Patents by Inventor Barney M. Cohen
Barney M. Cohen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7053002Abstract: The present invention provides a method and apparatus for precleaning a patterned substrate with a plasma comprising a mixture of argon, helium, and hydrogen. Addition of helium to the gas mixture of argon and hydrogen surprisingly increases the etch rate in comparison to argon/hydrogen mixtures. Etch rates are improved for argon concentrations below about 75% by volume. RF power is capacitively and inductively coupled to the plasma to enhance control of the etch properties. Argon, helium, and hydrogen can be provided as separate gases or as mixtures.Type: GrantFiled: December 4, 1998Date of Patent: May 30, 2006Assignee: Applied Materials, INCInventors: Barney M. Cohen, Kenny King-Tai Ngan, Xiangbing Li
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Patent number: 7014887Abstract: The present invention generally provides a method for improving fill and electrical performance of metals deposited on patterned dielectric layers. Apertures such as vias and trenches in the patterned dielectric layer are etched to enhance filling and then cleaned in the same chamber to reduce metal oxides within the aperture.Type: GrantFiled: September 2, 1999Date of Patent: March 21, 2006Assignee: Applied Materials, Inc.Inventors: Barney M. Cohen, Suraj Rengarajan, Xiangbing Li, Kenny King-Tai Ngan, Peijun Ding
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Patent number: 6589890Abstract: The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.Type: GrantFiled: February 12, 2002Date of Patent: July 8, 2003Assignee: Applied Materials, Inc.Inventors: Barney M. Cohen, Suraj Rengarajan, Kenny King-Tai Ngan
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Patent number: 6547934Abstract: The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling.Type: GrantFiled: May 21, 1998Date of Patent: April 15, 2003Assignee: Applied Materials, Inc.Inventors: Barney M. Cohen, Gilbert Hausmann, Vijay Parkhe, Zheng Xu
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Publication number: 20020106908Abstract: The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.Type: ApplicationFiled: February 12, 2002Publication date: August 8, 2002Applicant: Applied Materials, Inc.Inventors: Barney M. Cohen, Suraj Rengarajan, Kenny King-Tai Ngan
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Patent number: 6346489Abstract: The invention is a precleaning process suitable for fabricating metal plugs in a low-&kgr;, carbon-containing dielectric. More specifically, the invention is a process for cleaning a contact area of a metal conductor on a semiconductor workpiece so as to minimize damage to a low-&kgr;, carbon-containing dielectric overlying the metal. After forming contact openings in the low-&kgr; dielectric so as to expose contact areas on the underlying metal conductor, the contact areas are cleaned by exposing the workpiece to an atmosphere formed by plasma decomposition of a mixture of hydrogen-containing and helium gases. Surprisingly, our preclean process can repair damage to the dielectric caused by preceding process steps, such as oxygen plasma ashing processes for removing photoresist.Type: GrantFiled: September 2, 1999Date of Patent: February 12, 2002Assignee: Applied Materials, Inc.Inventors: Barney M. Cohen, Suraj Rengarajan, Kenny King-Tai Ngan
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Publication number: 20020009892Abstract: The present invention provides a method and apparatus for precleaning a patterned substrate with a plasma comprising a mixture of argon, helium, and hydrogen. Addition of helium to the gas mixture of argon and hydrogen surprisingly increases the etch rate in comparison to argon/hydrogen mixtures. Etch rates are improved for argon concentrations below about 75% by volume. RF power is capacitively and inductively coupled to the plasma to enhance control of the etch properties. Argon, helium, and hydrogen can be provided as separate gases or as mixtures.Type: ApplicationFiled: December 4, 1998Publication date: January 24, 2002Inventors: BARNEY M. COHEN, KENNY KING-TAI NGAN, XIANGBING LI
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Publication number: 20010050265Abstract: The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling.Type: ApplicationFiled: May 21, 1998Publication date: December 13, 2001Inventors: BARNEY M. COHEN, GILBERT HAUSMANN, VIJAY PARKHE, ZHENG XU
