Abstract: A first semiconductor device includes an interfacial layer over a substrate, a first high-? dielectric layer over the interfacial layer, a second high-? dielectric layer over the first high-? dielectric layer, a Ti—Si mixing layer over the second high-? dielectric layer, and a gate electrode layer over the Ti—Si mixing layer. A second semiconductor device includes an interfacial layer over a substrate, a first high-? dielectric layer over the interfacial layer, a Ti—Si mixing layer over the first high-? dielectric layer, a second high-? dielectric layer over the Ti—Si mixing layer, and a gate electrode layer over the second high-? dielectric layer. The method includes forming an interfacial layer over a substrate, forming a first high-? dielectric layer over the interfacial layer, forming a second high-? dielectric layer over the first high-? dielectric layer, and forming a gate electrode layer over the second high-? dielectric layer.

Abstract: A Resistive Random-Access Memory (RRAM) has an internal electrode; a high k dielectric layer surrounding and in contact with the internal electrode; a lower substrate; and a trench having three or more trench sides disposed within the lower substrate; and one or more interconnects each with an interconnect side. The interconnect side forms part of one of the trench sides. The internal electrode and the high k dielectric layer are disposed within the trench with the interconnect side in contact with the high k dielectric layer. In some embodiments, an external electrode is between and electrically connected to the high k dielectric layer and the internal electrode. The external electrode then forms the electrical connection between the high k dielectric and the interconnect side. Multiple embodiments are disclosed including RRAMs created in multiple substrates; different RRAM configurations; and dual, three-wire RRAMs with two interconnects. Arrays of RRAMs and methods of making are also disclosed.

Abstract: A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks and the heater material on both the sidewalls represents a PCM cell. An additional layer of the dielectric is deposited above and between the plurality of the PCM cells, and trenches are formed in the dielectric. Trenches are formed in contact with each side of each of the plurality of the PCM cells. Metal is deposited in each of the trenches. Current flow in the metal heats the heater material of one of the PCM cells.

Abstract: A first semiconductor device includes an interfacial layer over a substrate, a first high-? dielectric layer over the interfacial layer, a second high-? dielectric layer over the first high-? dielectric layer, a Ti—Si mixing layer over the second high-? dielectric layer, and a gate electrode layer over the Ti—Si mixing layer. A second semiconductor device includes an interfacial layer over a substrate, a first high-? dielectric layer over the interfacial layer, a Ti—Si mixing layer over the first high-? dielectric layer, a second high-? dielectric layer over the Ti—Si mixing layer, and a gate electrode layer over the second high-? dielectric layer. The method includes forming an interfacial layer over a substrate, forming a first high-? dielectric layer over the interfacial layer, forming a second high-? dielectric layer over the first high-? dielectric layer, and forming a gate electrode layer over the second high-? dielectric layer.

Abstract: A switchable metal insulator metal capacitor (MIMcap) and a method for fabricating the MIMcap. In another aspect of the invention operating the MIMcap is also described. A first capacitor plate and a second capacitor plate are separated by a capacitor dielectric and disposed over a substrate. A first via is electrically connected to the first capacitor plate and comprised of phase change material (PCM). The PCM is deposited in an electrically conductive state and convertible by application of heat to an insulating state. A first heater is proximate to and electrically isolated from the PCM in the first via. When the first heater is activated it converts the PCM in the first via to the insulating state. This isolates the first capacitor plate from an integrated circuit.

Abstract: A Resistive Random-Access Memory (RRAM) has an internal electrode; a high k dielectric layer surrounding and in contact with the internal electrode; a lower substrate; and a trench having three or more trench sides disposed within the lower substrate; and one or more interconnects each with an interconnect side. The interconnect side forms part of one of the trench sides. The internal electrode and the high k dielectric layer are disposed within the trench with the interconnect side in contact with the high k dielectric layer. In some embodiments, an external electrode is between and electrically connected to the high k dielectric layer and the internal electrode. The external electrode then forms the electrical connection between the high k dielectric and the interconnect side. Multiple embodiments are disclosed including RRAMs created in multiple substrates; different RRAM configurations; and dual, three-wire RRAMs with two interconnects. Arrays of RRAMs and methods of making are also disclosed.

Abstract: Methods and systems of detecting chip degradation are described. A processor may execute a test on a device at a first time, where the test includes executable instructions for the device to execute a task under specific conditions relating to a performance attribute. The processor may receive performance data indicating a set of outcomes from the task executed by the device during the test. The processor may determine a first value of a parameter of the performance attribute based on the identified subset. The processor may compare the first value with a second value of the parameter of the performance attribute. The second value is based on an execution of the test on the device at a second time. The processor may determine a degradation status of the device based on the comparison of the first value with the second value.

Abstract: A switchable metal insulator metal capacitor (MIMcap) and a method for fabricating the MIMcap. In another aspect of the invention operating the MIMcap is also described. A first capacitor plate and a second capacitor plate are separated by a capacitor dielectric and disposed over a substrate. A first via is electrically connected to the first capacitor plate and comprised of phase change material (PCM). The PCM is deposited in an electrically conductive state and convertible by application of heat to an insulating state. A first heater is proximate to and electrically isolated from the PCM in the first via. When the first heater is activated it converts the PCM in the first via to the insulating state. This isolates the first capacitor plate from an integrated circuit.

