Patents by Inventor Bart J. Van Zeghbroeck
Bart J. Van Zeghbroeck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9758824Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: GrantFiled: August 8, 2016Date of Patent: September 12, 2017Assignee: LIFE TECHNOLOGIES CORPORATIONInventors: Jon R. Sauer, Bart J. Van Zeghbroeck
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Publication number: 20160348168Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: ApplicationFiled: August 8, 2016Publication date: December 1, 2016Inventors: Jon S. SAUER, Bart J. VAN ZEGHBROECK
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Patent number: 9410923Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: GrantFiled: June 22, 2015Date of Patent: August 9, 2016Assignee: Life Technologies CorporationInventors: Jon R. Sauer, Bart J. Van Zeghbroeck
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Patent number: 9228976Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: GrantFiled: September 27, 2013Date of Patent: January 5, 2016Assignee: Life Technologies CorporationInventors: Jon R. Sauer, Bart J. Van Zeghbroeck
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Publication number: 20150284790Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: ApplicationFiled: June 22, 2015Publication date: October 8, 2015Inventors: Jon R. Sauer, Bart J. Van Zeghbroeck
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Publication number: 20140021048Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: ApplicationFiled: September 27, 2013Publication date: January 23, 2014Applicant: LIFE TECHNOLOGIES CORPORATIONInventors: Jon R. SAUER, Bart J. VAN ZEGHBROECK
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Publication number: 20130264204Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer.Type: ApplicationFiled: September 14, 2012Publication date: October 10, 2013Applicant: LIFE TECHNOLOGIES CORPORATIONInventors: Jon R. Sauer, Bart J. van Zeghbroeck
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Publication number: 20130068619Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer.Type: ApplicationFiled: September 14, 2012Publication date: March 21, 2013Applicant: LIFE TECHNOLOGIES CORPORATIONInventors: Jon R. Sauer, Bart J. van Zeghbroeck
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Publication number: 20120199485Abstract: A system and method employ at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region. A method for manufacturing forms such a semiconductor device. The system and method can be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand. The current has characteristics representative of the component of the polymer, such as characteristics representative of the detected base of the DNA or RNA strand.Type: ApplicationFiled: March 1, 2012Publication date: August 9, 2012Applicant: LIFE TECHNOLOGIES CORPORATIONInventors: Jon R. SAUER, Bart J. Van Zeghbroeck
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Patent number: 7508000Abstract: Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.Type: GrantFiled: November 24, 2004Date of Patent: March 24, 2009Assignee: Microsemi CorporationInventors: Bart J. Van Zeghbroeck, John T. Torvik
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Publication number: 20080119366Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: ApplicationFiled: October 30, 2007Publication date: May 22, 2008Inventors: Jon R. Sauer, Bart J. Van Zeghbroeck
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Patent number: 7241699Abstract: The invention includes methods for precisely and accurately etching layers of wide bandgap semiconductor material. According to one aspect of the invention, the method includes providing a multi-layer laminate including at least a first and second layer of wide bandgap semiconductor material, measuring a first conductance of the first layer of semiconductor material, partially etching the first layer of semiconductor material a first amount, measuring a second conductance of the first layer of semiconductor material etched the first amount, and utilizing the first and second measured conductance to determine a time required to etch the first layer of semiconductor material a second amount.Type: GrantFiled: July 30, 2003Date of Patent: July 10, 2007Assignee: Microsemi Corp.Inventors: Bart J. Van Zeghbroeck, Ivan Perez, John T. Torvik
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Patent number: 7001792Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand, proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: GrantFiled: April 24, 2001Date of Patent: February 21, 2006Assignee: Eagle Research & Development, LLCInventors: Jon R. Sauer, Bart J. van Zeghbroeck
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Patent number: 6982440Abstract: Silicon carbide semiconductor devices having regrown layers and methods of fabricating the same in a self-aligned manner. According to one aspect of the invention, the method includes growing at least one layer of silicon carbide on a substrate, removing the device from a growth chamber to perform at least one processing step, and regrowing another layer of silicon carbide on the at least one layer. According to one embodiment of the invention, the regrown layer may be a heavily doped contact layer for the formation of low resistivity ohmic contacts.Type: GrantFiled: January 9, 2003Date of Patent: January 3, 2006Assignee: PowerSicel, Inc.Inventors: Bart J. Van Zeghbroeck, John T. Torvik
