Abstract: Individually operable laser diodes in an array are associated with optical fibers for treatment of a material. Each laser diode has a generally Gaussian or similar profile. A guide block receives optical fiber terminal distal ends and enables irradiation of a surface for treatment with overlapping profiles. A control system controls individual laser diodes to achieve desired illumination profiles for a given process. The process is performed in a suitable environment which may include a vacuum system, controlled gaseous environment, or in a doping medium such as a surface coating or even a liquid. Optional relay optics interposed between the terminal distal ends and the treatment material allows distant relaying and reimaging. An optical isolator assembly may be interposed between the relay optics and the treatment material. The system and related methods allow direct irradiation from laser diodes to treat materials.

Abstract: A fiber laser system enables a method for treating a semiconductor material by preheating a wafer for laser annealing and gas immersion laser doping by a laser source. A long wave length fiber laser having a Gaussian or similar profile is applied in a full-width ribbon beam across an incident wafer. Preferably the wavelength is greater than 1 ?m (micron) and preferably a Yb doped fiber laser is used. The process is performed in a suitable environment which may include doping species. The process ensures the temperature gradient arising during processing does not exceed a value that results in fracture of the wafer while also reducing the amount of laser radiation required to achieve controlled surface melting, recrystallization and cooling.

Abstract: Individually operable laser diodes in an array are associated with optical fibers for treatment of a material. Each laser diode has a generally Gaussian or similar profile. A guide block receives optical fiber terminal distal ends and enables irradiation of a surface for treatment with overlapping profiles. A control system controls individual laser diodes to achieve desired illumination profiles for a given process. The process is performed in a suitable environment which may include a vacuum system, controlled gaseous environment, or in a doping medium such as a surface coating or even a liquid. Optional relay optics interposed between the terminal distal ends and the treatment material allows distant relaying and reimaging. An optical isolator assembly may be interposed between the relay optics and the treatment material. The system and related methods allow direct irradiation from laser diodes to treat materials.

Abstract: A fiber laser system enables a method for treating a semiconductor material by preheating a wafer for laser annealing and gas immersion laser doping by a laser source. A long wave length fiber laser having a Gaussian or similar profile is applied in a full-width ribbon beam across an incident wafer. Preferably the wavelength is greater than 1 ?m (micron) and preferably a Yb doped fiber laser is used. The process is performed in a suitable environment which may include doping species. The process ensures the temperature gradient arising during processing does not exceed a value that results in fracture of the wafer while also reducing the amount of laser radiation required to achieve controlled surface melting, recrystallization and cooling.

Abstract: A controlled gas environment is provided against a surface area of a semiconductor wafer for performing processes on the area in the fabrication of integrated circuits thereon, including processes of deposition, impurity implantation, etching, ablation, and other radiation induced chemical processes involving the gas atmosphere by maintaining a continuous gas flow over the area and a portion of the surrounding area of the wafer surface covered by an enclosure that is suspended on the surface on a film of the flowing gas, the pressure, temperature and composition of the gas atmosphere against the surface area being controlled to meet the requirements of each processing step and/or to carry away particles while the gas seal is maintained.

Abstract: Intense far-ultraviolet laser radiation is applied to a workpiece in performance of processes in the fabrication of integrated circuits, including processes of ablation, deposition, impurity implantation and radiation induced chemical processes. Other processes where intense far-ultraviolet laser radiation is applied include hardening and annealing a workpiece by exposure to the radiation. Particular embodiments of the invention herein enables selective removal of a polymer film on a semiconductor substrate by ablative photodecomposition (APD) using intense far-ultraviolet, or shorter wave length, radiation from a pulsed laser requires focusing the laser radiation to provide sufficiently high fluence of laser light energy to ablate a selected area of the polymer to a useful depth in a reasonable time, sometimes referred to as the threshold of fluence of the laser pulses required to produce effective APD of the polymer.