Patents by Inventor Bernard Scanlan

Bernard Scanlan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
    Patent number: 8629065
    Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: January 14, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan, Vitali Soukhoveev
  • Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)
    Publication number: 20110108954
    Abstract: A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE. Various alternative methods are disclosed.
    Type: Application
    Filed: November 6, 2009
    Publication date: May 12, 2011
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Philippe Spiberg, Hussein S. El-Ghoroury, Alexander Usikov, Alexander Syrkin, Bernard Scanlan, Vitali Soukhoveev