Abstract: A uniform dosimetry of vapor phase trimethylindium is provided by dissolving trimethylindium in a C.sub.3 -C.sub.5 trialkylindium and bubbling an inert carrier gas through the solution.

Abstract: Trialkylgallium is purified of group II B p-type impurities, particularly Zn, Hg, and Cd, by contacting the trialkylgallium with a metallic gallium-containing melt. Also, trialkylgallium can be produced by contacting a dialkyl group II B compound with a metallic gallium-containing melt.

Abstract: Disclosed is a method for producing, from an aqueous basic composition, a primary arsine having one hydrocarbyl group bonded directly to As, the basic composition having been obtained from the combination of components comprising an alkali metal arsenite and a reactive hydrocarbyl halide by combining the aqueous composition with an acidic, nascent hydrogen-generating reducing agent to produce the primary arsine directly from the aqueous composition without isolation of the primary arsonic acid intermediate.

Abstract: A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.

Abstract: Method for synthesizing alkyl halides of phosphorus, arsenic, or antimony from the corresponding phosphorus, arsenic, or antimony alkyl and phosphorus, arsenic, or antimony halide. An improved synthesis of alkyl phosphorus or arsenic hydrides from the corresponding alkyl phosphorus, arsenic, or antimony halides is also disclosed.

Abstract: The waste product from the synthesis of trimethylgallium is reacted with a hydride selected from an alkali metal hydride, a group IIIA hydride, or a group III hydride to produce dimethylaluminum hydride of high purity.

Abstract: A method is provided for highly pure mono- and dialkylarsines, particularly removing substantially all silicon-containing impurities. A mono- or dialkylarsine is reacted with either an alkali metal or an alkali metal hydrocarbyl, thereby producing an alkali metal alkylarsenide. Silicon, germanium, zinc and other metallic impurities are removed from the alkali alkylarsenide. Mono- and dialkylarsine is then regenerated by reaction of the alkali metal alkylarsenide with a proton donor.

Abstract: Waste material containing substantial amounts of Li(MH.sub.3 R) compounds where M is Al or Ga are deactivated by dissolving and/or dispersing the waste material in a solvent in which ionic deactivation products are soluble and then adding a carbonyl-containing compound which reacts with the Li(MH.sub.3 R) compound.

Abstract: Methods for forming or purifying organometallic compounds of elements of Group III-A of the Periodic Table. An intermediate compound is formed which is an adduct of the desired organometallic compound and a Group I-A or Group II-A compound. The adduct is nonvolatile, so volatile impurities are removed from the adduct by distillation. The adduct is decomposed to release the volatile organometallic compound, which is then distilled away from the nonvolatile remainder of the adduct. The method can be used to produce organometallic compounds which are substantially free of volatile metallic compounds and complexed solvents. A method of separating volatile Group II-B impurities from volatile Group III-A compounds is also disclosed.

Abstract: Organometallic compounds having the formulas: ##STR1## wherein N is selected from phosphorus and arsenic, H is hydride, and X and Y are independently selected from hydride, lower alkyl cyclopentadienyl, and phenyl, except that Y cannot be hydrogen; andMR.sub.xwherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl-substituted cyclopentadienyl, and M is selected from elements of Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table, except carbon, nitrogen, oxygen, and sulfur. The use of these compounds in chemical vapor deposition processes and methods for synthesizing these compounds are also disclosed.

Abstract: Compounds having the molecular formula:MR.sub.xwherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl substituted cyclopentadienyl, at least two of said R substituents are different, and M is an element selected from Groups 2B or 3A of the Periodic Table, Bismuth, Selenium, Tellurium, Beryllium, and Magnesium, but excluding Aluminum, Bismuth, Selenium, and Tellurium if any R is hydride. The hybrid compound is used for metal organic chemical vapor deposition. The invention also includes a metal organic chemical vapor deposition process employing a hybrid of first and second compounds having the above formula, but wherein the R substituents of each compound can be like or unlike and M is selected from Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table except for Carbon, Nitrogen, Oxygen, and Sulfur.

Abstract: A process for the preparation of compounds of the formula RBH.sub.3 CN wherein R is an alkali metal, a quaternary ammonium radical or a phosphonium radical wherein a compound of the formula RCN is treated with a stoichiometric amount or slightly less than a stoichiometric amount of a BH.sub.3 donor is described. The final products are useful as hydrolysis stable reductants and as synthetic intermediates.