Abstract: The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising ?-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of ?-alumina, ?-alumina, ?-alumina, ?-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water.

Abstract: The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system comprising (a) a polishing component selected from the group consisting of an abrasive, a polishing pad, and a combination thereof, (b) an oxidizing agent, (c) an ethylene-oxide containing polymer, and (d) a liquid carrier, and abrading at least a portion of the noble metal with the chemical-mechanical polishing system to polish the substrate.

Abstract: The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising ?-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of ?-alumina, ?-alumina, ?-alumina, ?-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water.

Abstract: The invention provides a method for polishing a substrate comprising a metal in an oxidized form, the method comprising the steps of: (a) providing a substrate comprising a metal in an oxidized form, (b) contacting a portion of the substrate with a chemical-mechanical polishing system comprising: (i) a polishing component, (ii) a reducing agent, and (iii) a liquid carrier, and (c) abrading at least a portion of the metal in an oxidized form to polish the substrate. The reducing agent can be selected from the group consisting of 3-hydroxy-4-pyrones, ?-hydroxy-?-butyrolactones, ascorbic acid, borane, borohydrides, dialkylamine boranes, formaldehyde, formic acid, hydrogen, hydroquinones, hydroxylamine, hypophosphorous acid, phosphorous acid, a metal or metal ions in an oxidation state having a standard redox potential that is less than the standard redox potential of the metal in an oxidized form, trihydroxybenzenes, solvated electrons, sulfurous acid, salts thereof, and mixtures thereof.

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen.

Abstract: The invention provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising a noble metal, the polishing composition comprising (a) an oxidizing agent that oxidizes a noble metal, (b) an anion selected from the group consisting of sulfate, borate, nitrate, and phosphate, and (c) a liquid carrier. The invention further provides a polishing composition and a method of chemically-mechanically polishing a substrate comprising ruthenium, the polishing composition comprising (a) an oxidizing agent that oxidizes ruthenium above the +4 oxidation state, (b) a polishing additive selected from the group consisting of metal sequestering polymers, metal chelators, organic thiols, compounds that reduce ruthenium tetraoxide, lactones, and ?-hydroxycarbonyl compounds.

Abstract: The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP system comprises an abrasive and/or polishing pad, a liquid carrier, and a sulfonic acid compound.

Abstract: The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of about 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen.

Abstract: The invention provides a method of polishing a substrate comprising a noble metal comprising (i) contacting the substrate with a CMP system and (ii) abrading at least a portion of the substrate to polish the substrate. The CMP system comprises an abrasive and/or polishing pad, a liquid carrier, and a sulfonic acid compound.