Patents by Inventor Barry Levine
Barry Levine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150115319Abstract: An avalanche photodiode includes a first semiconductor layer, a multiplication layer, a charge control layer, a second semiconductor layer, a graded absorption layer, a blocking layer and a second contact layer. The multiplication layer is located between the charge control layer and the first semiconductor layer. The charge control layer is located between the second semiconductor layer and the multiplication layer. The second semiconductor layer is located between the charge control later and the graded absorption layer. The graded absorption layer is located between the second semiconductor layer and the blocking layer.Type: ApplicationFiled: May 17, 2013Publication date: April 30, 2015Inventor: Barry Levine
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Publication number: 20100075965Abstract: Phosphatidylinositol (PI) 3 kinase inhibitor compounds, their pharmaceutically acceptable salts, and prodrugs thereof; compositions of the new compounds, either alone or in combination with at least one additional therapeutic agent, with a pharmaceutically acceptable carrier; and uses of the new compounds, either alone or in combination with at least one additional therapeutic agent, in the prophylaxis or treatment of proliferative diseases characterized by the abnormal activity of growth factors, protein serine/threonine kinases, phospholipid kinases, G-protein coupled receptors, and phosphatases.Type: ApplicationFiled: February 14, 2007Publication date: March 25, 2010Inventors: Zhi-Jie Ni, Sabina Pecchi, Matthew Burger, Wooseok Han, Aaron Smith, Gordana Atallah, Sarah Bartulis, Kelly Frazier, Joelle Verhagen, Yanchen Zhang, Ed Iwanowicz, Tom Hendrickson, Mark Knapp, Hanne Merritt, Charles Voliva, Marion Wiesmann, Darren Mark Legrand, Ian Bruce, James Dale, Jiong Lan, Barry Levine, Abran Costales, Jui Liu, Teresa Pick, Daniel Menezes
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Patent number: 7468503Abstract: A PIN photodetector includes a first semiconductor contact layer, a semiconductor absorption layer having a larger area than the first semiconductor contact layer, a semiconductor passivation layer positioned between the first semiconductor contact layer and absorption layer, and a second semiconductor contact layer. The semiconductor absorption layer and passivation layers are positioned between the first and second semiconductor contact layers.Type: GrantFiled: April 30, 2004Date of Patent: December 23, 2008Assignee: Picometrix, LLCInventors: Cheng C. Ko, Barry Levine
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Patent number: 7348608Abstract: A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the two contact areas and a semiconductor absorption layer is positioned between the multiplication layer and the upper contact layer. The photodiode has a low capacitance and a low field near the edges of the semiconductor multiplication and absorption layers.Type: GrantFiled: April 30, 2004Date of Patent: March 25, 2008Assignee: Picometrix, LLCInventors: Cheng C. Ko, Barry Levine
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Patent number: 7348607Abstract: The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.Type: GrantFiled: February 3, 2003Date of Patent: March 25, 2008Assignee: Picometrix, LLCInventors: Cheng C. Ko, Barry Levine
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Publication number: 20070299039Abstract: New substituted benz-azole compounds, compositions and methods of inhibition of Raf kinase activity in a human or animal subject are provided. The new compounds compositions may be used either alone or in combination with at least one additional agent for the treatment of a Raf kinase mediated disorder, such as cancer.Type: ApplicationFiled: November 18, 2005Publication date: December 27, 2007Applicant: Chiron CorporationInventors: Payman Amiri, Wendy Fantl, Teresa Hansen, Barry Levine, Christopher McBride, Daniel Poon, Savithri Ramurthy, Paul Renhowe, Cynthia Shafer, Sharadha Subramanian, Leonard Sung
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Publication number: 20070161680Abstract: New substituted benzimidazole compounds, compositions, and methods of inhibition of kinase activity associated with tumorigenesis in a human or animal subject are provided. In certain embodiments, the compounds and compositions are effective to inhibit the activity of at least one serine/threonine kinase or receptor tyrosine kinase. The new compounds and compositions may be used either alone or in combination with at least one additional agent for the treatment of a serine/threonine kinase- or receptor tyrosine kinase-mediated disorder, such as cancer.Type: ApplicationFiled: August 30, 2006Publication date: July 12, 2007Inventors: Mina Alkawa, Payman Amiri, Jeffrey Dove, Barry Levine, Christopher McBride, Teresa Pick, Daniel Poon, Savithri Ramurthy, Paul Renhowe, Cynthia Shafer, Darrin Stuart, Sharadha Subramanian
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Publication number: 20070123546Abstract: Disclosed are 2-amino-7,8-dihydro-6H-pyrido[4,3-d]pyrimidin-5-one compounds, their stereoisomers, tautomers, pharmaceutically acceptable salts, and prodrugs thereof; compositions that include a pharmaceutically acceptable carrier and one or more of the 2-amino-7,8-dihydro-6H-pyrido[4,3-d]pyrimidin-5-one compounds, either alone or in combination with at least one additional therapeutic agent. Disclosed also are methods of using the 2-amino-7,8-dihydro-6H-pyrido[4,3-d]pyrimidin-5-one compounds, either alone or in combination with at least one additional therapeutic agent, in the prophylaxis or treatment of cellular proliferative, viral, autoimmune, cardiovascular, and central nervous system diseases.Type: ApplicationFiled: September 28, 2006Publication date: May 31, 2007Inventors: Timothy Machajewski, Cynthia Shafer, Christopher McBride, William Antonios-McCrea, Brandon Doughan, Barry Levine, Yi Xia, Maureen McKeena, X. Wang, Kris Mendenhall, Yasheen Zhou, Baoquing Gong, Dan Gu, John Dolan, John Tulinsky, Kristin Brinner, Zhenhai Gao
