Patents by Inventor Bernard R. Wernsman

Bernard R. Wernsman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9322720
    Abstract: An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000° C. and fast (>1 MeV) neutron fluencies of more than 1018 n/cm2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: April 26, 2016
    Assignee: U.S. Department of Energy
    Inventors: Bernard R. Wernsman, Raymond J. Blasi, Bernhard R. Tittman, David A. Parks
  • Publication number: 20160018270
    Abstract: An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000° C. and fast (>1 MeV) neutron fluencies of more than 1018 n/cm2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.
    Type: Application
    Filed: February 21, 2014
    Publication date: January 21, 2016
    Applicant: UNITED STATES DEPARTMENT OF ENERGY
    Inventors: Bernard R. Wernsman, Raymond J. Blasi, Bernhard R. Tittman, David A. Parks
  • Patent number: 7202411
    Abstract: A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.
    Type: Grant
    Filed: May 1, 2003
    Date of Patent: April 10, 2007
    Assignee: United States of America Department of Energy
    Inventor: Bernard R. Wernsman
  • Patent number: 6509669
    Abstract: Microminiature thermionic converters (MTCs) manufactured using MEMS manufacturing techniques including chemical vapor deposition, and having high energy-conversion efficiencies and variable operating temperatures. The MTCs of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs of the present invention have maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: January 21, 2003
    Assignee: Sandia Corporation
    Inventors: Donald B. King, Laurence P. Sadwick, Bernard R. Wernsman
  • Patent number: 6411007
    Abstract: Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: June 25, 2002
    Assignee: Sandia Corporation
    Inventors: Donald B. King, Laurence P. Sadwick, Bernard R. Wernsman
  • Patent number: 6407477
    Abstract: Modules of assembled microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures manufactured using MEMS manufacturing techniques including chemical vapor deposition. The MTCs incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices and modules can be fabricated at modest costs.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: June 18, 2002
    Assignee: Sandia Corporation
    Inventors: Donald B. King, Laurence P. Sadwick, Bernard R. Wernsman
  • Patent number: 6294858
    Abstract: Microminiature thermionic converts (MTCs) having high energy-conversion efficiencies and variable operating temperatures. Methods of manufacturing those converters using semiconductor integrated circuit fabrication and micromachine manufacturing techniques are also disclosed. The MTCs of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. Existing prior art thermionic converter technology has energy conversion efficiencies ranging from 5-15%. The MTCs of the present invention have maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.
    Type: Grant
    Filed: February 25, 1999
    Date of Patent: September 25, 2001
    Assignee: Sandia Corporation
    Inventors: Donald B. King, Laurence P. Sadwick, Bernard R. Wernsman