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Patent number: 6764907Abstract: Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.Type: GrantFiled: February 7, 2003Date of Patent: July 20, 2004Inventors: Bart J. Van Zeghbroeck, John T. Torvik
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Publication number: 20040082191Abstract: The invention includes methods for precisely and accurately etching layers of wide bandgap semiconductor material. According to one aspect of the invention, the method includes providing a multi-layer laminate including at least a first and second layer of wide bandgap semiconductor material, measuring a first conductance of the first layer of semiconductor material, partially etching the first layer of semiconductor material a first amount, measuring a second conductance of the first layer of semiconductor material etched the first amount, and utilizing the first and second measured conductance to determine a time required to etch the first layer of semiconductor material a second amount.Type: ApplicationFiled: July 30, 2003Publication date: April 29, 2004Inventors: Bart J. Van Zeghbroeck, Ivan Perez, John Torvik
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Publication number: 20030211502Abstract: A system and method employing at least one semiconductor device, or an arrangement of insulating and metal layers, having at least one detecting region which can include, for example, a recess or opening therein, for detecting a charge representative of a component of a polymer, such as a nucleic acid strand, proximate to the detecting region, and a method for manufacturing such a semiconductor device. The system and method can thus be used for sequencing individual nucleotides or bases of ribonucleic acid (RNA) or deoxyribonucleic acid (DNA). The semiconductor device includes at least two doped regions, such as two n-typed regions implanted in a p-typed semiconductor layer or two p-typed regions implanted in an n-typed semiconductor layer. The detecting region permits a current to pass between the two doped regions in response to the presence of the component of the polymer, such as a base of a DNA or RNA strand.Type: ApplicationFiled: October 24, 2002Publication date: November 13, 2003Inventors: Jon R. Sauer, Bart J. van Zeghbroeck
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Publication number: 20030157777Abstract: Methods of constructing silicon carbide semiconductor devices in a self-aligned manner. According to one aspect of the invention, the method may include forming a mesa structure in a multi-layer laminate including at least a first and second layer of silicon carbide material. The mesa structure may then be utilized in combination with at least one planarization step to construct devices in a self-aligned manner. According to another aspect of the present invention, the mesa structure may be formed subsequent to an ion implantation and anneal steps to construct devices in a self-aligned manner. According to another aspect of the present invention, a high temperature mask capable of withstanding the high temperatures of the anneal process may be utilized to form devices in a self-aligned manner.Type: ApplicationFiled: February 7, 2003Publication date: August 21, 2003Inventors: Bart J. Van Zeghbroeck, John T. Torvik
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Publication number: 20030157745Abstract: Silicon carbide semiconductor devices having regrown layers and methods of fabricating the same in a self-aligned manner. According to one aspect of the invention, the method includes growing at least one layer of silicon carbide on a substrate, removing the device from a growth chamber to perform at least one processing step, and regrowing another layer of silicon carbide on the at least one layer. According to one embodiment of the invention, the regrown layer may be a heavily doped contact layer for the formation of low resistivity ohmic contacts.Type: ApplicationFiled: January 9, 2003Publication date: August 21, 2003Inventors: Bart J. Van Zeghbroeck, John T. Torvik
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Patent number: 5140152Abstract: A semiconductor optoelectronic device provides full duplex data communication over a single optical fiber. The semiconductor device comprises a unitary P-N light emitting portion and an N-I-P photodiode portion. The light emitting portion and the photodiode portion share a common electrode for connection to operating voltage sources. The second electrode of the light emitting portion contains a window that is associated with one end of the optical fiber. A source of operating voltage for the light emitting portion is connected to the common electrode, and through data controlled switch means and a first resistance means to the second electrode of the light emitting portion. A source of operating voltage for the photodiode portion is connected to the common electrode, and through a second resistance means to a second electrode of the light emitting portion. Differential amplifier means is connected to receive the voltage developed across the first and second resistance means.Type: GrantFiled: May 31, 1991Date of Patent: August 18, 1992Assignee: The University of Colorado Foundation, Inc.Inventor: Bart J. Van Zeghbroeck