Abstract: A monolithic laser configuration has a substrate, a laser diode disposed on the substrate for generating a light beam, a photodetector disposed on the substrate in the path of the light beam for receiving at least one part of the light beam, and a deflection device disposed on the substrate for deflecting the light beam substantially perpendicularly to the substrate surface. The monolithic laser configuration can advantageously be used in a coupling module with a plastic SMT housing of a standard configuration, it being possible to produce the optical access through an opening in the leadframe of the coupling module.

Abstract: A semiconductor laser chip has a semiconductor laser element and a beam shaper integrated into the semiconductor laser chip and serving for shaping a laser beam emitted by the semiconductor laser element.

Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

Abstract: A monolithic laser configuration has a substrate, a laser diode disposed on the substrate for generating a light beam, a photodetector disposed on the substrate in the path of the light beam for receiving at least one part of the light beam, and a deflection device disposed on the substrate for deflecting the light beam substantially perpendicularly to the substrate surface. The monolithic laser configuration can advantageously be used in a coupling module with a plastic SMT housing of a standard configuration, it being possible to produce the optical access through an opening in the leadframe of the coupling module.

Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

Abstract: Semiconductor laser chip and method for fabricating a semiconductor laser chip A semiconductor laser chip has a semiconductor laser element and a beam shaper integrated into the semiconductor laser chip and serving for shaping a laser beam emitted by the semiconductor laser element.

Abstract: A monolithically integrated combination of a laser diode and a modulator is provided, in which one region of a common active layer structure is used for the laser and an adjacent region of that layer structure is used for the modulator, and in which the layer structure is an MQW structure with asymmetric potential wells decoupled from one another. The material compositions in the potential wells each have the smallest energy bandgap on the n-type side and are matched to the layer structure in such a way that, when the potential difference is applied in the reverse bias direction, a blue shift of the absorption edge beyond the laser wavelength takes place.

Abstract: In the DFB laser diode structure, having complex optical grating coupling, the grating has a layer (52) made from volumetric index semiconductor material, and a layer (53) made from volumetric absorption semiconductor material, the two layers (52, 53) being situated one above another and not being phase-shifted with respect to one another.