Abstract: A III-V device and a method for forming the device is provided. The III-V FET device includes: a device layer stack including in a bottom-up direction: a drain layer of n-type GaN, a drift layer of n-type GaN, a channel layer of p-type GaN, and a source layer; a gate extending in a top-down direction into the device layer stack and through the channel layer; and a source contact in contact with the source layer and a drain contact in contact with the drain layer; wherein the source layer is formed by a heterostructure comprising in the bottom-up direction a buffer layer of unintentionally doped GaN and a barrier layer of AlGaN.

Abstract: The present disclosure presents a circuit for converting a pulsed input voltage to a DC output voltage. The circuit comprises input nodes for receiving the pulsed input voltage and output nodes for outputting the DC output voltage. The circuit further comprises a first transistor and a second transistor connected between the input and the output nodes in a synchronous rectifier configuration. The first and second transistors each have a gate connected to a driving circuit configured for alternately charging the gates of the transistors whereby the driving circuit comprises an auxiliary circuit not directly connected to the input nodes and configured for providing a predetermined auxiliary supply voltage to the gates. In an embodiment, the auxiliary circuit comprises a buck DC-DC converter of which an input node is connected to the output nodes and of which an output node is connected to the gates.