Abstract: For the continuous melting of silicon granulate for a band drawing method, a melt reservoir in communication with the melt crucible based on the principle of communicating vessels, is provided in the form of a thermally insulated, annular crucible in whose center axis a rotary plate to be centrifugally accelerated is arranged, the speed thereof being continuously varied. Two pipe parts connected to one another at an angle between approximately 45.degree. to about 90.degree. are secured on the rotary plate, the one, vertical pipe part thereof serving as admission in the rotational axis and the other pipe part thereof forming the acceleration path for the granulate particles in the direction toward the annular melt crucible. On the basis of this arrangement, a uniform delivery and melting of the granulate particles in the melt surface is achieved and, thus, a continuous silicon band drawing with uniform layer thickness is enabled. The arrangement is used in the manufacture of silicon bands for solar cells.

Abstract: A method and device for the complete emptying of flat quartz tanks or crucibles filled with silicon melt is provided. The apparatus includes an open outlet nozzle located in a floor of the tank and a tube-shaped, rod-shaped, or channel-shaped member composed of a material that is well-wettable by silicon melt that is brought into contact with the outlet nozzle after the conclusion of the drawing process. The member is in fluid communication with a collecting vessel. The outlet nozzle is so constructed and arranged that the silicon melt adjacent at the nozzle aperture is prevented from running out during the band drawing due to the curvature pressure of its downwardly, convexly arced surface. The apparatus can be used in continuous, horizontal band-drawing of silicon for solar cells.

Abstract: A method and apparatus for manufacturing tape-shaped silicon bodies for solar cells wherein a tape-shaped reticulate carrier is passed vertically downwardly through a drawing nozzle including a slot which is full of molten silicon. The drawing nozzle is located above the level of molten silicon in a vat containing such molten silicon, and capillary means are provided to deliver the molten silicon from the vat into the drawing nozzle to fill the same with the molten silicon.