Abstract: The invention relates to an electro-optical component with a millimeter or submillimeter antenna and an optical receiver. In order, in the case of such an electro-optical component, to achieve the situation in which millimeter waves or submillimeter waves can be generated particularly well, the invention provides for the optical receiver to be an electroabsorption modulator.

Abstract: An optoelectronic component has at least one light source which is monolithically integrated in a semiconductor material, in particular having a laser diode. At least one photodetector for measuring the light output power is coupled to the light source via an active layer of the light source. At least one active layer or a modulator layer has a multiple quantum well structure formed with at least two quantum well types and/or a quantum dot structure. In the production method the active layer for the light source is first grown on a substrate and a photodetector structure is then grown on the active layer for the light source. The novel optoelectronic component is very compact and can be regulated efficiently.

Abstract: An optoelectronic module has at least two components, which are coupled via an optical waveguide, in a monolothically integrated structure. At least two of the components of the module are coupled in series to form an associated PINIP structure, with at least one active layer of the waveguide having a multiquantum well structure, in particular in at least two quantum well types. The optoelectronic module can be driven quite efficiently.

Abstract: An optoelectronic component has at least one monolithically integrated laser diode and at least one monolithically integrated optical waveguide. At least one of the optical waveguides is functionally coupled to at least two electro-absorption modulators, and at least one electro-absorption modulator is assigned at least one optical amplifier. The assembly forms an active electro-optical device that can be driven efficiently.

Abstract: Opto-electronic module, whereby opto-electronic, active components are manufactured as epitaxially grown layer sequence on the upper side of a substrate, and whereby the waveguide layers present in these components are connected to one another and/or to external terminal surfaces for external connection by passive waveguides that are composed of a material that differs from all semiconductor constituents of the active components.

Abstract: An opto-electronic component with two MQW structures having different functions, wherein the layer sequences that form these MQW structures are grown in a single epitaxy process of uniform layers in every layer plane. In an embodiment, a laser diode-modulator combination is provided wherein the MQW layer sequence of the laser is preferably arranged within the MQW layer sequence of the modulator.

Abstract: An LED having improved light emission characteristics by allowing radiation generated to be guided towards the side faces of the LED by means of a relatively thick waveguide comprised of a transmissive material, specifically in such a way that as many modes as possible can propagate.

Abstract: An optoelectronic device for optical coupling between different dimensioned waveguides has an arrangement forming a narrow waveguide and an arrangement forming a broad waveguide, which extend parallel to one another and are superimposed with each other to provide a superimposing wave guidance in a region and transverse dimensions of the narrow waveguide are continuously reduced to zero in the shape of a taper in a second region so that only the broad wave guidance on the basis of the broad ridge fashioned in the broad waveguide are present in a region adjoining this second region having the taper.

Abstract: An optoelectronic device for outfeed and infeed of radiation into and out of a waveguide having the waveguide disposed on a substrate and provided with a mirror for reflecting the light through the substrate. The device includes at least a plano-convex lens being integrated on a surface of the substrate lying opposite the waveguide. In one embodiment, a second substrate is secured on the first substrate and one of the substrates has a recess for receiving the lens and the second substrate can have a recess aligned with the lens for receiving an end of an optical fiber.

Abstract: A semiconductor laser arrangement is composed of two quasi-index guided laser diodes each with a light intensifying layer arranged in a plane shared by both diodes. The characteristics of the laser diodes are such that one polarization state predominates in one diode, while the other polarization state predominates in the other diode. Any desired degree of polarization dependency of the gain is set by the ratio of the operating currents of the two diodes, so that isotropic amplification can be achieved.

Abstract: A laser diode array includes ridges formed in a cover layer forming an upper layer of a semiconductor body, the ridges being provided with separate contacts to produce laser active stripes in an active layer situated between a substrate and the cover layer. The thickness of the cover layer between the ridges is such that lateral coupling is achieved, while the thickness of the cover layer in the region adjoining the outside edges of the outer ridges is small enough so that lateral emission losses are low as the result of quasi-index guidance based on the metal clad ridge waveguide principle. A second embodiment provides wave guidance at the outside edges of the outer ridges by a buried heterostructure principle.

Abstract: An array of coupled waveguides in the form of MCRW laser diodes and/or passive waveguides are coupled to one another by optical waves of the TM-mode occurring in semiconductor regions between the waveguides that have a reduced thickness d, the neighboring waveguides being provided at a spacing a.

Abstract: A method for integrating a DFB laser and a passive strip waveguide on a substrate. A layer stack is produced in a first epitaxy step, the layer stack having a laser-active layer and a surface-wide grating on the uppermost layer, and eroding the stack area-wise, but only down to a layer under the laser-active layer, not down to the substrate, by means of etching to create a step separating the laser region from the passive strip waveguide region. By employing an etching stop layer, the etching can ensue self-adjustingly, and the coupling between the laser-active layer and the passive strip waveguide region occurs not by end coupling, but by surface coupling. Only two epitaxy steps are required for the complete manufacture of the structure, and a strip required for the definition of the laser and of the waveguide can be produced in the same single method step.