-volatile memory and is coupled to the MEMS transducer. Using programmable electrical functions, the programmable electronic interface is operable to sense variations in the MEMS transducer caused by application of an acoustic pressure to the MEMS transducer.Type: ApplicationFiled: July 24, 2013Publication date: September 18, 2014Applicant: Invensense, Inc.Inventors: Baris Cagdaser, Martin Lim, Fariborz Assaderaghi
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Patent number: 8797090Abstract: A charge pump circuit is disclosed. The charge pump circuit comprises a transfer capacitor receiving a first clock phase and a driving capacitor receiving a second clock phase, the second clock phase opposite to the first clock phase. The circuit includes a first switch coupling an input node to the transfer capacitor. The first switch being controlled by the driving capacitor. The circuit further includes a second switch coupling the input node to the driving capacitor. The second switch being controlled by the transfer capacitor. The circuit also includes a third switch coupling the transfer capacitor to an output node. The third switch being controlled by the driving capacitor. The third switch operating in phase opposition to the first switch. The circuit finally includes a charge storage capacitor coupled to the output node.Type: GrantFiled: March 11, 2013Date of Patent: August 5, 2014Assignee: Invensense, Inc.Inventors: Derek Shaeffer, Baris Cagdaser
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Publication number: 20140167789Abstract: A MEMS capacitive sensing interface includes a sense capacitor having a first terminal and a second terminal, and having associated therewith a first electrostatic force. Further included in the MEMS capacitive sensing interface is a feedback capacitor having a third terminal and a fourth terminal, the feedback capacitor having associated therewith a second electrostatic force. The second and the fourth terminals are coupled to a common mass, and a net electrostatic force includes the first and second electrostatic forces acting on the common mass. Further, a capacitance measurement circuit measures the sense capacitance and couples the first terminal and the third terminal. The capacitance measurement circuit, the sense capacitor, and the feedback capacitor define a feedback loop that substantially eliminates dependence of the net electrostatic force on a position of the common mass.Type: ApplicationFiled: December 19, 2012Publication date: June 19, 2014Applicant: INVENSENSE, INC.Inventors: Baris Cagdaser, Derek Shaeffer, Joseph Seeger
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Patent number: 8723600Abstract: A circuit utilizes a MOS device in a triode mode of operation and includes a biasing circuit and a MOS device. The MOS device has a drain, a source, and a gate terminal, and is coupled to the biasing circuit. The source terminal, drain terminal, and gate terminal each has a potential and the drain and the source terminals have a resistance. The biasing circuit couples the drain and source terminals of the MOS device to the gate terminal of the MOS device. The biasing circuit couples a DC potential to the gate terminal to adjust the resistance between the source and drain terminals of the MOS device. The resistance between the source and drain terminals is a non-linear function of voltage potentials at the source and drain terminals. The biasing circuit reduces the non-linearity of the resistance between the drain and source terminals by modulating the potential at the gate terminal by a combination of source and drain terminal potentials.Type: GrantFiled: February 22, 2013Date of Patent: May 13, 2014Assignee: Invensense, Inc.Inventors: Baris Cagdaser, Du Chen
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Publication number: 20140118073Abstract: A circuit utilizes a MOS device in a triode mode of operation and includes a biasing circuit and a MOS device. The MOS device has a drain, a source, and a gate terminal, and is coupled to the biasing circuit. The source terminal, drain terminal, and gate terminal each has a potential and the drain and the source terminals have a resistance. The biasing circuit couples the drain and source terminals of the MOS device to the gate terminal of the MOS device. The biasing circuit couples a DC potential to the gate terminal to adjust the resistance between the source and drain terminals of the MOS device. The resistance between the source and drain terminals is a non-linear function of voltage potentials at the source and drain terminals. The biasing circuit reduces the non-linearity of the resistance between the drain and source terminals by modulating the potential at the gate terminal by a combination of source and drain terminal potentials.Type: ApplicationFiled: February 22, 2013Publication date: May 1, 2014Applicant: INVENSENSE, INC.Inventors: Baris Cagdaser, Du Chen
