Abstract: This invention is a simplified method of digitally monitoring energy in a system. The power is measured at fixed periods, and the measurements summed in a register or accumulator. When the sum in the register or accumulator is equal to a specified energy divided by the fixed sample period a signal is generated. In power controllers or solid state power controllers (SSPC), this algorithm is used to the maximum energy load (I2t). In a solid state switch, this algorithm is used to monitor the energy in a switch and generate a signal when the exceeds a specified safe operating limit.

Abstract: This is an interconnection between electronic devices and other assemblies (e.g. printed circuits). The electronic devices are mounted on high temperature insulating bases, such as ceramic substrates. The insulating base has a conductive pattern to connect the electronic device to another assembly. The conductive pattern terminates in metal bumps capable of being connected to another assembly (e.g. a printed circuit) by a conductive adhesive or metallurgically by soldering, thermocompression, thermosonic or ultrasonic bonding. The bumps are formed by applying a metal with a melting point over 350° C. to contact pads of the conductive pattern of the insulating base, and raising the temperature of the base above the melting point of the metal causing the molten metal to draw back on to the contact pads forming a convex bump.

Abstract: A method of forming bumped substrates with protuberances for inverted or flip-connection bonding of electronic devices including semiconductor devices, integrated circuits, and/or application specific integrated circuits and electromechanical devices. The substrates are high temperature insulating materials provided with a conductive pattern. The conductive pattern has contact areas corresponding to the input/output (I/O) pads of the electronic device. A metal is applied over the contact areas, and the temperature is raised above the melting point of the metal causing the metal to melt and draw back into a convex protuberance over the contact areas. The convex protuberances are suitable for connecting to the electronic devices by conductive adhesive bonding or metallurgically bonding such as thermocompression, thermosonic or ultrasonic bonding.

Abstract: An electronic packaging module for inverted bonding of electronic devicss including semiconductor devices, integrated circuits, application specific integrated circuits, electomechanical devices and MEMS is produced with protuberances on the conductive pattern of the substrate. The protuberances are of a soft, ductile metal capable of being metallurgically bonded to the input/output pads of electronic devices. The input/output pads of the devices may be simultaneously bonded to the protuberances of the packaging module.

Abstract: A method of forming bumped substrates with protuberances for inverted or flip-connection bonding of electronic devices including semiconductor devices, integrated circuits, and/or application specific integrated circuits and electromechanical devices. The substrates are high temperature insulating materials provided with a conductive pattern. The conductive pattern has contact areas corresponding to the input/output (I/O) pads of the electronic device. A metal is applied over the contact areas, and the temperature is raised above the melting point of the metal causing the metal to melt and draw back into a convex protuberance over the contact areas. The convex protuberances are suitable for connecting to the electronic devices by conductive adhesive bonding or metallurgically bonding such as thermocompression, thermosonic or ultrasonic bonding.

Abstract: A method of forming bumped substrates with protuberances for inverted or flip-connection bonding of electronic devices including semiconductor devices, integrated circuits, and/or application specific integrated circuits and electromechanical devices. The substrates are high temperature insulating materials provided with a conductive pattern. The conductive pattern has contact areas corresponding to the input/output (I/O) pads of the electronic device. A metal is applied over the contact areas, and the temperature is raised above the melting point of the metal causing the metal to melt and draw back into a convex protuberance over the contact areas. The convex protuberances are suitable for connecting to the electronic devices by conductive adhesive bonding or metallurgically bonding such as thermocompression, thermosonic or ultrasonic bonding.

Abstract: This is an interconnection between electronic devices and other assemblies (e.g. printed circuits). The electronic devices are mounted on high temperature insulating bases, such as ceramic substrates. The insulating base has a conductive pattern to connect the electronic device to another assembly. The conductive pattern terminates in metal bumps capable of being connected to another assembly (e.g. a printed circuit) by a conductive adhesive or metallurgically by soldering, thermocompression, thermosonic or ultrasonic bonding. The bumps are formed by applying a metal with a melting point over 350° C. to contact pads of the conductive pattern of the insulating base, and raising the temperature of the base above the melting point of the metal causing the molten metal to draw back on to the contact pads forming a convex bump.

Abstract: A compact, rugged, optocoupler which is a self-contained package. The optocoupler has a photon emitter mounted on the conductive pattern of a first, inorganic substrate, and a photon detector mounted on the conductive pattern of a second, inorganic, insulating substrate. The first and second substrates are bonded to an inorganic frame to form a cell containing a photon emitter opposite a photon detector. The first and second substrates and the frame also constitute the walls of the self-contained package. The optocoupler package may be manufactured with one or multiple cells in a package.

Abstract: An electronic packaging module for bonding of power semiconductor devices is produced. The semiconductor device is mounted on a base, and enclosed by a frame and lid. The lid is an insulating substrate having a conductive pattern with protuberances on the conductive pattern of the substrate. The protuberances are of a soft, ductile metal capable of being metallurgically bonded to the metallization pads of semiconductor devices. The metal protuberances are bonded to the semiconductor device joining it to the lid, and through the conductive pattern of the lid connecting the device to the input/output contacts of the package.

Abstract: An electronic packaging module for bonding of power semiconductor devices is produced. The semiconductor device is mounted on a base, and enclosed by a frame and lid. The lid is an insulating substrate having a conductive pattern with protuberances on the conductive pattern of the substrate. The protuberances are of a soft, ductile metal capable of being metallurgically bonded to the metallization pads of semiconductor devices. The metal protuberances are bonded to the semiconductor device joining it to the lid, and through the conductive pattern of the lid connecting the device to the input/output contacts of the package.

Abstract: An electronic packaging module for inverted bonding of semiconductor devices, integrated circuits, and/or application specific integrated circuits is produced with protuberances on the conductive pattern of the substrate. The protuberances are of a soft, ductile metal capable of being metallurgically bonded to the input/output pads of semiconductor devices. The input/output pads of the semiconductor devices are simultaneously bonded to the protuberances of the packaging module.

Abstract: An electronic packaging module for inverted bonding of semiconductor devices, integrated circuits, and/or application specific integrated circuits is produced with protuberances on the conductive pattern of the substrate. The protuberances are of a soft, ductile metal capable of being metallurgically bonded to the input/output pads of semiconductor devices. The input/output pads of the semiconductor devices are simultaneously bonded to the protuberances of the packaging module.

Abstract: An electronic packaging module for inverted bonding of semiconductor devices, integrated circuits, and/or application specific integrated circuits is produced with protuberances on the conductive pattern of the substrate. The protuberances are of a soft, ductile metal capable of being metallurgically bonded to the input/output pads of semiconductor devices. The input/output pads of the semiconductor devices are simultaneously bonded to the protuberances of the packaging module.

Abstract: A method of manufacturing high connectivity ceramic multichip modules (MCM-C) using previously fired ceramic substrates, thick film dielectric layers and laser drilled vias. The laser energy is controlled in proportion to the thickness of the dielectric layer so that vias penetrate through the dielectric layers, but do not penetrate the underlying conductors. To minimize laser damage to the underlying conductors, the dielectric composition comprises fillers or pigments selected to absorb light at the wavelength emitted by the laser.