Abstract: A photolithography method, including the steps of: S1) depositing, on the upper surface of a wafer, a chemically-amplified resist; S2) exposing the resist to a sensitizing radiation through a mask, to generate acid compounds in the exposed regions; S3) heating the resist, to have the acid compounds react with dissolution-inhibiting groups; and S5) developing the resist; and including, after step S3, a step of neutralization, S4, of the acid compounds which have not reacted at step S3.

Abstract: A photolithography method, including the steps of: S1) depositing, on the upper surface of a wafer, a chemically-amplified resist; S2) exposing the resist to a sensitizing radiation through a mask, to generate acid compounds in the exposed regions; S3) heating the resist, to have the acid compounds react with dissolution-inhibiting groups; and S5) developing the resist; and including, after step S3, a step of neutralization, S4, of the acid compounds which have not reacted at step S3.

Abstract: A film is inserted between two rigid substrates which form a sample. The sample is fixed at a first end in a device for measuring creep. The device comprises means for applying a predetermined force on a free end of the sample. The film being sheared, study of its creep can be performed.

Abstract: A film is inserted between two rigid substrates which form a sample. The sample is fixed at a first end in a device for measuring creep. The device comprises means for applying a predetermined force on a free end of the sample. The film being sheared, study of its creep can be performed.

Abstract: A lithographic process employing a resist for masking a substrate includes additional steps for limiting creep of the resist. The process is suitable for chemical amplification resists incorporating substrate protection agents sensitive to the same inactivation treatment as dissolution inhibitors of the resist. The additional steps are carried out after the development of the resist by dissolution. The steps include an additional step of sensitizing the residual resist on the substrate after the development, followed by a step of bringing the residual resist into contact with neutralization compounds.