Abstract: The integrated microelectronics component comprises an electric conductor forming a transmission line element for a radio frequency electromagnetic wave. This electric conductor is surrounded at least partially by a preferably closed magnetic circuit, formed at least by superposition of a layer of ferromagnetic material having a saturation magnetization value greater than or equal to 800 kA/m and of a layer of magnetic material. The layer of magnetic material then generates a uniaxial magnetic anisotropy in the adjacent ferromagnetic layer. A high magnetization can then be combined with a high anisotropy, thus enabling operation in high frequency ranges, for example about 5 to 20 GHz.

Abstract: The closed magnetic core is designed for use for an integrated micro-inductor. The magnetic core has the form of a spiral preferably substantially rectangular spiral. The spiral comprises two ends joined to one another by a closing segment. The magnetic core can be formed by a plurality of branches and at least two branches can be arranged in different parallel planes. In addition, two branches can have different thicknesses. The magnetic core can comprise an air-gap.

Abstract: The coil comprises a plurality of non-joined turns, each turn comprising a rectangular bottom flat section in a bottom plane and a rectangular top flat section in a top plane and two rising sections. The turns fill almost all of the enveloping surface of the coil, a minimum isolating gap separating the adjacent turns. The top and bottom sections corresponding to one and the same turn are aligned with respect to one another and have a larger width than the width of the corresponding rising sections. The turns constitute a plurality of substantially parallel coil branches, rising sections of two adjacent branches arranged between the two adjacent branches being arranged alternately in a single plane.

Abstract: The magnetic device according to the invention is integrated on a substrate and comprises at least one element made of piezoelectric material associated with actuating electrodes, and at least one magnetic element able to deform under the stress of the piezoelectric material element. The device has the form of a beam movable with respect to the substrate, and comprises two transverse parts of predetermined width, along a reference longitudinal axis. The piezoelectric material element is formed by at least a part of a transverse part and each transverse part comprises a zone for mechanical anchoring on the substrate. The transverse parts are connected by at least one central branch, of predetermined width, on which the magnetic element is arranged.

Abstract: The integrated microelectronics component comprises an electric conductor forming a transmission line element for a radio frequency electromagnetic wave. This electric conductor is surrounded at least partially by a preferably closed magnetic circuit, formed at least by superposition of a layer of ferromagnetic material having a saturation magnetization value greater than or equal to 800 kA/m and of a layer of magnetic material. The layer of magnetic material then generates a uniaxial magnetic anisotropy in the adjacent ferromagnetic layer. A high magnetization can then be combined with a high anisotropy, thus enabling operation in high frequency ranges, for example about 5 to 20 GHz.

Abstract: A thin soft magnetic film combines a high magnetization with an insulating character. The film is formed by nitriding Fe-rich ferromagnetic nanograins immersed in an amorphous substrate. A selective oxidation of the amorphous substrate is then performed. The result is a thin, insulating, soft magnetic film of high magnetization. Many types of integrated circuits can be made which include a component using a membrane incorporating the above-mentioned thin film.