Abstract: A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks and the heater material on both the sidewalls represents a PCM cell. An additional layer of the dielectric is deposited above and between the plurality of the PCM cells, and trenches are formed in the dielectric. Trenches are formed in contact with each side of each of the plurality of the PCM cells. Metal is deposited in each of the trenches. Current flow in the metal heats the heater material of one of the PCM cells.

Abstract: A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks and the heater material on both the sidewalls represents a PCM cell. An additional layer of the dielectric is deposited above and between the plurality of the PCM cells, and trenches are formed in the dielectric. Trenches are formed in contact with each side of each of the plurality of the PCM cells. Metal is deposited in each of the trenches. Current flow in the metal heats the heater material of one of the PCM cells.

Abstract: A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks and the heater material on both the sidewalls represents a PCM cell. An additional layer of the dielectric is deposited above and between the plurality of the PCM cells, and trenches are formed in the dielectric. Trenches are formed in contact with each side of each of the plurality of the PCM cells. Metal is deposited in each of the trenches. Current flow in the metal heats the heater material of one of the PCM cells.

Abstract: A mobile energy delivery system is provided. The mobile energy delivery system includes an unmanned aerial vehicle (UAV) configured to deliver energy, a controller configured to deploy the UAV responsive to a request and a ground-based, drivable vehicle. The ground-based drivable vehicle includes an energy storage component disposed to store energy for ground-based driving, a controller configured to determine a current energy requirement for the ground-based driving and to issue the request to the controller accordingly and a frame. The frame is configured to accommodate the energy storage component and includes a single entirely smooth uppermost surface. The energy storage component is chargeable by the UAV upon the UAV being deployed by the controller in response to the request and subsequently contacting or entering into an immediate vicinity of the single entirely smooth uppermost surface during the ground-based driving.

Abstract: Methods and systems of detecting chip degradation are described. A processor may execute a test on a device at a first time, where the test includes executable instructions for the device to execute a task under specific conditions relating to a performance attribute. The processor may receive performance data indicating a set of outcomes from the task executed by the device during the test. The processor may determine a first value of a parameter of the performance attribute based on the identified subset. The processor may compare the first value with a second value of the parameter of the performance attribute. The second value is based on an execution of the test on the device at a second time. The processor may determine a degradation status of the device based on the comparison of the first value with the second value.

Abstract: Methods and circuits for monitoring circuit degradation include measuring degradation in a set of on-chip test oscillators that vary according to a quantity that influences a first type of degradation. A second type of contribution to the measured degradation is determined by extrapolating from the measured degradation for the plurality of test oscillators. The second type of contribution is subtracted from the measured degradation at a predetermined value of the quantity to determine the first type of degradation for devices represented by the predetermined value.

Abstract: Over at least part of a lifetime of a product circuit, quiescent current to a product circuit is periodically measured. Over the part of the lifetime of the product circuit, voltage to the product circuit is periodically adjusted based on the monitored quiescent current. Methods, apparatus, and computer program product are disclosed. A calibration procedure may also be performed as part of manufacturing the product circuit, in order to provide values for the quiescent current and corresponding voltage to which the voltage should be adjusted.

Abstract: Over at least part of a lifetime of a product circuit, quiescent current to a product circuit is periodically measured. Over the part of the lifetime of the product circuit, voltage to the product circuit is periodically adjusted based on the monitored quiescent current. Methods, apparatus, and computer program product are disclosed. A calibration procedure may also be performed as part of manufacturing the product circuit, in order to provide values for the quiescent current and corresponding voltage to which the voltage should be adjusted.

Abstract: Methods and circuits for monitoring circuit degradation include measuring degradation in a set of on-chip test oscillators that vary according to a quantity that influences a first type of degradation. A second type of contribution to the measured degradation is determined by extrapolating from the measured degradation for the plurality of test oscillators. The second type of contribution is subtracted from the measured degradation at a predetermined value of the quantity to determine the first type of degradation for devices represented by the predetermined value.

Abstract: Methods and circuits for monitoring circuit degradation include measuring degradation in a plurality of on-chip test oscillators that vary according to a quantity that influences hot carrier injection (HCI) degradation. The measured degradation for the plurality of test oscillators is extrapolated to determine a bias temperature instability (BTI) contribution to the measured degradation. The BTI contribution is subtracted from the measured degradation at a predetermined value of the quantity to determine the HCI degradation for devices represented by the predetermined value.

Abstract: In order to take advantage of the real time nature of intra-operative refraction or wavefront aberrometry, and visually make the history of the measurements apparent to a surgeon, a histogram of frequency vs IOL results calculated from an IOL formula is computed and IOL suggestions being accumulated are displayed in a histogram. One embodiment is a means to present to a surgeon a histogram of intra-operative refractions. Another embodiment is to automatically and intra-operatively detect the aphakic phase of a cataract surgery to display a histogram of a recommended IOL power.