Abstract: A method of semiconductor junction formation in RTA process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being driven form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers operative to provide annealing and diffusion operation. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the penetration the dopant species.

Abstract: A method of semiconductor junction formation in RTA process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being driven form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers operative to provide annealing and diffusion operation. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the penetration the dopant species.

Abstract: A method of semiconductor junction formation in Laser diffusion process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being diffused form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the diffusion of the dopant species.

Abstract: A method of semiconductor junction formation in Laser diffusion process for fabrication of solar cells provides for delivery of inert gases in the vicinity of the Si wafer while dopant species are being diffused form a dopant source into the surface of the wafer irradiated by a laser beam. The laser beam is emitted by CW- or pulsed operated lasers including fiber lasers. Optionally, the passivation of the surface and formation of the antireflection coating are performed simultaneously with the diffusion of the dopant species.

Abstract: A solar electric module having a layered construction including a light redirection layer and light transmitting materials that encapsulate the solar cells of the module. The solar electric module provides for weight mitigation and/or moisture control features. The weight mitigation feature provides for the use of weight mitigation layers to reduce the volume of glass in a transparent top cover, while providing an increased distance between the light redirection layer and the transparent top cover. The increased distance supports increased spacing between solar cells. The moisture control feature provides perforations in a metallic coating layer and/or light redirection layer to support migration of moisture into and out of the encapsulating layers. The light redirection layer can be an asymmetric redirection layer (for example, light scattering layer) or a symmetric redirection layer (for example, a diffractive optical element).

Abstract: An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.

Abstract: An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in an aqueous solution comprising a boric acid and polyvinyl alcohol, and (2) heating the solution so as to evaporate water and form a polymerized polyvinyl alcohol coating containing boron on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of intrinsic silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.

Abstract: A diffractive structure for responding to incident radiation includes a substrate having a diffractive surface and a coating layer disposed over the diffractive surface, the coating layer having an index of refraction substantially different from that of the substrate. The diffractive surface comprises a three-dimensional pattern selected to diffract incident radiation with substantial efficiency into one or more diffraction orders other than the first order and to redirect the diffracted radiation from the structure in at least two directions at angles that are greater than a critical angle required for total internal reflection. In application of the diffractive structure to solar cell modules, a diffractive structure disposed in spaces between plural solar cells redirects incident radiation from the area within the spaces onto the solar cells, thus concentrating solar radiation onto the cells.

Abstract: An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coating containing borosilicate on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.

Abstract: A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a relatively high density plasma which is produced at atmospheric pressure. The plasma is focused magnetically and said stack is rotated so as to expose successive edge portions of said wafers to said plasma.

Abstract: An inexpensive method of coating silicon shot with boron atoms comprises (1) immersing silicon shot in a boron dopant spin-on solution comprising a borosilicate, a polymer precursor, and a volatile solvent, and (2) removing the solvent so as to leave a polymeric coating containing borosilicate on the shot. A precise amount of this coated shot may then be mixed with a measured quantity of silicon pellets and the resulting mixture may then be melted to provide a boron-doped silicon melt for use in growing p-type silicon bodies that can be converted to substrates for photovoltaic solar cells.

Abstract: Apparatus for use in edge etching a plurality of flat semiconductor wafers comprises a carousel releasably holding a plurality of carriers that are adapted to support a horizontal stack of wafers at selected points along the edges of the wafers. The carousel is adapted to be releasably attached to a dual axis rotary drive mechanism in a reaction chamber containing a plasma jet stream generator. The drive mechanism is operated to cause axis rotation of the carriers over the plasma jet stream, with selected edges of the wafers being directly exposed to and etched by the plasma. The etching process is interrupted to permit the carriers to be removed from the carousel for reorientation of the wafers. Thereafter, the etching process is resumed, whereby other edges of the wafers are subjected to etching by the plasma jet stream.

Abstract: An improved method and apparatus for laser cutting a thin fragile material using a high velocity assist gas to remove molten material and laser-generated debris is characterized by the high velocity assist gas exerting substantially zero force on the material being cut. An improved form of gas assist laser gas assist nozzle is shaped to achieve a supersonic gas flow velocity that is used advantageously to effect rapid removal of ejected gas and other materials.

Abstract: A method of cutting thin bodies of silicon so as to minimize edge damage comprises traversing said bodies with the beam of a pulsed laser in a vacuum or in the presence of forming gas or a noble gas.

Abstract: A deformable substrate chuck includes a deformable mounting plate supported by a plurality of individually controllable variable-length actuators. Each actuator is controllable to vary the height of the portion of the deformable mounting plate which it supports. A chamber within the mounting plate accessible through a vacuum port can be evacuated to hold a substrate such as a semiconductor wafer or a flat panel display to a porous top surface of the mounting plate. An optical sensing system senses the shape of the substrate and generates control signals used to control the lengths of the variable-length actuators to control the shape of the substrate.