Abstract: An electrostatic clamp (12) comprising an electrode (2), a layer of resistive material (6) located on the electrode, and a layer of dielectric (8) located on the resistive material, wherein the electrostatic clamp further comprises burls (10) which project from the layer of dielectric.

Abstract: An electrostatic clamp (12) comprising an electrode (2), a layer of resistive material (6) located on the electrode, and a layer of dielectric (8) located on the resistive material, wherein the electrostatic clamp further comprises burls (10) which project from the layer of dielectric.

Abstract: A lithographic apparatus is configured to project a pattern from a patterning device onto a substrate. The apparatus includes a gas purged sealing aperture extending between at least two different zones of the apparatus, and a gas supplier configured to supply the sealing aperture one or more gases selected from a group including hydrogen, deuterium, heavy hydrogen, deuterated hydrogen, and a mixture of argon and hydrogen.

Abstract: The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.

Abstract: A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.

Abstract: A transport box for transporting a lithographic patterning device and a lithographic apparatus adapted to cooperate with the transport box are presented. The transport box is provided with a container part having an inner space with a storing position for storing the patterning device and an opening for the transfer of the patterning device. The box also includes a closure part for closing the opening, and a channel system for evacuating and/or feeding gasses from/to the inner space the box.

Abstract: According to an embodiment, a box for transporting a lithographic patterning device is arranged to cooperate with a lithographic apparatus. The transport box may be provided with a container part having an inner space with a storing position for storing the patterning device and an opening for the transfer of the patterning device. Prior to transfer of the patterning device from the inner space to the apparatus, the inner space is pressurized. The box may also comprise a closure part for closing the opening, and/or a channel system for evacuating and/or feeding gasses from/to the inner space of the box. Other embodiments include a lithographic apparatus comprising and/or configured to cooperate with such a box.

Abstract: A cleaning system for removing contamination from at least a part of a surface of a component in a lithographic projection apparatus is disclosed. The cleaning system includes an electric field generator that generates an electric field to provide cleaning particles near the surface of the component.

Abstract: In-situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of molecular oxygen. Generally, the space will be purged with an ozoneless purge gas which contains a small amount of molecular oxygen in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of molecular oxygen into the space.

Abstract: Contaminant particles travelling with a projection beam in a lithographic projection apparatus are ionized. A purge gas may be attracted towards getter plates provided upstream of the purge gas supply. A magnetic field traps electrons generated by the ionizer to improve the ionization of the purge gas. The contaminant particles can be ionized by generating a plasma in a tube having a greater length than width.

Abstract: Cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space will be purged with an ozone-less purge gas which contains a small amount of the oxygen-containing species in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of the oxygen-containing species into the space.

Abstract: A measuring device for determining contamination of a surface of a component in an lithographic projection apparatus. The measuring device includes a radiation transmitter for transmitting radiation on at least a part of the surface and a radiation receiver for receiving radiation from the component. A processor is communicatively connected to the receiver, for deriving a property of received radiation and deriving a property of the contamination from the property of received radiation.

Abstract: A cleaning system for removing contamination from at least a part of a surface of a component in a lithographic projection apparatus is disclosed. The cleaning system includes an electric field generator that generates an electric field to provide cleaning particles near the surface of the component.

Abstract: In-situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of molecular oxygen. Generally, the space will be purged with an ozoneless purge gas which contains a small amount of molecular oxygen in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of molecular oxygen into the space.

Abstract: Contaminant particles travelling with a projection beam in a lithographic projection apparatus are ionized. A purge gas may be attracted towards getter plates provided upstream of the purge gas supply. A magnetic field traps electrons generated by the ionizer to improve the ionization of the purge gas. The contaminant particles can be ionized by generating a plasma in a tube having a greater length than width.

Abstract: Contaminant particles travelling with a projection beam in a lithographic projection apparatus are ionized. A purge gas may be attracted towards getter plates provided upstream of the purge gas supply. A magnetic field traps electrons generated by the ionizer to improve the ionization of the purge gas. The contaminant particles can be ionized by generating a plasma in a tube having a greater length than width.

Abstract: Cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space will be purged with an ozone-less purge gas which contains a small amount of the oxygen-containing species in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of the oxygen-containing species into the space.

Abstract: In-situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of molecular oxygen. Generally, the space will be purged with an ozoneless purge gas which contains a small amount of molecular oxygen in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of molecular oxygen into the space.

Abstract: Contaminant particles travelling with a projection beam in a lithographic projection apparatus are ionized. A purge gas may be attracted towards getter plates provided upstream of the purge gas supply. A magnetic field traps electrons generated by the ionizer to improve the ionization of the purge gas. The contaminant particles can be ionized by generating a plasma in a tube having a greater length than width.