Abstract: The present invention relates to compositions comprising a polymeric matrix or a gel containing functional enzymes capable of re-creating under culture conditions the cell microenvironment existing in vivo. The present invention also relates to devices for cell cultures comprising such compositions, in particular hydrogel and the use thereof to control the chemical microenvironment of a cell culture or mimic physiological or pathological conditions of the in vivo cells. The compositions and the devices described herein could be also used in vitro for evaluating the therapeutic effect of a compound on a determined cell line or on primary cells.

Abstract: A system and method for assessing biomechanical risk in the context of handling heavy loads in workplaces. The system and method are applicable during a normal working activity for acquisitions lasting a work shift. The acquired data are then analysed in relation to regulatory references and international standards for the assessment of the biomechanical risk from manual handling of loads.

Abstract: The invention provides a composition for a conductive polymeric material suitable for the production of electrodes for recording electrophysiological signals, such as electrocardiogram (EGG), electromyogram (EMG), electroencephalogram (EEG), etc and signals related to the impedance variation of the body or skin, both deriving from active and passive measures (for example, breathing, electrodermal response, etc.). For this purpose a formulation containing FEDOT and ionic liquids has been developed. The formulation according to the invention can be used generically in the context of detecting bioelectric signals and can be applied on wearable items, in particular in fabric, such as for example garments of different shapes, so as to be in direct contact with the areas of the body subject to detection.

Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).

Abstract: The present invention relates to an organic electrochemical transistor based on conducting polymers (for example PEDOT:PSS) in which the gate electrode has been integrated on the surface of the channel through the deposition of Ag halide nanoparticles, AgX (X?CI, Br, I). This configuration allows the device to operate without applying a potential difference to the gate electrode (with consequent reduction in operating costs). The device is able to detect the halide ion: by varying the nature of the nanoparticles and in particular by using AgX (X?CI, Br, I) or Ag2S the sensor acquires sensitivity towards anion X or sulfide.

Abstract: A sensorized garment is provided. The sensorized garment includes an wearable element on a skin having a hand-tightening or a closure device to securely constrain sensors, for example electrodes to detect electrophysiological signals, during a physical activity. The wearable element has a three-dimensional shape to uniquely define a right side and a left part of a circumferential zone when the wearable element is worn. The sensorized garment further includes a band carried by the circumferential zone, and at least one conductor connected between the sensor and a zone of the sensorized garment.

Abstract: The present invention relates to an organic electrochemical transistor based on conducting polymers (for example PEDOT:PSS) in which the gate electrode has been integrated on the surface of the channel through the deposition of Ag halide nanoparticles, AgX (X?CI, Br, I). This configuration allows the device to operate without applying a potential difference to the gate electrode (with consequent reduction in operating costs). The device is able to detect the halide ion: by varying the nature of the nanoparticles and in particular by using AgX (X?CI, Br, I) or Ag2S the sensor acquires sensitivity towards anion X or sulfide.

Abstract: The present invention relates to compositions comprising a polymeric matrix or a gel containing functional enzymes capable of re-creating under culture conditions the cell microenvironment existing in vivo. The present invention also relates to devices for cell cultures comprising such compositions, in particular hydrogel and the use thereof to control the chemical microenvironment of a cell culture or mimic physiological or pathological conditions of the in vivo cells. The compositions and the devices described herein could be also used in vitro for evaluating the therapeutic effect of a compound on a determined cell line or on primary cells.

Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).

Abstract: The present invention relates to organic semiconductors to be used as intrinsic, direct detectors for ionizing radiations, such as X and gamma rays, neutrons, and charged particles (alpha rays, electrons, positrons, and the like), and to a method for manufacturing such intrinsic, direct detectors for ionizing radiations. The invention further relates to instruments or complex devices provided with a detector based on, or somehow incorporating, the above detectors.

Abstract: The invention relates to a conductive fiber material comprising a base fiber material (1) including a textile fiber, a plurality of nanoparticles (20) deposited on an external surface (10) of said base fiber material, said nanoparticles including one or more metals or metal oxides and a conductive polymer layer deposited on said external surface including nanoparticles.

Abstract: Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (?) and threshold voltage (VT), a decrease in contact resistance RC, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Abstract: Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (?) and threshold voltage (VT), a decrease in contact resistance RC, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Abstract: The structure of a multilayered integrated circuit is determined by removing successive layers of the circuit. Following removal of each layer, the revealed surface is scanned by an electron beam. The intensity of backscattered or secondary electrons is detected by a first or second detector respectively. From the detected electron intensities, image processing circuitry derives a representation of the integrated circuit surface scanned. Where the surface of the integrated circuit is a flat layer of semiconductor substrate material having implanted doped areas, the surface is covered with a metallisation layer providing a Schottky barrier junction with the doped areas. Electron beam scanning of the metallisation layer induces a current at this junction which is monitored and processed to derive a representation of the outline of the doped implanted areas.