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Patent number: 8567246Abstract: An integrated MEMS device is disclosed. The system comprises a MEMS resonator; and a MEMS device coupled to a MEMS resonator. The MEMS resonator and MEMS device are fabricated on a common substrate so that certain characteristics of the MEM resonator and MEMS device track each other as operating conditions vary.Type: GrantFiled: December 28, 2010Date of Patent: October 29, 2013Assignee: Invensense, Inc.Inventors: Derek Shaeffer, Baris Cagdaser, Chiung C. Lo, Joseph Seeger
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Publication number: 20120242400Abstract: A high-voltage MEMS system compatible with low-voltage semiconductor process technology is disclosed. The system comprises a MEMS device coupled to a high-voltage bias generator employing an extended-voltage isolation residing in a semiconductor technology substrate. The system avoids the use of high-voltage transistors so that special high-voltage processing steps are not required of the semiconductor technology, thereby reducing process cost and complexity. MEMS testing capability is addressed with a self-test circuit allowing modulation of the bias voltage and current so that a need for external high-voltage connections and associated electro-static discharge protection circuitry are also avoided.Type: ApplicationFiled: March 24, 2011Publication date: September 27, 2012Applicant: INVENSENSE, INC.Inventors: Derek SHAEFFER, Baris CAGDASER, Joseph SEEGER
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Publication number: 20120235670Abstract: Described herein are systems, devices, and methods that provide a stable magnetometer. The magnetometer includes a drive element that facilitates flow of a drive current through a node and a sense element operable to detect a magnetic field operating on the drive current. To reduce offset in the detection of the magnetic field, a voltage detector, electrically coupled to the drive element through the node, determines a variation between a node voltage and a target voltage. The voltage detector facilitates suppression of the variation and thereby minimizes the offset in the sense element.Type: ApplicationFiled: March 15, 2012Publication date: September 20, 2012Applicant: INVENSENSE, INC.Inventors: Baris Cagdaser, Derek Shaeffer, Joe Seeger, Chiung C. Lo
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Publication number: 20120200362Abstract: A system and method is disclosed that provides a technique for generating an accurate time base for MEMS sensors and actuators which has a vibrating MEMS structure. The accurate clock is generated from the MEMS oscillations and converted to the usable range by means of a frequency translation circuit.Type: ApplicationFiled: April 16, 2012Publication date: August 9, 2012Applicant: INVENSENSE, INC.Inventors: Joseph SEEGER, Goksen G. YARALIOGLU, Baris CAGDASER
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Publication number: 20120176129Abstract: A micromachined magnetic field sensor is disclosed. The micromachined magnetic field sensor comprises a substrate; and a drive subsystem partially supported by the substrate with a plurality of beams, and at least one anchor; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field vector along a third axis. The micromachined magnetic field sensor also includes a position transducer to detect the motion of the drive subsystem and an electrostatic offset cancellation mechanism coupled to the drive subsystem.Type: ApplicationFiled: January 11, 2011Publication date: July 12, 2012Applicant: InvenSense, Inc.Inventors: Joseph SEEGER, Chiung C. LO, Baris CAGDASER, Derek SHAEFFER
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Publication number: 20120176128Abstract: A micromachined magnetic field sensor comprising is disclosed. The micromachined magnetic field comprises a substrate; a drive subsystem, the drive subsystem comprises a plurality of beams, and at least one anchor connected to the substrate; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field along a third axis. The micromachined magnetic field sensor also includes a sense subsystem, the sense subsystem comprises a plurality of beams, and at least one anchor connected to the substrate; wherein a portion of the sense subsystem moves along a fourth axis; a coupling spring between the drive subsystem and the sense subsystem which causes motion of the sense subsystem in response to the magnetic field; and a position transducer to detect the motion of the sense subsystem.Type: ApplicationFiled: January 11, 2011Publication date: July 12, 2012Applicant: INVENSENSE, INC.Inventors: Joseph SEEGER, Chiung C. LO, Baris CAGDASER, Derek SHAEFFER