Abstract: A control device for monitoring a functioning of a semiconductor component during its operation may comprise an input interface configured for receiving a sensor signal corresponding to a contact-less determined temperature distribution on a surface of the semiconductor component, and an evaluation device configured to determine, based on the sensor signal, whether the temperature distribution fulfills a predefined decision criterion corresponding to an operation of the semiconductor component outside a normal operating state. An output interface is designed to issue an emergency signal when the decision criterion is fulfilled, wherein the emergency signal triggers the execution of an emergency measure.

Abstract: A control device for monitoring a functioning of a semiconductor component during its operation may comprise an input interface configured for receiving a sensor signal corresponding to a contact-less determined temperature distribution on a surface of the semiconductor component, and an evaluation device configured to determine, based on the sensor signal, whether the temperature distribution fulfills a predefined decision criterion corresponding to an operation of the semiconductor component outside a normal operating state. An output interface is designed to issue an emergency signal when the decision criterion is fulfilled, wherein the emergency signal triggers the execution of an emergency measure.

Abstract: A description is given of a method for the pulsed control of a transistor which has a control terminal and a load path. The load path of the transistor is connected in series with a load. A control circuit is provided for a transistor. In the method, the transistor is controlled with a control pulse of a first type, which has a first control level at least for a first time duration, before a control pulse of a second type, which has a second control level, which is higher in comparison with the first control level. A voltage across the load path of the transistor is evaluated and the pulsed control is terminated if the voltage across the load path exceeds a predefined threshold value.

Abstract: A description is given of a method for the pulsed control of a transistor which has a control terminal and a load path. The load path of the transistor is connected in series with a load. A control circuit is provided for a transistor. In the method, the transistor is controlled with a control pulse of a first type, which has a first control level at least for a first time duration, before a control pulse of a second type, which has a second control level, which is higher in comparison with the first control level. A voltage across the load path of the transistor is evaluated and the pulsed control is terminated if the voltage across the load path exceeds a predefined threshold value.