Abstract: A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2.times. what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450.degree. C.) during the deposition process.

Abstract: Electrically conducting vias and lines are created by a three step process. First, a controlled amount of a soft, low resistivity metal (12) is deposited in a trench or hole to a point below the top surface of the dielectric (10) in which the trench or hole is formed. Subsequently, the low resistivity metal (12) is overcoated with a hard metal (16) such as CVD tungsten. Finally, chemical-mechanical polishing is used to planarize the structure. The hard metal (16) serves the function of protecting the low resistivity metal (12) from scratches and corrosion which would ordinarily be encountered if the low resistivity metal were subjected to the harsh chemical-mechanical polishing slurries. An ideal method for partially filling trenches or holes in a substrate is by sputtering at elevated temperatures such that metallization at the bottom of a trench or hole separates from metallization on a top surface adjacent the trench or hole.