Patents by Inventor Benoit Giffard
Benoit Giffard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10613202Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: GrantFiled: November 19, 2018Date of Patent: April 7, 2020Assignee: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Patent number: 10264242Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels.Type: GrantFiled: December 1, 2017Date of Patent: April 16, 2019Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Yvon Cazaux, Benoit Giffard
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Publication number: 20190086519Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: ApplicationFiled: November 19, 2018Publication date: March 21, 2019Applicant: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues Goncalves, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Patent number: 10162048Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: GrantFiled: December 28, 2016Date of Patent: December 25, 2018Assignee: STMicroelectronics (Crolles 2) SASInventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Publication number: 20180167606Abstract: The invention concerns an image sensor comprising: a depth pixel (PZ) having: a detection zone (PD); a first memory (mem1) electrically coupled to the detection zone by a first gate (310); a second memory (mem2) electrically coupled to the detection zone by a second gate (314); and a third memory (mem3) electrically coupled to the detection zone by a third gate (316), wherein the first, second and third memories are each formed by a doped region sandwiched between first and second parallel straight walls (404, 406), the first and second walls of each memory having a conductive core adapted to receive a biasing voltage; and a plurality of 2D image pixels (P1 to P8) positioned adjacent to the depth pixel, wherein the first, second and third memories extend to form at least partial isolation walls between corresponding adjacent pairs of the 2D image pixels.Type: ApplicationFiled: December 1, 2017Publication date: June 14, 2018Inventors: Yvon CAZAUX, Benoît GIFFARD
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Patent number: 9880057Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.Type: GrantFiled: November 3, 2011Date of Patent: January 30, 2018Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Yvon Cazaux, Benoit Giffard, Xavier Hugon
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Publication number: 20170194368Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.Type: ApplicationFiled: December 28, 2016Publication date: July 6, 2017Applicants: STMicroelectronics (Crolles 2) SAS, Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
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Patent number: 9379158Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.Type: GrantFiled: November 29, 2012Date of Patent: June 28, 2016Assignees: THALES, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Xavier Hugon, Norbert Moussy, Jean-Luc Reverchon, Philippe Bois
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Patent number: 9245915Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.Type: GrantFiled: November 3, 2011Date of Patent: January 26, 2016Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Yvon Cazaux, Norbert Moussy
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Patent number: 9040916Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.Type: GrantFiled: November 3, 2011Date of Patent: May 26, 2015Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Yvon Cazaux, Benoit Giffard, Xavier Hugon
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Publication number: 20140346356Abstract: This optical detector unit is a hybrid unit operating in a given wavelength range and includes, superposed, a first optical detector comprising detecting elements formed in a semiconductor structure, each detecting element being intended for converting a flux of incident photons into an electrical signal; and a first read out circuit, for reading the electrical signal from each detecting element. The optical detector unit furthermore has an imaging system with a second optical detector intended for increasing the operating wavelength range of the optical detector unit and a second read out circuit for reading the electrical signals from the detecting elements of the second optical detector. The first and second read out circuit are integrated together, so as to form a common read out circuit.Type: ApplicationFiled: November 29, 2012Publication date: November 27, 2014Applicants: Thales, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Xavier Hugon, Norbert Moussy, Jean-Luc Reverchon, Philippe Bois
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Patent number: 8835924Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.Type: GrantFiled: July 5, 2010Date of Patent: September 16, 2014Assignee: Commissariat a l'energie atomique et aux energies AlternativesInventors: Pierre Gidon, Benoit Giffard, Norbert Moussy
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Patent number: 8817150Abstract: A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.Type: GrantFiled: June 3, 2011Date of Patent: August 26, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Benoit Giffard, Yvon Cazaux
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Publication number: 20130284889Abstract: The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.Type: ApplicationFiled: November 3, 2011Publication date: October 31, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Benoit Giffard, Yvon Cazaux, Norbert Moussy
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Publication number: 20130214161Abstract: The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.Type: ApplicationFiled: November 3, 2011Publication date: August 22, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Yvon Cazaux, Benoit Giffard, Xavier Hugon
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Publication number: 20130214160Abstract: The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.Type: ApplicationFiled: November 3, 2011Publication date: August 22, 2013Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Yvon Cazaux, Benoit Giffard, Xavier Hugon
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Patent number: 8451354Abstract: An time-delay-integration image sensor comprises a matrix of photosensitive pixels organized in rows and columns, a first matrix of memory cells associated with control and adding means to store accumulated brightness levels of several rows of pixels in a row of memory cells. The first memory cell matrix is provided with the control and adding means to store in its rows accumulated brightness levels of the rows of a first half of the pixel matrix. The sensor comprises a second memory cell matrix associated with the control and adding means to store accumulated brightness levels of the rows of the second half of the pixel matrix in a row of the second memory cell matrix. Means are provided for adding the levels accumulated in a row of the first memory cell matrix to the levels accumulated in a corresponding row of the second memory cell matrix.Type: GrantFiled: May 9, 2011Date of Patent: May 28, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Yvon Cazaux, Benoit Giffard
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Publication number: 20120119264Abstract: A basic device for an image sensor includes a photodiode consisting of a doped area having a first type of conductivity and formed at the surface of a semiconductor substrate having a second type of conductivity, adapted to be biased at a first reference voltage, wherein the photodiode is combined with a device for the transfer, multiplication and insulation of charges, the photodiode being a fully depleted one and including, at the surface of the doped area having a first type of conductivity, a strongly doped region having the second type of conductivity and adapted to be biased at a second reference voltage.Type: ApplicationFiled: May 11, 2010Publication date: May 17, 2012Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIE ALTERNATIVESInventors: Yvon Cazaux, Benoít Giffard
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Publication number: 20120112247Abstract: A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of charges. The photogeneration region has an insulated gate mounted thereon, which is adapted to be alternately biased at a first voltage and at a second voltage, the insulated gate being made of a low-absorption material.Type: ApplicationFiled: May 11, 2010Publication date: May 10, 2012Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Yvon Cazaux, Benoît Giffard
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Publication number: 20120097946Abstract: A photo-detecting device including a plurality of pixels, each including at least one alternate stack of photodiodes and electrically conducting electrodes. Each photodiode includes one intrinsic amorphous semiconductor layer in contact with one doped amorphous semiconductor layer distinct from the amorphous semiconductor layers in other photodiodes, and is arranged between two electrodes. Each pair of photodiodes includes one of the electrodes arranged between photodiodes. In each pixel: each electrode includes an electrically conducting portion not superposed on other electrodes of the pixel and electrically connected to one interconnection hole filled with an electrically conducting material; and portions of an electrically conducting material are superposed approximately on each of non-superposed portions of electrodes.Type: ApplicationFiled: July 5, 2010Publication date: April 26, 2012Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Pierre Gidon, Benoit Giffard, Norbert Moussy