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Publication number: 20070027150Abstract: 2-Amino-quinazolin-5-one compounds, stereoisomers, tautomers, pharmaceutically acceptable salts, and prodrugs thereof; compositions that include a pharmaceutically acceptable carrier and one or more of the 2-amino-quinazolin-5-one compounds, either alone or in combination with at least one additional therapeutic agent. Methods of using the 2-amino-quinazolin-5-one compounds, either alone or in combination with at least one additional therapeutic agent, in the prophylaxis or treatment of cell proliferative diseases.Type: ApplicationFiled: April 14, 2006Publication date: February 1, 2007Inventors: Cornelia Bellamacina, Abran Costales, Brandon Doughan, Susan Fong, Zhenhai Gao, Thomas Hendrickson, Barry Levine, Xiaodong Lin, Timothy Machajewski, Christopher McBride, William Antonios-McCrea, Maureen McKenna, Kris Mendenhall, Alice Rico, Cynthia Shafer, X. Wang, Yi Xia, Yasheen Zhou
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Patent number: 7078741Abstract: The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particular, the doping is concentration graded from a high value near the anode to a lower p concentration towards the cathode. By grading the doping in this way, an increase in absorption is achieved, improving the responsivity of the device. Although this doping increases the capacitance relative to an intrinsic semiconductor of the same thickness, the pseudo electric field that is created by the graded doping gives the electrons a very high velocity which more than compensates for this increased capacitance.Type: GrantFiled: February 3, 2003Date of Patent: July 18, 2006Assignee: Picometrix, Inc.Inventors: Cheng C. Ko, Barry Levine
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Publication number: 20060089369Abstract: New pyrimidine or pyridine based compounds, compositions and methods of inhibiting the activity of glycogen synthase kinase (GSK3) in vitro and of treatment of GSK3 mediated disorders in vivo are provided. The methods, compounds and compositions of the invention may be employed alone, or in combination with other pharmacologically active agents in the treatment of disorders mediated by GSK3 activity, such as diabetes, Alzheimer's disease and other neurodegenerative disorders, obesity, atherosclerotic cardiovascular disease, essential hypertension, polycystic ovary syndrome, syndrome X, ischemia, traumatic brain injury, bipolar disorder, immunodeficiency or cancer.Type: ApplicationFiled: September 6, 2005Publication date: April 27, 2006Applicant: Chiron CorporationInventors: John Nuss, Stephen Harrison, David Ring, Rustum Boyce, Kirk Johnson, Keith Pfister, Savithri Ramurthy, Lynn Seely, Allan Wagman, Manoj Desai, Barry Levine
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Publication number: 20050192287Abstract: New substituted benzazole compounds, compositions and methods of inhibition of Raf kinase activity in a human or animal subject are provided. The new compounds compositions may be used either alone or in combination with at least one additional agent for the treatment of a Raf kinase mediated disorder, such as cancer.Type: ApplicationFiled: October 15, 2004Publication date: September 1, 2005Applicant: Chiron CorporationInventors: Abran Costales, Teresa Hansen, Barry Levine, Christopher McBride, Daniel Poon, Savithri Ramurthy, Paul Renhowe, Cynthia Shafer, Sharadha Subramanian, Joelle Verhagen
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Publication number: 20050156192Abstract: The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.Type: ApplicationFiled: February 3, 2003Publication date: July 21, 2005Inventors: Cheng Ko, Barry Levine
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Publication number: 20050056861Abstract: The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semi-conductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particular, the doping is concentration graded from a high value near the anode to a lower p concentration towards the cathode. By grading the doping in this way, an increase in absorption is achieved, improving the responsivity of the device. Although this doping increases the capacitance relative to an intrinsic semiconductor of the same thickness, the pseudo electric field that is created by the graded doping gives the electrons a very high velocity which more than compensates for this increased capacitance.Type: ApplicationFiled: February 3, 2003Publication date: March 17, 2005Inventors: Cheng Ko, Barry Levine
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Publication number: 20040251483Abstract: A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the two contact areas and a semiconductor absorption layer is positioned between the multiplication layer and the upper contact layer. The photodiode has a low capacitance and a low field near the edges of the semiconductor multiplication and absorption layers.Type: ApplicationFiled: April 30, 2004Publication date: December 16, 2004Inventors: Cheng C. Ko, Barry Levine
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Patent number: 5106097Abstract: An apparatus and method of playing an audio quiz game wherein a player attempts to answer a question after listening to a corresponding audio clip provided on a compact disc. Each track of the compact disc contains one or more sound clips separated by audio cues. The questions and answers relating to specific tracks are provided in a book, or playing cards, or in computer memory, and can be randomly accessed.Type: GrantFiled: February 28, 1991Date of Patent: April 21, 1992Assignee: RykodiscInventor: Barry Levine