Abstract: A semiconductor device includes a semiconductor body having first and second opposite surfaces along a vertical direction, and an active diode area. The active diode area includes: a p-doped anode region adjoining the first surface; an n-doped drift region between the anode region and the second surface; an n-doped cathode contact region adjoining the second surface; a p-doped injection region adjoining the second surface and the cathode contact region; and a p-doped auxiliary region between the drift region and the cathode contact region. The auxiliary region includes first and second sub-regions. In a top view, the first sub-region covers at least part of the injection region and the second sub-region covers at least part of the cathode contact region. In the top view, the auxiliary region includes a plurality of openings covering from 0.1% to an 20% of a surface area of the active diode area at the second surface.

Abstract: A method of manufacturing a vertical power semiconductor device includes forming a drift region in a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction, the drift region including platinum atoms, and forming a field stop region in the semiconductor body between the drift region and the second main surface, the field stop region including a plurality of impurity peaks, wherein a first impurity peak of the plurality of impurity peaks is set a larger concentration than a second impurity peak of the plurality of impurity peaks, wherein the first impurity peak includes hydrogen and the second impurity peak includes helium.

Abstract: A vertical power semiconductor device is proposed. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction. The vertical power semiconductor device further includes a drift region in the semiconductor body. The drift region includes platinum atoms. The vertical power semiconductor device further includes a field stop region in the semiconductor body between the drift region and the second main surface. The field stop region includes a plurality of impurity peaks. A first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks. The first impurity peak includes hydrogen and the second impurity peak includes helium.

Abstract: A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.

Abstract: A semiconductor device includes: an n-doped drift region between first and second surfaces of a semiconductor body; a p-doped first region at the second surface; and an n-doped field stop region between the drift and first region. The field stop region includes first and second sub-regions with hydrogen related donors. A p-n junction separates the first region and first sub-region. A concentration of the hydrogen related donors, along a first vertical extent of the first sub-region, steadily increases from the pn-junction to a maximum value, and steadily decreases from the maximum value to a reference value at a first transition between the sub-regions. A second vertical extent of the second sub-region ends at a second transition to the drift region where the concentration of hydrogen related donors equals 10% of the reference value. A maximum concentration value in the second sub-region is at most 20% larger than the reference value.

Abstract: A semiconductor device includes: a drift region of a first conductivity type arranged between first and second surfaces of a semiconductor body; a first region of the first conductivity type at the second surface; a second region of a second conductivity type adjacent the first region at the second surface; a field stop region of the first conductivity type between the drift region and second surface; and a first electrode on the second surface directly adjacent to the first region in a first part of the second surface and to the second region in a second part of the second surface. The field stop region includes first and second sub-regions. Over a predominant portion of the first part of the second surface, the second sub-region directly adjoins the first region and includes dopants of the second conductivity type that partially compensate dopants of the first conductivity type.

Abstract: A power semiconductor device includes, an active area that conducts load current between first and second load terminal structures, a drift region, and a backside region that includes, inside the active area, first and second backside emitter zones one or both of which includes: first sectors having at least one first region of a second conductivity type contacting the second load terminal structure and a smallest lateral extension of at most 50 ?m; and/or second sectors having a second region of the second conductivity type contacting the second load terminal structure and a smallest lateral extension of at least 50 ?m. The emitter zones differ by at least of: the presence of first and/or second sectors; smallest lateral extension of first and/or second sectors; lateral distance between neighboring first and/or second sectors; smallest lateral extension of the first regions; lateral distance between neighboring first regions within the same first sector.

Abstract: A power semiconductor device includes: a semiconductor body; a first load terminal structure coupled to the body front side and a second load terminal structure coupled to the body backside; an active area for conducting a load current between the load terminal structures; a drift region having a first conductivity type; a backside region arranged at the backside and including, inside the active area, first and second backside emitter zones. At least one of the backside emitter zones includes: first sectors each having at least one first region of a second conductivity type, the first region arranged in contact with the second load terminal structure and having a smallest lateral extension of at most 50 ?m; and/or second sectors each having a second region of the second conductivity type arranged in contact with the second load terminal structure and having a smallest lateral extension of at least 50 ?m.

Abstract: A power semiconductor diode includes a semiconductor body having first and second main surfaces opposite to each other along a vertical direction. A drift region of a second conductivity type is arranged between an anode region of a first conductivity type and the second main surface. A field stop region of the second conductivity type is arranged between the drift region and the second main surface. A dopant concentration profile of the field stop region along the vertical direction includes a maximum peak. An injection region of the first conductivity type is arranged between the field stop region and the second main surface, with a pn-junction between the injection and field stop regions. A cathode contact region of the second conductivity type is arranged between the field stop region and the second main surface. A first vertical distance between the pn-junction and the maximum peak ranges from 200 nm to 1500 nm.

Abstract: A vertical power semiconductor device is proposed. The vertical power semiconductor device includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface along a vertical direction. The vertical power semiconductor device further includes a drift region in the semiconductor body. The drift region includes platinum atoms. The vertical power semiconductor device further includes a field stop region in the semiconductor body between the drift region and the second main surface. The field stop region includes a plurality of impurity peaks. A first impurity peak of the plurality of impurity peaks has a larger concentration than a second impurity peak of the plurality of impurity peaks. The first impurity peak includes hydrogen and the second impurity peak includes helium.

Abstract: A power semiconductor device includes: a semiconductor body; a first load terminal structure coupled to the body front side and a second load terminal structure coupled to the body backside; an active area for conducting a load current between the load terminal structures; a drift region having a first conductivity type; a backside region arranged at the backside and including, inside the active area, first and second backside emitter zones. At least one of the backside emitter zones includes: first sectors each having at least one first region of a second conductivity type, the first region arranged in contact with the second load terminal structure and having a smallest lateral extension of at most 50 ?m; and/or second sectors each having a second region of the second conductivity type arranged in contact with the second load terminal structure and having a smallest lateral extension of at least 50 ?m.

Abstract: A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.

Abstract: A power semiconductor device includes a semiconductor body having a front side coupled to a first load terminal structure and a backside coupled to a second load terminal structure. A front side structure arranged at the front side is at least partially included in the semiconductor body and defines a front side active region configured to conduct a load current between the load terminal structures. The front side structure includes first and second lateral edge portions and a first corner portion that forms a transition between the lateral edge portions. A drift region included in the semiconductor body is configured to carry the load current. A backside emitter region arranged in the semiconductor body in contact with the second load terminal has a net dopant concentration higher than a net dopant concentration of the drift region.

Abstract: A power semiconductor device includes a semiconductor body having a front side coupled to a first load terminal structure and a backside coupled to a second load terminal structure. A front side structure arranged at the front side is at least partially included in the semiconductor body and defines a front side active region configured to conduct a load current between the load terminal structures. The front side structure includes first and second lateral edge portions and a first corner portion that forms a transition between the lateral edge portions. A drift region included in the semiconductor body is configured to carry the load current. A backside emitter region arranged in the semiconductor body in contact with the second load terminal has a net dopant concentration higher than a net dopant concentration of the drift region.

Abstract: A method for forming a semiconductor device includes incorporating recombination center atoms into a semiconductor substrate. The method further includes, after incorporating the recombination center atoms into the semiconductor substrate, implanting noble gas atoms into a doping region of a diode structure and/or a transistor structure, the doping region being arranged at a surface of the semiconductor substrate.