Patents by Inventor Bernhard Holländer

Bernhard Holländer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a strained layer on a substrate and layered structure
    Patent number: 8048220
    Abstract: The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer, relaxing the layer, producing directional off-sets in the layer to be strained. A layered structure produced in this manner has triaxially strained layers.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: November 1, 2011
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Siegfried Mantl, Bernhard Holländer, Dan Mihai Buca
  • Method for producing a strained layer on a substrate and corresponding layer structure
    Patent number: 7416965
    Abstract: The invention relates to a method for producing a layer structure comprising a strained layer on a substrate. The inventive method comprises the steps of producing a defect area in a layer adjoining the layer to be strained, and relaxing at least one layer adjoining the layer to be strained. The defect area is especially produced in the substrate. Additional layers can be epitactically grown. Layer structures so produced are especially suitable for producing various types of components.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: August 26, 2008
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Siegfried Mantl, Bernhard Holländer
  • Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers
    Patent number: 6464780
    Abstract: The invention relates to a method for the production of a monocrystalline layer on a substrate with a non-adapted lattice. To this end, a monocrystalline substrate with a buried amply defective layer and a monocrystalline layer produce thereon are used. The buried amply defective layer can be produced by hydrogen implantation.
    Type: Grant
    Filed: August 29, 2000
    Date of Patent: October 15, 2002
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Siegfried Mantl, Bernhard Holländer, Ralf Liedtke