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Patent number: 6313042Abstract: A method of cleaning a contact area of a semiconductor or metal region on a substrate of an electronic device. First, the contact area is cleaned by exposing the substrate to a plasma that includes fluorine-containing species. Second, the substrate is exposed to a second atmosphere that scavenges fluorine, preferably formed by plasma decomposition of a hydrogen-containing gas. The second atmosphere removes any fluorine residue remaining on the contact area and overcomes any need to include argon sputtering in the cleaning process. Another aspect of the invention is a method of depositing a refractory metal over a contact area of a semiconductor region on a substrate. The contact area is cleaned according to the two-step process of the preceding paragraph. Then a refractory metal is deposited over the contact area. The two-step cleaning process can reduce the electrical resistance between the refractory metal and the semiconductor region.Type: GrantFiled: September 3, 1999Date of Patent: November 6, 2001Assignee: Applied Materials, Inc.Inventors: Barney M. Cohen, Jingang Su, Kenny King-Tai Ngan, Jr-Jyan Chen
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Patent number: 6110836Abstract: Native oxides can be removed from a substrate having high aspect ratio openings therein by using a plasma gas precursor mixture of a reactive halogen-containing gas and a carrier gas such as helium. The lightweight ions generated in the plasma react with oxygen to produce very volatile oxygen-containing species that can be readily removed through the exhaust system of the plasma chamber, preventing re-deposition of oxides on the surface of the substrate or on the sidewalls or bottom of the openings. When the substrate is mounted in a plasma chamber having dual power sources that can form a plasma above the substrate and can apply bias to the substrate, tapered openings are formed rapidly that can be readily filled without forming voids.Type: GrantFiled: April 22, 1999Date of Patent: August 29, 2000Assignee: Applied Materials, Inc.Inventors: Barney M. Cohen, Jingang Su, Kenny King-Tai Ngan
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Patent number: 6079354Abstract: A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300 and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.Type: GrantFiled: April 24, 1998Date of Patent: June 27, 2000Assignee: Applied Materials, Inc.Inventors: Ted Guo, Barney M. Cohen, Amrita Verma
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Patent number: 6077353Abstract: The invention generally provides an apparatus that reduces backside sputtering of the substrate in a pre-clean chamber and other etch chambers. The invention also provides an apparatus that reduces flaking of material from the film formed on the surfaces of the process kit and extends the specified lifetime of a process kit. One aspect of the invention provides an apparatus for supporting a substrate, comprising a support pedestal contacting a central portion of the substrate and an insulator surrounding the support pedestal, the insulator having a beveled portion extending from a circumferential edge of the substrate.Type: GrantFiled: June 2, 1998Date of Patent: June 20, 2000Assignee: Applied Materials, Inc.Inventors: Mohamed A. Al-Sharif, Bradley O. Stimson, Debabrata Ghosh, Barney M. Cohen, Kenny King-Tai Ngan, Murali Narasimhan
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Patent number: 5763010Abstract: A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300.degree. and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.Type: GrantFiled: May 8, 1996Date of Patent: June 9, 1998Assignee: Applied Materials, Inc.Inventors: Ted Guo, Barney M. Cohen, Amrita Verma
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Patent number: 5685941Abstract: A plasma reactor for carrying out plasma processing of a semiconductor substrate includes a vacuum chamber including apparatus for introducing a gas into the interior thereof, an induction coil encircling a region of the vacuum chamber, the coil being connected across an RF power source, and an electrode positioned adjacent the region and connected to the RF power source for capacitively coupling RF power to the gas in the interior of the vacuum chamber. The electrode has a surface area facing the region which is large enough to provide capacitive coupling of RF power to the gas in the region sufficient to facilitate igniting a plasma, but which is small enough so that, during steady-state maintenance of the plasma, most of the RF power coupled to the plasma from the RF power source is coupled inductively rather than capacitively.Type: GrantFiled: November 21, 1995Date of Patent: November 11, 1997Assignee: Applied Materials, Inc.Inventors: John Forster, Barney M. Cohen, Bradley O. Stimson, George Proulx