Abstract: A semiconductor bridge die may have an “H-design” or “trapezoidal” configuration in which a center bridge segment is flanked by one or more angled walls on each side of the bridge segment. Each wall is plated with a conductive material, thereby providing a continuous conductive path across the top surface of the die. A bottom surface of the die may be connected to a top surface of a header by epoxy in various configurations. The plated angled walls facilitate the solderable connection of the walls to a plated top surface of each of several pins on a top surface of the header, thereby providing a continuous electrical connection between the pins and the die. Also, a method is provided for manufacturing a semiconductor bridge die in accordance with the various embodiments of the die.

Abstract: A semiconductor bridge die may have an “H-design” or “trapezoidal” configuration in which a center bridge segment is flanked by one or more angled walls on each side of the bridge segment. Each wall is plated with a conductive material, thereby providing a continuous conductive path across the top surface of the die. A bottom surface of the die may be connected to a top surface of a header by epoxy in various configurations. The plated angled walls facilitate the solderable connection of the walls to a plated top surface of each of several pins on a top surface of the header, thereby providing a continuous electrical connection between the pins and the die. Also, a method is provided for manufacturing a semiconductor bridge die in accordance with the various embodiments of the die.

Abstract: This invention relates to a solid-state or integrated circuit-type igniter die (10) having a bridge (18) that is formed on a non-planar surface of a substrate (12), and which therefore has a non-planar configuration. Igniter die (10), according to this invention therefore has a three-dimensional configuration and, preferably, a configuration that can enclose a reactive material (26) therein. In a typical embodiment, the bridge (18) of an igniter element of this invention has a tubular configuration. Reactive material (26) is disposed within the interior of the tube (14) and a charge of electric current is flowed through the tube (14) from o the other to form a plasma that initiates the remaining reactive material (26).

Abstract: A titanium semiconductor bridge igniter (10, 10?) has a substrate (12, 12?) on which is carried a pair of spaced-apart pads (18a, 18b) connected by a bridge (20). The pads (18a, 18b) and bridge (20) are made of a layer of polysilicon (22) or crystalline silicon (22?) covered by a layer of titanium (24). Metal lands (26a, 26b) overlie the pads (18a, 18b) but leave the bridge (20) exposed so that it can be placed in contact with an energetic material charge (42). A method of stabilizing the titanium semiconductor bridge igniter (10, 10?) against temperature-induced variations in electrical resistance of bridge (20) includes heating the titanium semiconductor bridge igniter (10, 10?) to an elevated temperature, e.g., from about 37° C. to about 250° C.

Abstract: A titanium semiconductor bridge igniter (10, 10?) has a substrate (12, 12?) on which is carried a pair of spaced-apart pads (18a, 18b) connected by a bridge (20). The pads (18a, 18b) and bridge (20) are made of a layer of polysilicon (22) or crystalline silicon (22?) covered by a layer of titanium (24). Metal lands (26a, 26b) overlie the pads (18a, 18b) but leave the bridge (20) exposed so that it can be placed in contact with an energetic material charge (42). A method of stabilizing the titanium semiconductor bridge igniter (10, 10?) against temperature-induced variations in electrical resistance of bridge (20) includes heating the titanium semiconductor bridge igniter (10, 10?) to an elevated temperature, e.g., from about 37° C. to about 250° C.

Abstract: This invention relates to a solid-state or integrated circuit-type igniter die (10) having a bridge (18) that is formed on a non-planar surface of a substrate (12), and which therefore has a non-planar configuration. Igniter die (10), according to this invention therefore has a three-dimensional configuration and, preferably, a configuration that can enclose a reactive material (26) therein. In a typical embodiment, the bridge (18) of an igniter element of this invention has a tubular configuration. Reactive material (26) is disposed within the interior of the tube (14) and a charge of electric current is flowed through the tube (14) from one end to the other to form a plasma that initiates the remaining reactive material (26).

Abstract: A semiconductor bridge igniter device (10) having integral voltage anti-fuse protection provides an electric circuit including a first firing leg and, optionally, a monitor leg. The first firing leg includes a first semiconductor bridge having semiconductor pads (14a, 14b) separated and connected by a bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b) so that an electrical potential applied across the metallized lands (16a, 16b) will cause sufficient current to flow through the firing leg of the electric circuit to release energy at the bridge (14c). A dielectric layer (15) is interposed within the first firing leg and has a breakdown voltage equal to a selected threshold voltage (Vth) and therefore provides protection against the device functioning at voltages below the threshold voltage (Vth). A continuity monitor leg of the electric circuit is comprised of either a fusible link (34) or a resistor (36) disposed in parallel to the first firing leg.

Abstract: A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprise a titanium base layer (18), a titanium-tungsten intermediate layer (20) and a tungsten top layer (22). This multilayer construction is simple to apply, provides good adhesion to the semiconductor (14) and enhanced semiconductor bridge characteristics, and avoids the electromigration problems attendant upon use of aluminum metallized lands under severe conditions of no-fire tests and very low firing voltage or current levels. The semiconductor (14) may optionally be covered by a cap or cover (117) of a stratified metal layer similar or identical to the metallized lands (16a, 16b).

Abstract: A semiconductor element, e.g., a semiconductor bridge element (30), is surface mountable as it has thereon a metal layer comprised of metal lands (44) and electrical connectors 45a, 45b and 45c) which terminate in flat electrical contacts (47) on the back surface (35) of the element. Optionally, the element may also contain back-to-back zener diodes (46a, 46b) to provide unbiased protection against electrostatic discharge. When configured as a semiconductor bridge element (30), the element, among other uses, finds use as an igniter (13) for an explosive element. The elements may be made by a method including a cross-cut technique in which grooves (60) cut in the front surface (58) of a silicon wafer substrate (56) intersect grooves (64) cut in the back surface (62) of the wafer. The intersecting grooves (60,64) form a plurality of apertures in the wafer (56), the apertures and grooves helping to define a plurality of dies having side surfaces.

Abstract: A semiconductor bridge igniter device (10) having integral voltage anti-fuse protection provides an electric circuit including a firing leg and, optionally, a monitor leg. The firing leg comprises semiconductor pads (14a, 14b) separated and connected by a bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b) so that an electrical potential applied across the metallized lands (16a, 16b) will cause sufficient current to flow through the firing leg of the electric circuit to release energy at the bridge (14c). A dielectric layer (15) is interposed within the firing leg and has a breakdown voltage equal to a selected threshold voltage (V.sub.th) and therefore provides protection against the device functioning at voltages below the threshold voltage (V.sub.th). A continuity monitor leg of the electric circuit is comprised of either a fusible link (34) or a resistor (36) disposed in parallel to the firing leg.